Abstract: In one embodiment, a first main terminal region of a first conductivity type and a second main terminal region of a second conductivity type, which is an opposite conductivity type of the first conductivity type, formed in the semiconductor substrate so as to sandwich a gate electrode, a diffusion layer of the second conductivity type coming in contact with the first and second element isolation insulator films and having an upper surface in a position deeper than lower surfaces of the first and second main terminal regions, a first well region of the first conductivity type formed between the first main terminal region and the diffusion layer, and a second well region of the first conductivity type formed between the second main terminal region and the diffusion layer. The second well region has a impurity concentration higher than that of the first well region.

Abstract: In one embodiment, a semiconductor device includes a substrate including a trench, and a gate electrode disposed at a position adjacent to the trench on the substrate, the gate electrode having a first side surface located on an opposite side of the trench, and a second side surface located on the same side as the trench. The device further includes a first sidewall insulator disposed on the first side surface, and a second sidewall insulator disposed on the second side surface and a side surface of the trench. The device further includes a source region of a first conductivity type disposed in the substrate on the same side as the first sidewall insulator with respect to the first side surface, and a drain region of a second conductivity type disposed in the substrate on the same side as the second sidewall insulator with respect to the second side surface.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A gate electrode is provided on the semiconductor layer via the gate dielectric film. A drain layer of a first conductivity type is provided in a part of the semiconductor layer on a side of a first end of the gate electrode. A source layer of a second conductivity type is provided in a part of the semiconductor layer on a side of a second end of the gate electrode and below the gate electrode. The source layer has a substantially uniform impurity concentration at the part of the semiconductor layer below the gate electrode. Voltages of a same polarity are applied to the gate electrode and the drain layer.

Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate, and first and second transistors of first and second conductivity types on the substrate. The first transistor includes a first gate electrode on the substrate, a first source region of the second conductivity type and a first drain region of the first conductivity type disposed to sandwich the first gate electrode, and a first channel region of the first or second conductivity type disposed between the first source region and the first drain region. The second transistor includes a second gate electrode on the substrate, a second source region of the first conductivity type and a second drain region of the second conductivity type disposed to sandwich the second gate electrode, and a second channel region disposed between the second source region and the second drain region and having the same conductivity type as the first channel region.

Abstract: A semiconductor device includes a semiconductor layer opposing to a bottom surface and a side surface of a gate electrode. An insulation film is provided between the bottom surface of the gate electrode and the semiconductor layer and between the side surface of the gate electrode and the semiconductor layer. A first conduction-type drain layer is provided in the semiconductor layer on a side of an end part of one of the bottom surface and the side surface of the gate electrode. A second conduction-type source layer is provided in the semiconductor layer opposing to the other one of the bottom surface and the side surface of the gate electrode. A second conduction-type extension layer is provided in the semiconductor layer opposing to a corner part between the side surface and the bottom surface of the gate electrode and has a lower impurity concentration than that of the source layer.

Abstract: A semiconductor device according to the present embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A gate electrode is provided on the semiconductor layer via the gate dielectric film. A drain layer of a first conductivity type is provided in a part of the semiconductor layer on a side of a first end of the gate electrode. A source layer of a second conductivity type is provided in a part of the semiconductor layer on a side of a second end of the gate electrode and below the gate electrode. The source layer has a substantially uniform impurity concentration at the part of the semiconductor layer below the gate electrode. Voltages of a same polarity are applied to the gate electrode and the drain layer.

Abstract: A first receiving operation receives specific position information from a first communication. A first determination operation determines whether block position information corresponding to the specific position indicated by the received specific position information is included in first block information stored in a storage device. A setting operation sets a magnification factor of a target block image in response to a case in which it is determined that the block position information corresponding to the specific position is included in the first block information. A processing operation processes the target block image based on the set magnification factor. A display operation displays the processed target block image on the display.

Abstract: There is provided a conference system which performs a remote conference by communicating conference data between a transmission terminal and a reception terminal. The transmission terminal receives input of the conference data including audio data, selects a real time mode of sequentially performing transmission of the input audio data and a package mode of performing transmission of the input audio data for each input of a predetermined unit amount, records the input audio data in the predetermined unit amount to generate audio record data when the package mode is selected, and transmits the input audio data to the reception terminal when the real time mode is selected and transmits the audio record data to the reception terminal when the package mode is selected. The reception terminal outputs the received input audio data preferentially over the received audio record data.

Abstract: A steam generator having a heat transfer tube group formed of a plurality of U-shaped heat transfer tubes; an annular channel formed to cover the circumference of the heat transfer tube group; the annular channel having an opening that communicates with the heat transfer tube group; a water supply unit disposed at an upper portion of the annular channel and supplies water to a descending-side portion; a steam/water separator disposed above the heat transfer tube group; and an air bubble removing member for removing air bubbles provided in the annular channel.

Abstract: In one embodiment, a first main terminal region of a first conductivity type and a second main terminal region of a second conductivity type, which is an opposite conductivity type of the first conductivity type, formed in the semiconductor substrate so as to sandwich a gate electrode, a diffusion layer of the second conductivity type coming in contact with the first and second element isolation insulator films and having an upper surface in a position deeper than lower surfaces of the first and second main terminal regions, a first well region of the first conductivity type formed between the first main terminal region and the diffusion layer, and a second well region of the first conductivity type formed between the second main terminal region and the diffusion layer. The second well region has a impurity concentration higher than that of the first well region.

Abstract: In one embodiment, a semiconductor device includes a substrate, a gate insulator on the substrate, and a gate electrode on the gate insulator. The device further includes a source diffusion layer of a first conductivity type and a drain diffusion layer of a second conductivity type disposed on a surface of the substrate so as to sandwich the gate electrode. The device further includes a junction forming region disposed between the source diffusion layer and the drain diffusion layer so as to contact the source diffusion layer. The junction forming region includes a source extension layer of the first conductivity type, a pocket layer of the second conductivity type above the source extension layer, and a diffusion suppressing layer disposed between the source extension layer and the pocket layer and containing carbon so as to suppress diffusion of impurities between the source extension layer and the pocket layer.

Abstract: In one embodiment, a semiconductor device includes a first diffusion layer of a first conductivity type and a second diffusion layer of a second conductivity type that are provided in a semiconductor layer at a distance, the second conductivity type being an opposite conductivity type of the first conductivity type, a first insulating film and a second insulating film that are provided on the semiconductor layer between the first diffusion layer and the second diffusion layer at a distance, a gate electrode provided on the first insulating film, and a threshold regulating electrode provided on the second insulating film.

Abstract: In one embodiment, a semiconductor device includes a first diffusion layer of a first conductivity type and a second diffusion layer of a second conductivity type that are provided in a semiconductor layer at a distance, the second conductivity type being an opposite conductivity type of the first conductivity type, a first insulating film and a second insulating film that are provided on the semiconductor layer between the first diffusion layer and the second diffusion layer at a distance, a gate electrode provided on the first insulating film, and a threshold regulating electrode provided on the second insulating film.

Abstract: In one embodiment, a semiconductor device includes a first diffusion layer of a first conductive type and a second diffusion layer of a second conductive type which is a reverse conductive type of the first conductive type, the first conductive type first diffusion layer and the second conductive type diffusion layer being spaced apart and provided in a semiconductor layer, a pocket region of the second conductive type which is provided on a surface portion of the semiconductor layer adjacently to the first diffusion layer, and a first extension region of the first conductive type which is provided in the semiconductor layer to cover at least a portion of the pocket region. A second diffusion layer side end portion of the first extension region is positioned closer to a second diffusion layer side than a second diffusion layer side end portion of the pocket region.

Abstract: In a multi-stage steam-water separation device and a steam-water separator, a first swirl vane (6) which causes a gas-liquid two-phase flow to rise while swirling is provided in a first riser (5) of a first steam-water separator (2), and a second swirl vane (12) which causes the gas-liquid two-phase flow which has passed through the first swirl vane (6) to rise while swirling at a speed higher than that provided by the first swirl vane (6), is provided in a second riser (11).

Abstract: In a two-phase flow exciting force evaluation method of the present invention, the surface of one of a plurality of tube bodies (3) is at least partially formed from a conductive material, displacement or stress of the tube body (3) is measured in a state of being vibrated by a shaking device (4), and a void fraction of a two-phase flow (F) flowing in the vicinity of the tube body (3) is measured based on the potential difference between an electric potential at a predetermined position on the surface of the tube body (3), and a reference electric potential.

Abstract: In one embodiment, a semiconductor device includes a substrate, a gate insulator on the substrate, and a gate electrode on the gate insulator. The device further includes a source diffusion layer of a first conductivity type and a drain diffusion layer of a second conductivity type disposed on a surface of the substrate so as to sandwich the gate electrode. The device further includes a junction forming region disposed between the source diffusion layer and the drain diffusion layer so as to contact the source diffusion layer. The junction forming region includes a source extension layer of the first conductivity type, a pocket layer of the second conductivity type above the source extension layer, and a diffusion suppressing layer disposed between the source extension layer and the pocket layer and containing carbon so as to suppress diffusion of impurities between the source extension layer and the pocket layer.

Abstract: There is provided a large-sized reboiler that can achieve space saving and reduction in plant cost. Specifically, there is provided a large-sized reboiler comprising a vessel of which a liquid is supplied from a lower part and a vaporized gas is discharged from an upper part; and a heat transfer tube group arranged in such a manner that a void penetrating in the up-and-down direction is formed in the vessel, wherein a maximum length of a cross-sectional figure of a flow path for the liquid exceeds 2 m, and the void occupies 5 to 10% of an area of the cross-sectional figure of the flow path.

Abstract: An autoclave (1) is one in which a heat application target molded material (W) is retained in shape by a retaining jig (4) which has a cavity (15) therein, and is heat-cured with high temperature gas. The autoclave is provided with: a pressure vessel (2) in the interior of which the molded material (W) is arranged; a high temperature gas supplying device (5) which supplies the high temperature gas to the molded material (W) within the pressure vessel (2); and an auxiliary high temperature gas supplying device (7) which supplies the high temperature gas into the interior of the cavity (15).

Abstract: A neutron radiation detector has a function that discriminates between neutron radiation and ? radiation based on a difference in pulse shape between photodetection signals from a neutron radiation detection scintillator, which includes a Ce-containing LiCaAlF6 single crystal.