Abstract: The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

Abstract: A plurality of resistance-imparting portions (34A to 34E) are disposed adjacent to each other. A first contraction flow portion forming one of the resistance-imparting portions (34A to 34E) adjacent to each other is in communication with an enlarged diameter portion forming another resistance-imparting portion. First contraction flow portions (32AH to 32DH) forming the resistance-imparting portions (34A to 34E) adjacent to each other are disposed at different positions in a direction in which an outer frame member (31) extends.

Abstract: The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

Abstract: Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

Abstract: A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.

Abstract: A plurality of resistance-imparting portions (34A to 34E) are disposed adjacent to each other. A first contraction flow portion forming one of the resistance-imparting portions (34A to 34E) adjacent to each other is in communication with an enlarged diameter portion forming another resistance-imparting portion. First contraction flow portions (32AH to 32DH) forming the resistance-imparting portions (34A to 34E) adjacent to each other are disposed at different positions in a direction in which an outer frame member (31) extends.

Abstract: An evaporator includes: a vessel having a refrigerant inlet for receiving a refrigerant at a lower part of the vessel, and a refrigerant outlet for discharging the refrigerant in an evaporated state at an upper part of the vessel; and a plurality of heat-transfer tubes disposed so as to extend inside the vessel along a longitudinal direction of the vessel, and configured to transfer heat received from a fluid flowing inside the heat-transfer tubes to the refrigerant flowing outside the heat-transfer tubes. The plurality of heat-transfer tubes are disposed so that at least one downward flow passage is defined through the plurality of heat-transfer tubes or around the plurality of heat-transfer tubes, the at least one downward flow passage having a width larger than a representative interval between the plurality of heat-transfer tubes.

Abstract: A semiconductor device is provided with: a substrate; a first region provided above the substrate; a second region provided away from the first region in a first direction; a third region provided between the first region and the second region, the third region facing an electrode portion; a fourth region provided between the first region and the third region; and a fifth region provided between the second region and the third region. The fourth and fifth regions include carbon (C). Carbon concentrations in the first and second regions are lower than carbon concentrations in the fourth and fifth regions.

Abstract: A particle diameter acquisition device includes an intensity distribution acquisition unit configured to acquire an intensity distribution of scattered light scattered from a multi-phase flow including dispersed phase at the time of irradiating the multi-phase flow with irradiation light, an attenuation gradient acquisition unit configured to acquire an attenuation gradient in the intensity distribution on the basis of the intensity distribution of the scattered light, a concentration acquisition unit configured to acquire a concentration of the dispersed phase in the multi-phase flow, a database configured to store intensity distribution data which is an intensity distribution of scattered light for each particle diameter and concentration of a dispersed phase, and a particle diameter acquisition unit configured to acquire a particle diameter of the dispersed phase on the basis of the acquired attenuation gradient, concentration, and intensity distribution data with reference to the intensity distribution da

Abstract: A particle diameter acquisition device includes an intensity distribution acquisition unit configured to acquire an intensity distribution of scattered light scattered from a multi-phase flow including dispersed phase at the time of irradiating the multi-phase flow with irradiation light, an attenuation gradient acquisition unit configured to acquire an attenuation gradient in the intensity distribution on the basis of the intensity distribution of the scattered light, a concentration acquisition unit configured to acquire a concentration of the dispersed phase in the multi-phase flow, a database configured to store intensity distribution data which is an intensity distribution of scattered light for each particle diameter and concentration of a dispersed phase, and a particle diameter acquisition unit configured to acquire a particle diameter of the dispersed phase on the basis of the acquired attenuation gradient, concentration, and intensity distribution data with reference to the intensity distribution da

Abstract: A semiconductor device is provided with: a substrate; a first region provided above the substrate; a second region provided away from the first region in a first direction; a third region provided between the first region and the second region, the third region facing an electrode portion; a fourth region provided between the first region and the third region; and a fifth region provided between the second region and the third region. The fourth and fifth regions include carbon (C). Carbon concentrations in the first and second regions are lower than carbon concentrations in the fourth and fifth regions.

Abstract: This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.

Abstract: A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.

Abstract: There is provided a large-sized reboiler that can achieve space saving and reduction in plant cost. Specifically, there is provided a large-sized reboiler comprising a vessel of which a liquid is supplied from a lower part and a vaporized gas is discharged from an upper part; and a heat transfer tube group arranged in such a manner that a void penetrating in the up-and-down direction is formed in the vessel, wherein a maximum length of a cross-sectional figure of a flow path for the liquid exceeds 2 m, and the void occupies 5 to 10% of an area of the cross-sectional figure of the flow path.

Abstract: An autoclave (1) is one in which a heat application target molded material (W) is retained in shape by a retaining jig (4) which has a cavity (15) therein, and is heat-cured with high temperature gas. The autoclave is provided with: a pressure vessel (2) in the interior of which the molded material (W) is arranged; a high temperature gas supplying device (5) which supplies the high temperature gas to the molded material (W) within the pressure vessel (2); and an auxiliary high temperature gas supplying device (7) which supplies the high temperature gas into the interior of the cavity (15).

Abstract: This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.

Abstract: A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.

Abstract: A thermal head includes a substrate, a heat-generating portion disposed on the substrate, electrodes disposed on the substrate and electrically connected to the heat-generating portion, a driver IC disposed on the substrate and electrically connected to the electrodes, and a covering member covering the driver IC. In plan view, a center line of the driver IC extending in a main scanning direction and a highest position of the covering member are located farther form the heat-generating portion than a center line of the covering member extending in the main scanning direction.