Abstract: A sealing device is provided which is capable of reducing its sliding resistance. In a sealing device 1 which is fitted into an annular groove formed in one of a housing with a shaft hole and a shaft inserted into said shaft hole and serves to seal an annular gap between these two members, and which includes a seal ring 2 made of a resin that is in sliding contact with the other of the two members, and an elastic ring 3 that is fitted between the seal ring 2 and the annular groove, the seal ring has a plurality of concave portions 22 formed on its sliding surface 20 which is in sliding contact with the other member.

Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips.

Abstract: A heat resistant black coating film which is capable of making the surface of optical members to be low reflection property and black property, a black light shading plate having a resin film using the same as a base substrate, and a diaphragm, a diaphragm device for light intensity adjustment and a shutter using the same, and heat resistant light shading tape. They are provided by a black coating film (A), where a titanium oxide film containing titanium and oxygen as main components, and having an oxygen content of from 0.7 to 1.

Abstract: A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal (100) and a second dust seal (200) which is arranged at a location nearer to an atmospheric air side than the first dust seal (100), wherein each of the first dust seal (100) and the second dust seal (200) has a seal lip formed so as to be slidable with respect to an outer peripheral surface of the shaft. The first dust seal (100) has seal lips (121, 122) made of urethane rubber, and the second dust seal (200) has only a single seal lip (221) which is made of a rubber higher in flexibility than urethane rubber, and which extends toward the atmospheric air side.

Abstract: An engine system capable of immediately restarting an engine upon detecting a driver's reaccelerating operation while an engine speed is decreased by idle-stop control. The system includes an idle-stop control unit which performs the idle-stop control of stopping fuel injection to the engine when the engine idly rotates upon stopping the vehicle by connecting an electric assist turbocharger obtained by the combination of a turbocharger and a motor to an intake and exhaust system of the engine. The idle-stop control unit is configured to restart the engine by resuming the fuel injection to the engine while operating a motor upon detecting the reaccelerating operation during the idle-stop control.

Abstract: A turbocharger system for achieving both improvement of fuel efficiency by engine downsizing and excellent shock loading resistance. The system includes: a power-assisted turbocharger mounted on a vehicle having an accessory and including a turbine disposed on an exhaust passage of an engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the accessory is being driven.

Abstract: A turbocharger system for simultaneously improving a fuel efficiency and obtaining a satisfactory hill start performance due to a downsized engine. The system includes an electric assist turbocharger which includes a turbine disposed in an exhaust passage of an engine and driven by exhaust gas, a compressor disposed in an intake passage and driven by a rotational torque of the turbine, and an electric motor assisting a driving force of the compressor and an electric motor control unit which drives the electric motor when detecting a start operation at a sloping road.

Abstract: An engine system for ensuring a sufficient boost pressure during engine braking and improving a braking force of a compression release brake. The system includes: a compression release brake device that operates a compression release brake to obtain a braking force during engine braking by forcibly opening an exhaust valve and releasing a compressive pressure near a compression top dead center of an engine; a power-assisted turbocharger including a turbine disposed on an exhaust passage of the engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the compressor release brake is operated.

Abstract: A turbocharger system includes: a high-pressure stage turbocharger including a high-pressure stage turbine disposed on an exhaust passage and driven by exhaust, and a high-pressure stage compressor disposed on an intake passage and driven by a rotational torque of the high-pressure stage turbine; and a low-pressure stage turbocharger including a low-pressure stage turbine disposed on the exhaust passage of a more downstream side than the high-pressure stage turbine and driven by exhaust, and a low-pressure stage compressor disposed on the intake passage of a more upstream side than the high-pressure stage compressor and driven by a rotational torque of the low-pressure stage turbine, wherein the high-pressure stage turbocharger includes an electric motor that assists a drive force of the high-pressure stage compressor.

Abstract: A turbocharger system for ensuring a sufficient exhaust gas recirculation (“EGR”) amount in all operating conditions, and reducing NOx emission from an engine. The system includes an EGR controller that re-circulates a part of exhaust gas discharged from the engine to an intake side. The turbocharger is a power-assisted turbocharger including an electric motor that assists a drive force of a compressor. The EGR controller controls an amount of exhaust gas recirculated to the intake side so as to inhibit the generation of NOx regardless of an amount of oxygen necessary for combustion of the engine. An electric motor control unit drives the electric motor, by the control of the EGR controller, when the amount of oxygen necessary for the combustion of the engine is deficient.

Abstract: A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal and a second dust seal which is arranged at a location nearer to an atmospheric air side than the first dust seal, wherein each of the first dust seal and the second dust seal has a seal lip formed so as to be slidable with respect to an outer peripheral surface of the shaft. The first dust seal has seal lips made of urethane rubber, and the second dust seal has only a single seal lip which is made of a rubber higher in flexibility than urethane rubber, and which extends toward the atmospheric air side.

Abstract: A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by ?2.18×[Al]+1.74?[Ga]??1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by ?[Al]+0.30?[Ga]??2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga).

Abstract: A sealing device (1) having: a slide ring (2) and a back ring (3). The sealing device (1) is configured to seal an annular gap between a housing having a shaft hole, and a shaft inserted through the shaft hole. The slide ring (2) has: a through-cut (22), comprising a circumferential cut (22A), and axial cuts (22B) extending from both ends of the circumferential cut, along the axial direction; and multiple parting lines (23A, 23B) formed on a surface of the slide ring (2). The parting lines (23A, 23B) are arranged so that the parting lines (23A, 23B) are not overlapped with the circumferential cut (22A) exposed at the junction surface of the slide ring (2) with the back ring (3), throughout the lengthwise direction of the circumferential cut.

Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GalnO3 phase of a ?-Ga2O3-type structure, or GalnO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract: An oxide sintered body having zinc oxide as a main component and containing magnesium, and a transparent conductive substrate are provided, and an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Abstract: In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line.

Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation and subsequently compacting by charging the granule into a mold followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: An oxide evaporation material in the present invention comprises a sintered body containing indium oxide as a main component thereof and cerium with the Ce/In atomic ratio of more than 0.110 and equal to or less than 0.538, and has an L* value of 62 to 95 in the CIE 1976 color space. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film-formation vacuum chamber, a high-refractive-index transparent film having a refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small.