Patents by Inventor Yoshiro Hirose

Yoshiro Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170018419
    Abstract: A method of manufacturing: a semiconductor device includes fanning an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.
    Type: Application
    Filed: March 13, 2014
    Publication date: January 19, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuro USHIDA, Tsukasa KAMAKURA, Yoshiro HIROSE, Kimihiko NAKATANI
  • Patent number: 9548198
    Abstract: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: January 17, 2017
    Assignees: HITACHI KOKUSAI ELECTRIC INC., L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Yoshiro Hirose, Norikazu Mizuno, Kazutaka Yanagita, Shingo Okubo
  • Publication number: 20170011908
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber, removing the precursor from the process chamber, supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate, removing the first reactant from the process chamber, supplying a second reactant containing oxygen to the substrate, and removing the second reactant from the process chamber. A time period of the act of removing the precursor is set to be longer than a time period of the act of removing the first reactant, or a time period of the act of removing the second reactant is set to be longer than the time period of the act of removing the first reactant.
    Type: Application
    Filed: July 7, 2016
    Publication date: January 12, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuru MATSUOKA, Yoshiro HIROSE, Yoshitomo HASHIMOTO
  • Patent number: 9524867
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: December 20, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji Yamamoto, Yoshiro Hirose, Satoshi Shimamoto
  • Publication number: 20160365246
    Abstract: A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.
    Type: Application
    Filed: June 7, 2016
    Publication date: December 15, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji YAMAMOTO, Yoshiro HIROSE
  • Publication number: 20160365243
    Abstract: A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing the three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.
    Type: Application
    Filed: August 26, 2016
    Publication date: December 15, 2016
    Inventors: Yoshiro HIROSE, Atsushi SANO, Yugo Orihashi, Yoshitomo HASHIMOTO, Satoshi SHIMAMOTO
  • Patent number: 9520282
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: December 13, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Katsuyoshi Harada, Yoshiro Hirose, Tsukasa Kamakura, Atsushi Sano, Yugo Orihashi
  • Publication number: 20160358767
    Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non- simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.
    Type: Application
    Filed: June 1, 2016
    Publication date: December 8, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi NITTA, Satoshi SHIMAMOTO, Yoshiro HIROSE
  • Patent number: 9508543
    Abstract: A thin film having a low dielectric constant and a high resistance to HF at a low temperature range is formed with high productivity. A film containing a predetermined element, oxygen and at least one of carbon and nitrogen is formed on a substrate by performing, a predetermined number of times, a cycle comprising: (a) supplying a source gas containing the predetermined element to the substrate; and (b) supplying a reaction gas containing nitrogen, carbon and oxygen to the substrate.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: November 29, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yugo Orihashi, Yoshiro Hirose
  • Publication number: 20160329208
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Application
    Filed: July 22, 2016
    Publication date: November 10, 2016
    Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
  • Patent number: 9487861
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: November 8, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Publication number: 20160322212
    Abstract: A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.
    Type: Application
    Filed: March 30, 2016
    Publication date: November 3, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tsukasa KAMAKURA, Takaaki NODA, Yoshiro HIROSE
  • Patent number: 9478417
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: October 25, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yushin Takasawa, Hajime Karasawa, Yoshiro Hirose
  • Patent number: 9478413
    Abstract: A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: October 25, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Satoshi Shimamoto, Yoshiro Hirose, Atsushi Sano
  • Patent number: 9472397
    Abstract: A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: October 18, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Atsushi Sano, Katsuyoshi Harada
  • Patent number: 9472391
    Abstract: A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: October 18, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Satoshi Shimamoto, Yoshiro Hirose, Atsushi Sano, Tsukasa Kamakura, Takaaki Noda
  • Publication number: 20160298236
    Abstract: Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
    Type: Application
    Filed: June 15, 2016
    Publication date: October 13, 2016
    Inventors: Yushin TAKASAWA, Hajime KARASAWA, Yoshiro HIROSE
  • Patent number: 9460914
    Abstract: A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
    Type: Grant
    Filed: September 16, 2015
    Date of Patent: October 4, 2016
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Katsuyoshi Harada, Yoshiro Hirose, Atsushi Sano
  • Patent number: 9460916
    Abstract: An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and (a-2) supplying a reaction gas composed of carbon, nitrogen, and hydrogen to the substrate in the process container; and (b) modifying byproduct adhered to an inside of the process container by supplying a nitriding gas into the process container after (a).
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: October 4, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Satoshi Shimamoto, Yugo Orihashi, Yoshitomo Hashimoto, Yoshiro Hirose
  • Patent number: 9460911
    Abstract: A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.
    Type: Grant
    Filed: May 7, 2015
    Date of Patent: October 4, 2016
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yoshiro Hirose, Atsushi Sano, Yugo Orihashi, Yoshitomo Hashimoto, Satoshi Shimamoto