Abstract: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Abstract: A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.

Abstract: A semiconductor device manufacturing method comprises forming a pn column so that the pn column is designed to have a strip form in the section of the substrate and have a repetitive pattern of a p-conduction type and an n-conduction type on the substrate surface over an area where plural semiconductor devices having the same structure are formed in a semiconductor substrate, forming residual constituent elements of the plural semiconductor devices having the same structure in areas where the repetitive patterns are located while the pn column serves as a part of the constituent element of each semiconductor device, and dicing the individual semiconductor devices into chips from the area where the plural semiconductor devices having the same structure are formed.

Abstract: An apparatus has a holder that receives a component from a component supply and then places the component on a substrate. In operation, it is determined whether the holder would make an interference with another component already mounted on the substrate. If this judgement is affirmative, mounting of the component held by the holder is prohibited. If, on the other hand, this judgement is negative, the component held by the holder is mounted onto the substrate.

Abstract: A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

Abstract: A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 ?m. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27° C. and at 150° C. is smaller than 1.8.

Abstract: From a collision load, a one-time integration value and a two-time integration value are computed. The one-time integration value and two-time integration value are then used for obtaining a mass and rigidity of a collision object as two primary parameters. The obtained two primary parameters are used for determining whether or not the collision object is a pedestrian. This achieves accuracy in determining the collision object that is remarkably superior to a conventional method that uses a collision load waveform.

Abstract: A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.

Abstract: An apparatus has a holder that receives a component from a component supply and then places the component on a substrate. In operation, it is determined whether the holder would make an interference with another component already mounted on the substrate. If this judgement is affirmative, mounting of the component held by the holder is prohibited. If, on the other hand, this judgement is negative, the component held by the holder is mounted onto the substrate.

Abstract: An impact sensor includes the first and the second electrodes arranged a predetermined distance away from each other in a tube insulator. The impact sensor is arranged at a front of a vehicle such that the first and the second electrodes opposed to each other in the front-to-rear direction of the vehicle. The first and the second electrodes include cable conductors sheathed with elastically deformable conductive members, respectively. The first and the second electrodes are apart from each other when no impact is applied to the impact sensor. When a collision occurs and the impact is applied to the impact sensor, a contact area between the conductive members increases and a resistance between the first and the second electrodes continuously decreases.

Abstract: A pedestrian determining system mounted on a vehicle determines a collision object for protecting a pedestrian. An impedance sensor is included for detecting an alternating-current impedance or an electricity quantity being a function value of the alternating-current impedance to thereby output the detected one as an impedance signal, wherein the alternating-current impedance is varied by approaching of the collision object. A collision load sensor is included for detecting a collision load when the collision object collides with the vehicle to output the detected collision load as a collision load signal. Whether the collision object is a pedestrian or not is determined based on a value of a given function including as input variables the impedance signal outputted from the impedance sensor and the collision load signal outputted from the collision load sensor.

Abstract: A service receiving device is provided for in a production facility such as a component mounting apparatus. A service providing device is provided for on a manufacturer's side of the production facility. The service receiving device and service providing device are configured to communicate with each other through various communication systems including, for example, the Internet. The communication system can be operated by software to create and/or transmit service responses to problems or production matters, including productivity or quality of maintenance.

Abstract: A semiconductor device includes: an n+ type drain region; an n type drift region that connects with the n+ type drain region; a p type body region; a n+ type source region that connects with the p type body region; and a gate electrode that is provided, with being covered by a gate insulation film, in a gate trench that penetrates the p type body region. The semiconductor further includes: a p type silicon region that adjoins the n type drift region; and an n type silicon region provided in a region almost including a carrier passage that connects the n type drift region and the p type body region. Here, the p type silicon region and the p type body region directly connect with each other.

Abstract: A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the peripheral region is greater than that in the active region, which is used as a body region. Therefore, a depletion layer in the peripheral region expands sufficiently in the thickened portion of the second semiconductor layer as well as in the super junction structure. Thus, the avalanche withstanding capability is improved.

Abstract: A method for monitoring a mounting tact of a component mounting apparatus including a component supplier for supplying a component and a component holder for holding the component from the component supplying device and mounting the component onto a circuit board. The method includes collecting and monitoring a mounting tact result value of the component mounting apparatus during a mounting operation via a communication system. The method further includes calculating a tact loss corresponding to an amount by which the mounting tact result value is greater than a standard mounting tact and monitoring the calculated tact loss.

Abstract: A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

Abstract: An NC hole-machining programming device according to this present invention includes: a tool information storing unit for storing tool information including types and sizes of tools used for hole machining; a form recognizing unit for extracting a cylindrical surface and conical surface as a local geometry which constitutes a hole-machining form of target objects based on CAD data; a machining method determining unit which generates a hole-machining-form pattern based on the hole-machining form detected by the form recognizing unit and determine machining methods based on the hole-machining-form patterns; a tool determining unit for selecting a tool in accordance with the machining methods determined by the machining method determining unit with reference to the tool information; a tool path determining unit which determines a tool path for each tool selected by the tool determining unit; and an NC program generating unit which generates a NC programs based on the tool paths determined by the tool path determ

Abstract: A pedestrian collision detecting apparatus for motor vehicles is provided which works to distinguish between impacts with pedestrians and other sorts of impacts using a combination of a collision duration for which a sensor continues to sense a physical impact arising from collision with an object and a time-sequential change in locations of collisions of the vehicle with objects, thereby ensuring the reliability of detection of a pedestrian-vehicle collision and allowing the size and production costs of the apparatus to be minimized to improve the mountability of the apparatus in motor vehicles.

Abstract: A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.

Abstract: The present invention provides a device and a method for determining whether or not component holder is good, which enable detecting component holders that are to affect correct component recognition and further enable preventing interferences between constituent devices, a component mounting apparatus with the determining device, and a component mounting method. The determining device has an illuminating device, a CCD camera and a controller to determine whether or not a suction nozzle is good based on a luminance at a component hold face of the suction nozzle. The suction nozzle having the light reflectance of the component hold face increased to a level whereat the correct recognition of an electronic component held by the suction nozzle is affected can be detected accordingly. An interference preventing device is also provided, so that the interference between the CCD camera and the suction nozzle can be prevented.