Abstract: This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.

Abstract: A thermal head includes a substrate, a heat-generating portion disposed on the substrate, electrodes disposed on the substrate and electrically connected to the heat-generating portion, a driver IC disposed on the substrate and electrically connected to the electrodes, and a covering member covering the driver IC. In plan view, a center line of the driver IC extending in a main scanning direction and a highest position of the covering member are located farther form the heat-generating portion than a center line of the covering member extending in the main scanning direction.

Abstract: A laser-oscillation cooling device includes a laser excitation unit that excites a laser beam and locally emits heat, a storage tank that is capable of storing a cryogenic liquid at an atmospheric pressure and discharge the cryogenic liquid which is evaporated, a pressurization and supply unit that pressurizes the cryogenic liquid stored in the storage tank and supplies the pressurized cryogenic liquid to the laser excitation unit, and a decompression and return unit that decompresses the cryogenic liquid which is supplied to the laser excitation unit and used to cool the laser excitation unit and returns the cryogenic liquid to the storage tank.

Abstract: An evaporator includes: a vessel having a refrigerant inlet for receiving a refrigerant at a lower part of the vessel, and a refrigerant outlet for discharging the refrigerant in an evaporated state at an upper part of the vessel; and a plurality of heat-transfer tubes disposed so as to extend inside the vessel along a longitudinal direction of the vessel, and configured to transfer heat received from a fluid flowing inside the heat-transfer tubes to the refrigerant flowing outside the heat-transfer tubes. The plurality of heat-transfer tubes are disposed so that at least one downward flow passage is defined through the plurality of heat-transfer tubes or around the plurality of heat-transfer tubes, the at least one downward flow passage having a width larger than a representative interval between the plurality of heat-transfer tubes.

Abstract: An autoclave (1) is one in which a heat application target molded material (W) is retained in shape by a retaining jig (4) which has a cavity (15) therein, and is heat-cured with high temperature gas. The autoclave is provided with: a pressure vessel (2) in the interior of which the molded material (W) is arranged; a high temperature gas supplying device (5) which supplies the high temperature gas to the molded material (W) within the pressure vessel (2); and an auxiliary high temperature gas supplying device (7) which supplies the high temperature gas into the interior of the cavity (15).

Abstract: An autoclave (1) is one in which a heat application target molded material (W) is retained in shape by a retaining jig (4) which has a cavity (15) therein, and is heat-cured with high temperature gas. The autoclave is provided with: a pressure vessel (2) in the interior of which the molded material (W) is arranged; a high temperature gas supplying device (5) which supplies the high temperature gas to the molded material (W) within the pressure vessel (2); and an auxiliary high temperature gas supplying device (7) which supplies the high temperature gas into the interior of the cavity (15).

Abstract: A semiconductor device includes a semiconductor layer opposing to a bottom surface and a side surface of a gate electrode. An insulation film is provided between the bottom surface of the gate electrode and the semiconductor layer and between the side surface of the gate electrode and the semiconductor layer. A first conduction-type drain layer is provided in the semiconductor layer on a side of an end part of one of the bottom surface and the side surface of the gate electrode. A second conduction-type source layer is provided in the semiconductor layer opposing to the other one of the bottom surface and the side surface of the gate electrode. A second conduction-type extension layer is provided in the semiconductor layer opposing to a corner part between the side surface and the bottom surface of the gate electrode and has a lower impurity concentration than that of the source layer.

Abstract: A laser-oscillation cooling device includes a laser excitation unit that excites a laser beam and locally emits heat, a storage tank that is capable of storing a cryogenic liquid at an atmospheric pressure and discharge the cryogenic liquid which is evaporated, a pressurization and supply unit that pressurizes the cryogenic liquid stored in the storage tank and supplies the pressurized cryogenic liquid to the laser excitation unit, and a decompression and return unit that decompresses the cryogenic liquid which is supplied to the laser excitation unit and used to cool the laser excitation unit and returns the cryogenic liquid to the storage tank.

Abstract: According to one embodiment, a tunnel FET includes a semiconductor region of a first conductivity type, a gate electrode provided on a surface portion of the semiconductor region via a gate insulating film, a source region provided in the semiconductor region on one side of the gate electrode, and a drain region provided in the semiconductor region on the other side of the gate electrode. The source region is a region of either the first conductivity type or a second conductivity type having a higher impurity concentration than the semiconductor region of the first conductivity type. The drain region includes a Schottky barrier junction.

Abstract: A semiconductor device according to an embodiment includes a semiconductor layer. A gate dielectric film is provided on a surface of the semiconductor layer. A gate electrode includes a first gate part and a second gate part. The first gate part and the second gate part are provided on the semiconductor layer via the gate dielectric film. The first gate part and the second gate part have work functions respectively different from each other, and are electrically connected to each other. A drain layer of a first conductivity type is provided in the semiconductor layer on a side of one end of the gate electrode. A source layer of a second conductivity type is provided in the semiconductor layer on a side of the other end of the gate electrode and below the gate electrode. The source layer below the gate electrode has a substantially uniform impurity concentration.

Abstract: A device includes a first and a second semiconductor-layer. The second semiconductor-layer is on the first semiconductor-layer, and has a first and a second side-surface. A first gate-dielectric is on the first semiconductor-layer. A second gate-dielectric is on the first side-surface. A gate has a bottom surface facing the first semiconductor-layer, and a third side-surface facing the first side-surface. A first diffusion-layer of a first conductivity-type is in a region in the second semiconductor-layer on a side of the second side-surface, and forms a junction with a region in the second semiconductor-layer on a side of the first side-surface. A silicide is on the second side-surface. A source of the first conductivity-type is in the first semiconductor-layer on a side of the third side-surface. A drain layer of a second conductivity-type is in the first semiconductor-layer on a side of a fourth side-surface of the gate electrode.

Abstract: A thermal head includes a substrate, a heat-generating portion disposed on the substrate, electrodes disposed on the substrate and electrically connected to the heat-generating portion, a driver IC disposed on the substrate and electrically connected to the electrodes, and a covering member covering the driver IC. In plan view, a center line of the driver IC extending in a main scanning direction and a highest position of the covering member are located farther form the heat-generating portion than a center line of the covering member extending in the main scanning direction.

Abstract: A program for teleconference includes a first storing instruction of storing conference information, terminal information, and process information in association with each other, an audio acquiring instruction of acquiring audio data transmitted from a first terminal apparatus through a session established with a first conference process executed by the first terminal apparatus in response to a connection request, and an audio transmission controlling instruction of transmitting the audio data through a session established with a second conference process executed by a second terminal apparatus identified by second terminal information without transmitting the audio data through a session established with a third conference process executed by the first terminal apparatus. The second conference process is identified by second process information associated with the second terminal information in the storage area.

Abstract: A storage medium stores: a first acquiring instruction of, when newly starting the program, acquiring conference room information for identifying a teleconference of a connection target; a determining instruction of, by referring to particular information, determining whether there is an existing conference process executed by the program that is connected to a same teleconference identified by conference room information matching the conference room information acquired by the first acquiring instruction; and an audio processing instruction of performing at least one of first and second audio processes when there is no existing conference process in a new conference process without performing either the first or second audio process when there is the existing conference process, the first audio process relating to sound collected by a sound collector of the terminal apparatus, the second audio process relating to audio data received by a communicator of the terminal apparatus connected to the network.

Abstract: In one embodiment, a semiconductor device includes a first diffusion layer of a first conductive type and a second diffusion layer of a second conductive type which is a reverse conductive type of the first conductive type, the first conductive type first diffusion layer and the second conductive type diffusion layer being spaced apart and provided in a semiconductor layer, a pocket region of the second conductive type which is provided on a surface portion of the semiconductor layer adjacently to the first diffusion layer, and a first extension region of the first conductive type which is provided in the semiconductor layer to cover at least a portion of the pocket region. A second diffusion layer side end portion of the first extension region is positioned closer to a second diffusion layer side than a second diffusion layer side end portion of the pocket region.

Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate, and first and second transistors of first and second conductivity types on the substrate. The first transistor includes a first gate electrode on the substrate, a first source region of the second conductivity type and a first drain region of the first conductivity type disposed to sandwich the first gate electrode, and a first channel region of the first or second conductivity type disposed between the first source region and the first drain region. The second transistor includes a second gate electrode on the substrate, a second source region of the first conductivity type and a second drain region of the second conductivity type disposed to sandwich the second gate electrode, and a second channel region disposed between the second source region and the second drain region and having the same conductivity type as the first channel region.

Abstract: A device includes a gate and a gate dielectric film on a substrate. A first diffusion-layer of a first conductivity-type is in a surface of the substrate. A second diffusion-layer of a second conductivity-type is under the first diffusion-layer and forms a PN-junction with the bottom of the first diffusion-layer. A drain-layer of the first conductivity-type is in the substrate on one side of the gate. A source-layer of the second conductivity-type is provided in the substrate on other side of the gate. A first sidewall is on a side surface of the gate and on a top surface of the first diffusion-layer. A conductive-layer is on the source-layer at a position separated from the first sidewall. A top surface of the substrate in a separation region between the first sidewall and the conductive-layer is at a position equal to or lower than a bottom of the first diffusion-layer.

Abstract: There is provided a conference system which performs a remote conference by communicating conference data between a transmission terminal and a reception terminal. The transmission terminal receives input of the conference data including audio data, selects a real time mode of sequentially performing transmission of the input audio data and a package mode of performing transmission of the input audio data for each input of a predetermined unit amount, records the input audio data in the predetermined unit amount to generate audio record data when the package mode is selected, and transmits the input audio data to the reception terminal when the real time mode is selected and transmits the audio record data to the reception terminal when the package mode is selected. The reception terminal outputs the received input audio data preferentially over the received audio record data.

Abstract: A program for teleconference includes a first storing instruction of storing conference information, terminal information, and process information in association with each other, an audio acquiring instruction of acquiring audio data transmitted from a first terminal apparatus through a session established with a first conference process executed by the first terminal apparatus in response to a connection request, and an audio transmission controlling instruction of transmitting the audio data through a session established with a second conference process executed by a second terminal apparatus identified by second terminal information without transmitting the audio data through a session established with a third conference process executed by the first terminal apparatus. The second conference process is identified by second process information associated with the second terminal information in the storage area.

Abstract: A storage medium stores: a first acquiring instruction of, when newly starting the program, acquiring conference room information for identifying a teleconference of a connection target; a determining instruction of, by referring to particular information, determining whether there is an existing conference process executed by the program that is connected to a same teleconference identified by conference room information matching the conference room information acquired by the first acquiring instruction; and an audio processing instruction of performing at least one of first and second audio processes when there is no existing conference process in a new conference process without performing either the first or second audio process when there is the existing conference process, the first audio process relating to sound collected by a sound collector of the terminal apparatus, the second audio process relating to audio data received by a communicator of the terminal apparatus connected to the network.