Abstract: A magnetic coupling type isolator includes: a magnetic field generator for generating an external magnetic field by an input signal; a magnetoresistive element for detecting the external magnetic field and converting the detected magnetic field into an electric signal, the magnetoresistive element being electrically insulated from the magnetic field generator and positioned in a location capable of being magnetically coupled so as to be overlapped with the magnetic field generator as seen in a top plan view; and first and second shield films overlapped with the magnetic field generator and the magnetoresistive element as seen in a top plan view, wherein a distance between the magnetoresistive element and the second shield film is set to 8 to 100 ?m.

Abstract: A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2?x?0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

Abstract: A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 ? and 6 ? or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (?R/R) substantially identical to those of the known structure are maintained.

Abstract: An advantage of the application is to provide a magnetoresistance element capable of increasing a plateau magnetic field Hp1 while maintaining high ?RA. A magnetic layer 4c1 adjacent to a non-magnetic material layer 5 in a second fixed magnetic layer 4c constituting the fixed magnetic layer 4 is formed of a first Heusler-alloy layer represented by Co2x(Mn(1-z)Fez)x?y (where the element ? is any one element of 3B group, 4B group, and 5B group, x and y all are in the unit of at %, 3x+y=100 at %). Additionally, the content y is in the range of 20 to 30 at % and a Fe ratio z in MnFe is in the range of 0.2 to 0.8. Accordingly, the plateau magnetic field Hp1 may increase while maintaining high ?RA.

Abstract: A magnetic detection element capable of maintaining the ?RA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

Abstract: A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMn? sublayers each composed of a metal compound represented by the formula: Co2xMnx?y. The ? contains an element ? and Sb, the element ? being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMn? sublayers is in contact with a lower nonmagnetic material layer. The other CoMn? sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ?RA and a lower interlayer coupling magnetic field Hin compared with the known art.

Abstract: A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

Abstract: A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

Abstract: A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 ?. Accordingly, a high resistance change rate (?R/R) can be obtained.

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

Abstract: There are provided a magnetic detecting element capable of maintaining large ?RA and of reducing magnetostriction by improving a material forming a free magnetic layer, and a method of manufacturing the same. An NiFeX alloy layer is formed in a free magnetic layer. For example, the element X is Cu. The NiFeX alloy layer formed in the free magnetic layer makes it possible to maintain large ?RA and to more reduce the magnetostriction of the free magnetic layer, compared with a structure in which an NiFe alloy layer is formed in the free magnetic layer.

Abstract: A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0<a?25 and a+b=100 are satisfied).

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

Abstract: There is provided a magnetic detecting element by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX alloy layer, and a CoMnZ alloy layer. The CoMnX alloy layer is formed of a metal compound whose compositional formula is represented by CoaMnbXc (X is one or more elements selected from a group of Ge, Sn, Ga, and Sb, a, b, and c are atomic percent, and a+b+c=100 atomic percent). The CoMnZ alloy layer is formed of a metal compound whose compositional formula is represented by CodMneZf (Z is Al or Si, d, e, and f are atomic percent, and d+e+f=100 atomic percent).

Abstract: A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer, the atomic percentage of an element Z is decreased in a region close to a non-magnetic material layer. Consequently, the ferromagnetic coupling magnetic field due to magnetostatic coupling (topological coupling) between the pinned magnetic layer and the free magnetic layer can be reduced. At the same time, in a region at a distance from the non-magnetic material layer, the atomic percentage of an element Z is increased, a spin-dependent bulk scattering coefficient is increased, and a product of the amount of change in magnetic resistance and the element area of the magnetic sensing element can be maintained at a high level.

Abstract: There is provided a magnetic detecting element having a large ?RA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0?a?25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient ? increases, and the product ?RA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.

Abstract: A CPP magnetic sensing element is provided which may exhibit a large value of ?RA (the product of the resistance variation ?R and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of these layers has a (Co0.67Fe0.33)100-aZa alloy layer, wherein Z may represent at least one element selected from the group consisting of Al, Ga, Si, Ge, Sn, and Sb, and the parameter a may satisfy the relationship 0<a?30 in terms of atomic percent.

Abstract: An electrostatic capacitance diaphragm type pressure sensor which includes a stationary electrode and a diagraph that are arranged to oppose each other, and in which the diaphragm is deformed by an external force and a pressure is obtained from an electrostatic capacitance between the stationary electrode and diaphragm which changes in accordance with deformation of the diaphragm, includes an outer case which surrounds the main body of the sensor, a heater arranged on the inner surface of the outer case, a temperature sensor to measure the temperature inside the outer case, and a temperature adjustment circuit which compares a temperature signal obtained by the temperature sensor with a predetermined value and outputs a drive signal to drive the heater on the basis of the comparison result.

Abstract: A magnetic detecting device having a large ?RA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a NiaFeb alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47?a?77 and a+b=100), and a CoFe layer are laminated. In addition, pinned magnetic layers have heusler alloy layers, which are made of a heusler alloy such as a Co2MnGe alloy. Accordingly, the product ?RA of a magnetic resistance variation ?R of the magnetic detecting device and an area A of the device can have a value of 5 m??m2 more.