Abstract: An electronic control device includes: a first input-output terminal and a second input-output terminal through which differential signals are input and output; a transceiver integrated circuit (IC) that transmits and receives the differential signals; a first line that connects the first input-output terminal and the transceiver IC; and a second line that connects the second input-output terminal and the transceiver IC. A first capacitance that is a capacitance between the first line and a ground is at least 80 pF and at most 220 pF, and a second capacitance that is a capacitance between the second line and the ground is at least 80 pF and at most 220 pF.

Abstract: A machine tool machining dimensions prediction device (100) includes: a data collector (10) to acquire driving state information of a machine tool; a feature amount extractor (211) to extract a feature amount from the driving state information; a data analyzer (311) to analyze the extracted feature amount; and a machining quality prediction model generator (312) to generate, from the analyzed information, a prediction model of a machining dimension of a workpiece. The machine tool machining dimensions prediction device (100) applies the feature amount and the driving state information to the prediction model during machining of the workpiece to predict a machining quality and refers to a machining dimension quality regulation to determine whether the machining quality satisfies a standard.

Abstract: A machine tool machining dimensions prediction device (100) includes: a data collector (10) to acquire driving state information of a machine tool; a feature amount extractor (211) to extract a feature amount from the driving state information; a data analyzer (311) to analyze the extracted feature amount; and a machining quality prediction model generator (312) to generate, from the analyzed information, a prediction model of a machining dimension of a workpiece. The machine tool machining dimensions prediction device (100) applies the feature amount and the driving state information to the prediction model during machining of the workpiece to predict a machining quality and refers to a machining dimension quality regulation to determine whether the machining quality satisfies a standard.

Abstract: If the capacitance of a snubber capacitor, the inductance of a coil and the magnitude of a resistor are specified such that the resonance frequency of the snubber circuit coincides with the ringing frequency of the transistor, and the impedance of the first loop at the resonance frequency becomes smaller than the impedance of the second loop at the resonance frequency, a current component due to ringing flows in the snubber circuit, and energy is consumed by the resistor. Therefore, it is possible to quickly converge ringing.

Abstract: A vehicle includes a power receiving portion that contactlessly receives electric power from a power transmitting portion provided outside the vehicle and includes a shield member that is arranged around the power receiving portion in the same plane as a plane in which the power receiving portion is arranged, wherein the shield member includes a first shield region having a high shielding function and a second shield region having a shielding function lower than that of the first shield region at a position around the power receiving portion.

Abstract: If the capacitance of a snubber capacitor, the inductance of a coil and the magnitude of a resistor are specified such that the resonance frequency of the snubber circuit coincides with the ringing frequency of the transistor, and the impedance of the first loop at the resonance frequency becomes smaller than the impedance of the second loop at the resonance frequency, a current component due to ringing flows in the snubber circuit, and energy is consumed by the resistor. Therefore, it is possible to quickly converge ringing.

Abstract: In an electronic component mounting method, electronic components are picked up from a component supply unit in which two tray supply mechanisms are arranged, and mounted on substrates. In the method, both of the tray supply mechanisms are allowed to hold trays storing therein the electronic components to be mounted on the substrates. If shortage of the components occurs in one tray supply mechanism during a component mounting process, a target for picking up the electronic components is switched to the other tray supply mechanism. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A task is to provide an electromagnetic coil device capable of decreasing a surge voltage generated in an electromagnetic coil without providing a surge voltage decreasing diode. Provided are an electromagnetic coil in which a coil wire is wound; a first electric conductor installed around the electromagnetic coil, the first electric conductor being electrically insulated from the electromagnetic coil; and a second electric conductor installed in the first electric conductor or installed between the first electric conductor and the electromagnetic coil, the second electric conductor being electrically insulated from the electromagnetic coil, and being installed in such a manner as to have an eddy current flowing therethrough when a current flowing through the electromagnetic coil changes.

Abstract: In an electronic component mounting method, electronic components are picked up from a component supply unit in which first and second tray supply mechanisms are arranged, and mounted on substrates. In the method, a first substrate and a second substrate different in type from the first substrate are transported by first and second substrate transport lanes, respectively, and a first component to be mounted on the first substrate and a second component to be mounted on the second substrate are supplied by the first and second tray supply mechanisms, respectively. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A power transmitting device includes a power transmitting portion that contactlessly transmits electric power to a power receiving portion. The power transmitting portion has a resonance coil (24) and a tubular member (240) that faces the resonance coil (24). At least one portion of the tubular member (240) is electrically cut off.

Abstract: A vehicle includes a power receiving portion that contactlessly receives electric power from a power transmitting portion provided outside the vehicle and includes a shield member that is arranged around the power receiving portion in the same plane as a plane in which the power receiving portion is arranged, wherein the shield member includes a first shield region having a high shielding function and a second shield region having a shielding function lower than that of the first shield region at a position around the power receiving portion.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: In an electronic component mounting method, electronic components are picked up from a component supply unit in which two tray supply mechanisms are arranged, and mounted on substrates. In the method, both of the tray supply mechanisms are allowed to hold trays storing therein the electronic components to be mounted on the substrates. If shortage of the components occurs in one tray supply mechanism during a component mounting process, a target for picking up the electronic components is switched to the other tray supply mechanism. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism.

Abstract: In an electronic component mounting method, electronic components are picked up from a component supply unit in which first and second tray supply mechanisms are arranged, and mounted on substrates. In the method, a first substrate and a second substrate different in type from the first substrate are transported by first and second substrate transport lanes, respectively, and a first component to be mounted on the first substrate and a second component to be mounted on the second substrate are supplied by the first and second tray supply mechanisms, respectively. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.