Abstract: A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption.

Abstract: There is provided a sealing system with improved durability. In a sealing system in which a dust seal includes a first dust seal 100 and a second dust seal 200 provided on an atmosphere side of the first dust seal 100 and each of the first dust seal 100 and the second dust seal 200 has (a) seal lip(s) for sliding on an outer peripheral face of the shaft, the seal lips 121 and 122 of the first dust seal 100 are made of polyurethane rubber and the seal lip 221 of the second dust seal 200 is made of rubber having higher flexibility than the polyurethane rubber and is only the seal lip 221 extending toward the atmosphere side.

Abstract: A sealing device in which a good lubricating oil film is formed along the entire circumference of a sliding surface. The sealing device (1) is fitted in an annular groove formed in either of two elements that are a housing having a shaft hole and a shaft inserted through the shaft hole, and the sealing device (1) seals an annular gap between the two elements. The sealing device (1) has a seal ring (2) sliding against the other element by relative axial movements of the two elements. In the seal ring (2), on each of axially opposite ends of a sliding surface (20) sliding against the other element, there are formed grooves (22) extending from an end surface (21) of the seal ring (2) toward the axial center of a sliding surface (20).

Abstract: Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which CompS/CompA=0.9 to 1.1, where the content of cerium in a surface layer to a depth of 5 ?m from a surface of the sintered body is represented by a Ce/In atomic ratio (CompS), and an average value of the content of cerium in the entire sintered body is represented by a Ce/In atomic ratio (CompA).

Abstract: Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Abstract: The hydraulic cylinder having a portion on a side of a lip tip end of an annular clearance between an inner circumferential face of a shaft hole of a cylinder and a piston is made up of a minute clearance in order to suppress protrusion of the lip, wherein an annular clearance area for suppressing occurrence of the cavitation and for shortening an axial distance of the annular clearance portion made up of the minute clearance is formed on an opposite side of the annular clearance portion from a mounting groove.

Abstract: A sealing device (1) having: a slide ring (2) and a back ring (3). The sealing device (1) is configured to seal an annular gap between a housing having a shaft hole, and a shaft inserted through the shaft hole. The slide ring (2) has: a through-cut (22), comprising a circumferential cut (22A), and axial cuts (22B) extending from both ends of the circumferential cut, along the axial direction; and multiple parting lines (23A, 23B) formed on a surface of the slide ring (2). The parting lines (23A, 23B) are arranged so that the parting lines (23A, 23B) are not overlapped with the circumferential cut (22A) exposed at the junction surface of the slide ring (2) with the back ring (3), throughout the lengthwise direction of the circumferential cut.

Abstract: A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips.

Abstract: Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Abstract: A target for sputtering which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A oxide sintered body comprising an indium oxide and a cerium oxide, and further comprising, as an oxide, one or more kinds of an metal element (M element) selected from the metal element group consisting of titanium, zirconium, hafnium, molybdenum and tungsten, wherein the cerium content is 0.

Abstract: A tablet for ion plating which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body comprising indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), characterized in that said oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 ?m, as a second phase; and the oxide sintered body is produced by mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.

Abstract: A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption.

Abstract: The present invention provides a surface treatment method for suppressing the formation and growth of superheated steam oxide scale on an iron-based metal surface exposed to superheated steam, comprising treating said iron-based metal surface with a surface-treatment agent which comprises a polyoxy saturated aliphatic mono- or di-carboxylic acid or a salt thereof and an amine compound represented by the following formula (I): Z(CH2CH2NH)nCH2CH2NH2??(I) wherein Z represents H or OH or NH2 group, and n is an integer of 0-5.

Abstract: An ebullient cooling device having a simple structure and capable of limiting the bubbles to an appropriate volume. The ebullient cooling device for cooling a heat generating element is provided with a plurality of vertically arranged cooling channels comprising a lower channel (2), a middle channel (3) and un upper channel (4). Each cooling channel has cooling fins (12) for guiding a refrigerant to flow in a vertical direction, and a vapor discharge path (16) formed at the side of the cooling fins (12) that is opposite the side in contact with the heat generating element. Furthermore, flow path partition/vapor discharge guiding plates (18) are provided between the cooling channels so that the bubbles that have been generated are guided to the vapor discharge path (16) and prevented from moving into the subsequent cooling channel.

Abstract: A hydraulic cylinder includes a cylinder having a shaft hole, a piston inserted into the shaft hole so as to have clearance with respect to an inner circumferential surface of the shaft hole, and seal members arranged in annular grooves formed in an inner circumference of the shaft hole to seal an annular gap between the inner circumference of the shaft hole and the piston, wherein in the hydraulic cylinder in which cavitation could occur in a portion of the clearance accompanying motion of the piston, an expansion part obtained by expanding a portion of a sidewall surface of the annular grooves on an inner circumferential edge side outward from an arrangement area of the seal members is provided to make a distance from a location where cavitation occurs to the seal members longer by a space formed by the expansion part.

Abstract: A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption.

Abstract: To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Abstract: A transparent conductive film, useful in producing a highly efficient silicon-based thin film solar cell, superior in hydrogen reduction resistance and superior in optical confinement effect; a transparent conductive film laminated body using the same; a production method therefor; and a silicon-based thin film solar cell using this transparent conductive film or the transparent conductive film laminated body, as an electrode. It is provided by a transparent conductive film or the like, characterized by containing zinc oxide as a major component and at least one or more kinds of added metal elements selected from aluminum and gallium, whose content being within a range shown by the following expression (1), and having a surface roughness (Ra) of equal to or larger than 35.0 nm, and a surface resistance of equal to or lower than 65 ?/? —[Al]+0.30?[Ga]??2.68×[Al]+1.

Abstract: To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Abstract: The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.