Patents by Inventor Yosuke Ide

Yosuke Ide has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same
    Patent number: 7499249
    Abstract: A magnetic detecting element capable of maintaining a large ?RA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an element X is at least one or two elements of Ge, Ga, In, Si, Pb, and Zn, and an element X in the latter case is at least one or two elements of Ge, Ga, In, Si, Pb, Zn, Sn, Al, and Sb. By forming the CoMnXZ alloy layer or the CoMnXRh alloy layer in the free magnetic layer, the magnetostriction of the free magnetic layer can be reduced while maintaining the large ?RA, compared with a case where only the CoMnX alloy is formed.
    Type: Grant
    Filed: April 24, 2006
    Date of Patent: March 3, 2009
    Assignee: TDK Corporation
    Inventors: Yosuke Ide, Masamichi Saito, Masahiko Ishizone, Naoya Hasegawa
  • Magnetic detective head comprising free layer
    Patent number: 7499248
    Abstract: A free magnetic layer is a laminated body of a Co2MnZ alloy layer (Z is one or more elements selected from a group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a CoaFe100-a alloy layer. The CoaFe100-a alloy layer has a composition ratio 76?a?100 or a face-centered cubic (fcc) structure, in which an equivalent crystal face expressed as a {111} plane is preferentially oriented in a direction parallel to a film surface, and the CoaFe100-a alloy layer is in contact with the nonmagnetic material layer.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: March 3, 2009
    Assignee: TDK Corporation
    Inventors: Masahiko Ishizone, Masamichi Saito, Yosuke Ide, Naoya Hasegawa
  • Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device
    Patent number: 7480122
    Abstract: A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free magnetic layer is formed of a layer, for example, a CoMnGeCu layer. In the CoMnGeCu layer, a bulk scattering coefficient may become larger, as compared with a CoMnGe layer. As a result, it is possible to increase the product between a magnetoresistance variation and a device area. Further, the ferromagnetic coupling magnetic field can be decreased. The Cu is added by a range which is larger than 0 at. % and not more than 17.5 at. % (average composition ratio).
    Type: Grant
    Filed: February 28, 2006
    Date of Patent: January 20, 2009
    Assignee: TDK Corporation
    Inventors: Yosuke Ide, Masamichi Saito, Masahiko Ishizone, Naoya Hasegawa, Kazumasa Nishimura
  • Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer
    Patent number: 7466525
    Abstract: A magnetic sensing element exhibiting a large ?RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant ?s. The free magnetic layer includes a Co2MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (NiaFe100-a)bX100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80<a?100, and b may represent a composition ratio satisfying 60<b?100). Consequently, the magnetostriction constant ?s and the coercive force Hc of the free magnetic layer may be decreased and the soft magnetic properties of the free magnetic layer may be improved.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: December 16, 2008
    Assignee: TDK Corporation
    Inventors: Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Masahiko Ishizone
  • Tunneling magnetic sensor including platinum layer and method for producing the same
    Publication number: 20080291586
    Abstract: A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (?R/R) at low RA than known tunneling magnetic sensors.
    Type: Application
    Filed: August 3, 2007
    Publication date: November 27, 2008
    Inventors: Masahiko Ishizone, Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Ryo Nakabayashi, Kazumasa Nishimura
  • Tunneling magnetic sensing element including Pt sublayer disposed between free magnetic sublayer and enhancing sublayer and method for producing tunneling magnetic sensing element
    Publication number: 20080286612
    Abstract: There is provided a tunneling magnetic sensing element having an insulating barrier layer composed of Ti—O, a high rate of resistance change (?R/R) compared with the known art, and an interlayer coupling magnetic field Hin lower than that in the known art while low RA is maintained and the coercivity of a free magnetic layer is maintained at a low level comparable to the known art; and a method for producing the tunneling magnetic sensing element. An insulating barrier layer is composed of Ti—O. A free magnetic layer is formed on the insulating barrier layer and has a laminated structure of an enhancing sublayer composed of a CoFe alloy, a Pt sublayer, and a soft magnetic sublayer composed of a NiFe alloy, stacked in that order from the bottom.
    Type: Application
    Filed: August 3, 2007
    Publication date: November 20, 2008
    Inventors: Masahiko Ishizone, Masamichi Saito, Kazumasa Nishimura, Yosuke Ide, Ryo Nakabayashi, Naoya Hasegawa
  • MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080285180
    Abstract: An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (? R/R) or the like, thereby achieving a structure suitable for increasing recording density.
    Type: Application
    Filed: May 15, 2008
    Publication date: November 20, 2008
    Inventors: Kenichi Tanaka, Eiji Umetsu, Kazuaki Ikarashi, Kota Asatsuma, Norimasa Okanishi, Yoshihiro Nishiyama, Masamichi Saito, Yosuke Ide, Kazumasa Nishimura, Ryo Nakabayashi, Hidekazu Kobayashi, Akio Hanada, Naoya Hasegawa
  • TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER
    Publication number: 20080261082
    Abstract: A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.
    Type: Application
    Filed: October 3, 2007
    Publication date: October 23, 2008
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Yosuke Ide, Masahiko Ishizone, Masamichi Saito, Naoya Hasegawa, Yoshihiro Nishiyama, Akio Hanada, Hidekazu Kobayashi
  • Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon and method for manufacturing tunneling magnetoresistive sensor
    Publication number: 20080253038
    Abstract: A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.
    Type: Application
    Filed: August 2, 2007
    Publication date: October 16, 2008
    Inventors: Ryo Nakabayashi, Kazumasa Nishimura, Yosuke Ide, Masahiko Ishizone, Masamichi Saito, Naoya Hasegawa
  • TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR PRODUCING SAME
    Publication number: 20080225443
    Abstract: A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (?R/R) compared with the related art.
    Type: Application
    Filed: February 25, 2008
    Publication date: September 18, 2008
    Inventors: Kazumasa Nishimura, Yosuke Ide, Naoya Hasegawa, Masamichi Saito, Yoshihiro Nishiyama, Ryo Nakabayashi, Hidekazu Kobayashi
  • TUNNELING MAGNETORESISTIVE ELEMENT WHICH INCLUDES Mg-O BARRIER LAYER AND IN WHICH NONMAGNETIC METAL SUBLAYER IS DISPOSED IN ONE OF MAGNETIC LAYERS
    Publication number: 20080218913
    Abstract: In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 ? or more and about 5 ? or less.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 11, 2008
    Inventors: Kazumasa Nishimura, Masamichi Saito, Yosuke Ide, Ryo Nakabayashi, Yoshihiro Nishiyama, Hidekazu Kobayashi, Naoya Hasegawa
  • TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR PRODUCING SAME
    Publication number: 20080186639
    Abstract: A tunneling magnetic sensing element includes a pinned magnetic layer with a magnetization direction that is pinned in one direction, an insulating barrier layer, and a free magnetic layer with a magnetization direction that varies in response to an external magnetic field. The insulating barrier layer comprises magnesium (Mg), and a first protective layer composed of Mg is disposed on the free magnetic layer.
    Type: Application
    Filed: February 6, 2008
    Publication date: August 7, 2008
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Masahiko Ishizone
  • TUNNELING MAGNETIC SENSING ELEMENT HAVING FREE MAGNETIC LAYER INSERTED WITH NONMAGNETIC METAL LAYERS
    Publication number: 20080186638
    Abstract: A tunneling magnetic sensing element includes a free magnetic layer disposed on an insulating barrier layer, the free magnetic layer including an enhancement layer, a first soft magnetic layer, a first nonmagnetic metal layer, a second soft magnetic layer, a second nonmagnetic metal layer, and a third soft magnetic layer disposed in that order from the bottom. The enhancement layer is, for example, composed of Co—Fe, each of the soft magnetic layers is, for example, composed of Ni—Fe, and each of the nonmagnetic metal layers is, for example, composed of Ta. Consequently, it is possible to stably obtain a high rate of change in resistance (?R/R) compared with the known art.
    Type: Application
    Filed: February 5, 2008
    Publication date: August 7, 2008
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Hidekazu Kobayashi, Yoshihiro Nishiyama, Yosuke Ide, Masamichi Saito, Naoya Hasegawa
  • TUNNELING MAGNETIC DETECTING ELEMENT AND METHOD FOR MAKING THE SAME
    Publication number: 20080182111
    Abstract: A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.
    Type: Application
    Filed: November 29, 2007
    Publication date: July 31, 2008
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Masahiko Ishizone
  • TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080160326
    Abstract: A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of platinum (Pt) disposed on the free magnetic layer. Consequently, it is possible to greatly decrease the magnetostriction of the free magnetic layer while maintaining a high rate of change in resistance compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
    Type: Application
    Filed: November 28, 2007
    Publication date: July 3, 2008
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Masahiko Ishizone
  • TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20080160325
    Abstract: A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
    Type: Application
    Filed: November 27, 2007
    Publication date: July 3, 2008
    Inventors: Kazumasa Nishimura, Ryo Nakabayashi, Naoya Hasegawa, Masamichi Saito, Yosuke Ide, Masahiko Ishizone
  • TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER
    Publication number: 20080158739
    Abstract: A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 ?. Accordingly, a high resistance change rate (?R/R) can be obtained.
    Type: Application
    Filed: February 6, 2007
    Publication date: July 3, 2008
    Applicant: ALPS ELECTRIC CO., LTD.
    Inventors: Yosuke Ide, Naoya Hasegawa, Masamichi Saito, Ryo Nakabayashi, Yoshihiro Nishiyama, Kazumasa Nishimura, Hidekazu Kobayashi
  • TUNNELING MAGNETIC SENSING ELEMENT INCLUDING NON-MAGNETIC METAL LAYER BETWEEN MAGNETIC LAYERS
    Publication number: 20080158738
    Abstract: A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 ? and 6 ? or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (?R/R) substantially identical to those of the known structure are maintained.
    Type: Application
    Filed: February 6, 2007
    Publication date: July 3, 2008
    Applicant: ALPS ELECTRIC CO., LTD.
    Inventors: Ryo Nakabayashi, Kazumasa Nishimura, Yosuke Ide, Yoshihiro Nishiyama, Hidekazu Kobayashi, Masamichi Saito, Naoya Hasegawa
  • TUNNELING MAGNETIC SENSOR INCLUDING TIO-BASED INSULATING BARRIER LAYER AND METHOD FOR PRODUCING THE SAME
    Publication number: 20080123223
    Abstract: A tunneling magnetic sensor has a multilayer part including, from bottom to top, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is formed of titanium magnesium oxide (TiMgO) and contains magnesium in an amount of about 4 to 20 atomic percent based on 100 atomic percent of the total content of titanium and magnesium. The insulating barrier layer thus does not have a high concentration of magnesium. This tunneling magnetic sensor can provide a higher rate of resistance change (?R/R) at a lower RA (the product of sensor resistance, R, and sensor area, A) than known tunneling magnetic sensors.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 29, 2008
    Applicant: ALPS ELECTRIC CO., LTD.
    Inventors: Yosuke Ide, Naoya Hasegawa, Masamichi Saito, Masahiko Ishizone, Ryo Nakabayashi, Kazumasa Nishimura
  • Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer
    Patent number: 7362546
    Abstract: A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the non-magnetic metal layer are being aligned with each other, strains are generated in the individual crystal structures. By generating the strain in the crystal structure of the first magnetic layer, the magnetostriction constant ? is increased. As a result, a magnetic sensor having a large magnetoelastic effect can be provided.
    Type: Grant
    Filed: August 24, 2004
    Date of Patent: April 22, 2008
    Assignee: Alps Electric Co., Ltd
    Inventors: Naoya Hasegawa, Eiji Umetsu, Masamichi Saito, Yosuke Ide, Masahiro Oshima