Abstract: A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

Abstract: A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (?R/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also discloded. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction ? of the free magnetic layer can be reduced and the resistance change ratio (?R/R) can be increased.

Abstract: A tunnel type magnetic sensor includes a fixed magnetic layer that has magnetization fixed in one direction, an insulating barrier layer, and a free magnetic layer that has magnetization varied by an external magnetic field, which are laminated in that order from the bottom. The insulating barrier layer is formed from titanium oxide, and on the free magnetic layer, a first protective layer of platinum or ruthenium is formed. Accordingly, compared to the structure in which the first protective layer is not formed or the first protective layer is formed from Al, Ti, Cu, or IrMn, while a high rate of change in resistance is maintained, the magnetostriction of the free magnetic layer can be effectively decreased. When the insulating barrier layer is formed from aluminum oxide, the rate of change in resistance is decreased, or the magnetostriction of the free magnetic layer cannot be effectively decreased.

Abstract: A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [220] planes are preferentially oriented in the direction parallel to the layer surface. The Heusler alloy layer is disposed on a bcc layer having a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [110] planes are preferentially oriented in the direction parallel to the layer surface.

Abstract: A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.

Abstract: A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that corresponds to an fcc layer having the face-centered cubic (fcc) structure. Equivalent crystal planes represented as [111] planes in the fcc structure, which are the closest packed planes, are exposed on the surface of the nonmagnetic layer.

Abstract: In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ?R×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ?R×A for the downstream part of the multilayer film.

Abstract: An advantage of the application is to provide a magnetoresistance element capable of increasing a plateau magnetic field Hp1 while maintaining high ?RA. A magnetic layer 4c1 adjacent to a non-magnetic material layer 5 in a second fixed magnetic layer 4c constituting the fixed magnetic layer 4 is formed of a first Heusler-alloy layer represented by Co2x(Mn(1-z)Fez)x?y (where the element a is any one element of 3B group, 4B group, and 5B group, x and y all are in the unit of at %, 3x+y=100 at %). Additionally, the content y is in the range of 20 to 30 at % and a Fe ratio z in MnFe is in the range of 0.2 to 0.8. Accordingly, the plateau magnetic field Hp1 may increase while maintaining high ?RA.

Abstract: Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer (upper magnetic layer) disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed in contact with the insulating barrier layer. The Fe composition ratio of the enhance layer is greater than that of the second pinned magnetic layer.

Abstract: Described herein is a tunnel type magnetic detection element and a manufacturing method thereof. In the tunnel type magnetic detection element, an enhance layer included in a free magnetic layer disposed on an insulating barrier layer contacts the insulating barrier layer, which may be made of an oxide such as titanium oxide. Under the insulating barrier layer, a second pinned magnetic layer constituting a pinned magnetic layer is formed. The second pinned magnetic layer has a fcc structure in which crystal planes equivalent to a (111) plane are aligned parallel to a layer surface, and the insulating barrier layer is formed to have a rutile structure or the like. The enhance layer is formed to have a bcc structure in which crystal planes equivalent to a (110) plane are aligned parallel to a layer surface.

Abstract: A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

Abstract: A magnetic detecting element and method of manufacturing the same are provided. The magnetic detecting element including a free magnetic layer and a second pinned magnetic layer is formed of a CoMnGeSi alloy layer represented by a composition formula of Co2xMnx(Ge1-zSiz)y (where x and y are atomic percent, and 3x+y=100 atomic percent). The content y in the composition formula is 23 atomic percent to 26 atomic percent, and a Si ratio Z in GeSi is 0.1 to 0.6. Accordingly, ?RA identical with a case when a CoMnGe alloy is used can be obtained, and a coupling magnetic field Hin or a coercive force Hc can be reduced.

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or ?-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

Abstract: A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMn? sublayers each composed of a metal compound represented by the formula: Co2xMnx?y. The ? contains an element ? and Sb, the element ? being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMn? sublayers is in contact with a lower nonmagnetic material layer. The other CoMn? sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ?RA and a lower interlayer coupling magnetic field Hin compared with the known art.

Abstract: A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose ? values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lower than those for down-spin conduction electrons when the magnetization of a free magnetic layer is changed to exhibit a lowest resistance. The magnetic detecting element exhibits an increased change in resistance per area.

Abstract: A magnetic sensing element includes a multilayer film including a pinned magnetic layer in which the magnetization direction is pinned in one direction, a free magnetic layer, and a nonmagnetic layer provided between the pinned magnetic layer and the free magnetic layer. In the magnetic sensing element, at least one of the pinned magnetic layer and the free magnetic layer includes a half-metallic alloy layer and a CoxFe100-x layer is provided between the half-metallic alloy layer and the nonmagnetic layer.

Abstract: A magnetic detection element capable of maintaining the ?RA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

Abstract: A magnetic detecting element capable of maintaining a large ?RA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an element X is at least one or two elements of Ge, Ga, In, Si, Pb, and Zn, and an element Rh is at least one or two elements of Ge, Ga, In, Si, Pb, Zn, Sn, Al, and Sb. By forming the CoMnXZ alloy layer or the CoMnXRh alloy layer in the free magnetic layer, the magnetostriction of the free magnetic layer can be reduced while maintaining the large ?RA, compared with a case where only the CoMnX alloy is formed.

Abstract: A magnetic sensing element exhibiting a large ?RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant ?s. The free magnetic layer includes a Co2MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (NiaFe100-a)bX100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80<a?100, and b may represent a composition ratio satisfying 60<b?100). Consequently, the magnetostriction constant ?s and the coercive force Hc of the free magnetic layer may be decreased and the soft magnetic properties of the free magnetic layer may be improved.

Abstract: A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the nonmagnetic metal layer overlap with each other, while each of the crystal structures is deformed. The deformations in the crystal structure of the first magnetic sublayer increase the magnetostriction constant, thereby increasing the magnetoelastic effect of the magnetic sensor.