Patents by Inventor Yoshiro Hirose

Yoshiro Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170162386
    Abstract: A method of manufacturing a semiconductor device includes: forming a base film containing a first element and carbon on a substrate by supplying a film forming gas to the substrate; and oxidizing the base film by supplying an oxidizing gas to the substrate to modify the base film into a C-free oxide film containing the first element.
    Type: Application
    Filed: February 17, 2017
    Publication date: June 8, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE
  • Patent number: 9673043
    Abstract: There is provided a technique including: (a) forming a thin film containing a predetermined element, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element, carbon and a halogen element having a chemical bond between the predetermined element and carbon to the substrate; (a-2) supplying an oxidizing gas to the substrate; and (a-3) supplying a catalytic gas to the substrate; (b) removing a first impurity from the thin film by thermally processing the thin film at a first temperature higher than a temperature of the substrate in (a); and (c) removing a second impurity different from the first impurity from the thin film by thermally processing the thin film at a second temperature equal to or higher than the first temperature after performing (b).
    Type: Grant
    Filed: March 30, 2016
    Date of Patent: June 6, 2017
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takaaki Noda, Shingo Nohara, Satoshi Shimamoto, Hiroshi Ashihara, Takeo Hanashima, Yoshiro Hirose, Tsukasa Kamakura
  • Patent number: 9640387
    Abstract: A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: May 2, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji Yamamoto, Tsukasa Kamakura, Yoshiro Hirose, Satoshi Shimamoto
  • Publication number: 20170117133
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
    Type: Application
    Filed: November 9, 2016
    Publication date: April 27, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji YAMAMOTO, Yoshiro HIROSE, Satoshi SHIMAMOTO
  • Publication number: 20170103885
    Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
    Type: Application
    Filed: December 21, 2016
    Publication date: April 13, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshinobu NAKAMURA, Kiyohiko MAEDA, Yoshiro HIROSE, Ryota HORIIKE, Yoshitomo HASHIMOTO
  • Patent number: 9620357
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: April 11, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Shingo Nohara, Ryota Sasajima, Katsuyoshi Harada, Yuji Urano
  • Patent number: 9613798
    Abstract: A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: April 4, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji Yamamoto, Yoshiro Hirose, Satoshi Shimamoto
  • Publication number: 20170092486
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate; and forming a film on the substrate by supplying a silicon hydride and a halogen element-free catalyst containing one of a group III element or a group V element to the substrate, under a condition that the silicon hydride is not thermally decomposed when the silicon hydride is present alone.
    Type: Application
    Filed: September 23, 2016
    Publication date: March 30, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi NITTA, Satoshi SHIMAMOTO, Yoshiro HIROSE
  • Patent number: 9607827
    Abstract: A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: March 28, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Atsushi Sano, Katsuyoshi Harada
  • Patent number: 9583338
    Abstract: According to the present disclosure, a film containing a predetermined element, carbon and nitrogen is formed with high controllability of a composition thereof. A method of manufacturing a semiconductor device includes forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first processing gas containing the predetermined element and a halogen element to the substrate, supplying a second processing gas composed of three elements of carbon, nitrogen and hydrogen to the substrate, and supplying a third processing gas containing carbon to the substrate.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: February 28, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo Hashimoto, Yoshiro Hirose, Tatsuru Matsuoka
  • Publication number: 20170040157
    Abstract: A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant.
    Type: Application
    Filed: July 29, 2016
    Publication date: February 9, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Tatsuru MATSUOKA
  • Publication number: 20170025271
    Abstract: A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.
    Type: Application
    Filed: July 22, 2016
    Publication date: January 26, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshitomo HASHIMOTO, Yoshiro HIROSE, Shingo NOHARA, Ryota SASAJIMA, Katsuyoshi HARADA, Yuji URANO
  • Publication number: 20170018419
    Abstract: A method of manufacturing: a semiconductor device includes fanning an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.
    Type: Application
    Filed: March 13, 2014
    Publication date: January 19, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takuro USHIDA, Tsukasa KAMAKURA, Yoshiro HIROSE, Kimihiko NAKATANI
  • Patent number: 9548198
    Abstract: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: January 17, 2017
    Assignees: HITACHI KOKUSAI ELECTRIC INC., L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Yoshiro Hirose, Norikazu Mizuno, Kazutaka Yanagita, Shingo Okubo
  • Publication number: 20170011908
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor containing a predetermined element to the substrate in a process chamber, removing the precursor from the process chamber, supplying a first reactant containing nitrogen, carbon and hydrogen to the substrate, removing the first reactant from the process chamber, supplying a second reactant containing oxygen to the substrate, and removing the second reactant from the process chamber. A time period of the act of removing the precursor is set to be longer than a time period of the act of removing the first reactant, or a time period of the act of removing the second reactant is set to be longer than the time period of the act of removing the first reactant.
    Type: Application
    Filed: July 7, 2016
    Publication date: January 12, 2017
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Tatsuru MATSUOKA, Yoshiro HIROSE, Yoshitomo HASHIMOTO
  • Patent number: 9524867
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. At least in a specific cycle, the respective gases are supplied and confined in the process chamber while closing the exhaust system in at least one of the act of forming the first layer and the act of forming the second layer.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: December 20, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji Yamamoto, Yoshiro Hirose, Satoshi Shimamoto
  • Publication number: 20160365243
    Abstract: A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing the three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.
    Type: Application
    Filed: August 26, 2016
    Publication date: December 15, 2016
    Inventors: Yoshiro HIROSE, Atsushi SANO, Yugo Orihashi, Yoshitomo HASHIMOTO, Satoshi SHIMAMOTO
  • Publication number: 20160365246
    Abstract: A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.
    Type: Application
    Filed: June 7, 2016
    Publication date: December 15, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Ryuji YAMAMOTO, Yoshiro HIROSE
  • Patent number: 9520282
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: December 13, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Katsuyoshi Harada, Yoshiro Hirose, Tsukasa Kamakura, Atsushi Sano, Yugo Orihashi
  • Publication number: 20160358767
    Abstract: There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non- simultaneously performing forming a first layer by supplying a precursor containing hydrogen and an halogen element to the substrate in a process chamber, under a condition in which the precursor is pyrolyzed if the precursor exists alone and under a condition in which a flow rate of the precursor supplied into the process chamber is larger than a flow rate of the precursor exhausted from an interior of the process chamber and forming a second layer by supplying a reactant to the substrate in the process chamber thereby modifying the first layer.
    Type: Application
    Filed: June 1, 2016
    Publication date: December 8, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takafumi NITTA, Satoshi SHIMAMOTO, Yoshiro HIROSE