Abstract: A turbocharger system includes: a high-pressure stage turbocharger including a high-pressure stage turbine disposed on an exhaust passage and driven by exhaust, and a high-pressure stage compressor disposed on an intake passage and driven by a rotational torque of the high-pressure stage turbine; and a low-pressure stage turbocharger including a low-pressure stage turbine disposed on the exhaust passage of a more downstream side than the high-pressure stage turbine and driven by exhaust, and a low-pressure stage compressor disposed on the intake passage of a more upstream side than the high-pressure stage compressor and driven by a rotational torque of the low-pressure stage turbine, wherein the high-pressure stage turbocharger includes an electric motor that assists a drive force of the high-pressure stage compressor.

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell. A oxide sintered body includes an indium oxide and a cerium oxide, and one or more oxide of titanium, zirconium, hafnium, molybdenum and tungsten. The cerium content is 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce+M), the M element content is equal to or lower than 1% by atom, as an atomicity ratio of M/(In+Ce+M), and the total content of cerium and the M element is equal to or lower than 9% by atom, as an atomicity ratio of (Ce+M)/(In+Ce+M). The oxide sintered body has an In2O3 phase of a bixbyite structure has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 ?m.

Abstract: A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 ?m, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.

Abstract: Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which CompS/CompA=0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 ?m from a surface of the sintered body is represented by a Ce/In atomic ratio (CompS), and an average value of the content of cerium in the entire sintered body is represented by a Ce/In atomic ratio (CompA).

Abstract: Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

Abstract: A seal system for a reciprocating cylinder includes a buffer seal, a rod seal, and a wiper seal. The buffer seal includes a dynamic seal lip and a static lip extending from a hinge portion. The hinge portion of the static lip allows fluid to escape past the outer diameter of the seal when the rod is retracted thereby releasing any pressure build-up between the rod seal and buffer seal. The axial face portion of the dynamic seal lip includes axially extending notches therein. The notches prevent the buffer seal from sticking to the axial wall of the groove and provide a consistent path for the fluid to energize the annular groove between the static and dynamic lips during the extension phase which is necessary for the function of the seal. The back-up ring is an integrated part of the buffer seal, used to provide superior extrusion resistance.

Abstract: To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Abstract: A target for sputtering or a tablet for ion plating, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same are provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a ?-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 25% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract: Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

Abstract: To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Abstract: An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Abstract: Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

Abstract: A new transparent conductive laminated thin film is provided which not only has a high transmittance of light in the visible region and a low surface resistance (6-500?/?), but also combines high transmittances of light in the visible region of short wavelengths of 380-400 nm and the near-ultraviolet region of shorter wavelengths of 300-380 nm. The transparent conductive film has a lamination structure that the surfaces of the metallic thin film 11 are coated with the transparent oxide thin films 10 and 12. Each of the transparent oxide thin film 10 and 12 is an amorphous oxide thin film chiefly composed of gallium, indium, and oxygen or composed of gallium and oxygen, and the gallium content of each transparent oxide thin film ranges from 35 at. % to 100 at. % with respect to all metallic atoms.

Abstract: A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate, and a member for position detection comprising at least a wiring portion for position detection along with a electrodes for position detection is arranged at said substrate frame portion, characterized in that the transparent conductive film is composed of an oxide having indium oxide as a main component and containing gallium and tin; and this is provided by a method for producing a capacitive touch panel, characterized in that after forming an amorphous transparent conductive film composed of an oxide having indium oxide as a main component and containing gallium and tin onto the transparent substrate or the like.

Abstract: Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Abstract: A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal (100) and a second dust seal (200) which is arranged at a location nearer to an atmospheric air side than the first dust seal (100), wherein each of the first dust seal (100) and the second dust seal (200) has a seal lip formed so as to be slidable with respect to an outer peripheral surface of the shaft. The first dust seal (100) has seal lips (121, 122) made of urethane rubber, and the second dust seal (200) has only a single seal lip (221) which is made of a rubber higher in flexibility than urethane rubber, and which extends toward the atmospheric air side.

Abstract: A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption.

Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.

Abstract: A sealing device in which a good lubricating oil film is formed along the entire circumference of a sliding surface. The sealing device (1) is fitted in an annular groove formed in either of two elements that are a housing having a shaft hole and a shaft inserted through the shaft hole, and the sealing device (1) seals an annular gap between the two elements. The sealing device (1) has a seal ring (2) sliding against the other element by relative axial movements of the two elements. In the seal ring (2), on each of axially opposite ends of a sliding surface (20) sliding against the other element, there are formed grooves (22) extending from an end surface (21) of the seal ring (2) toward the axial center of a sliding surface (20).

Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.