Abstract: There is provided a magnetic detecting element which can realize high reproduction power and reduce asymmetry of reproduction waveforms by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX alloy layer, and a CoMnZ alloy layer. The CoMnX alloy layer is formed of a metal compound whose compositional formula is represented by CoaMnbXc (X is one or more elements selected from a group of Ge, Sn, Ga, and Sb, a, b, and c are atomic percent, and a+b+c=100 atomic percent). The CoMnZ alloy layer is formed of a metal compound whose compositional formula is represented by CodMneZf (Z is Al or Si, d, e, and f are atomic percent, and d+e+f=100 atomic percent).

Abstract: A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the individual layers of the multilayer film. The nonmagnetic layer is composed of Cu and has a face-centered cubic lattice crystal structure in which the {111} planes are preferentially oriented in a direction parallel to the surfaces of the layer. At least one of the pinned magnetic layer and the free magnetic layer includes a Co2Mn(Ge1-xSnx) alloy layer, the subscript x satisfying the range of 0.2?x?0.8; and the Co2Mn(Ge1-xSnx) alloy layer has a body-centered cubic lattice crystal structure in which the {110} planes are preferentially oriented in a direction parallel to the surfaces of the layer.

Abstract: A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free magnetic layer is formed of a layer, for example, a CoMnGeCu layer. In the CoMnGeCu layer, a bulk scattering coefficient may become larger, as compared with a CoMnGe layer. As a result, it is possible to increase the product between a magnetoresistance variation and a device area. Further, the ferromagnetic coupling magnetic field can be decreased. The Cu is added by a range which is larger than 0 at. % and not more than 17.5 at. % (average composition ratio).

Abstract: A free magnetic layer is a laminated body of a CO2MnZ alloy layer (Z is one or more elements selected from a group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a CoaFe100-a alloy layer. The CoaFe100-a alloy layer has a composition ratio 76?a?100 or a face-centered cubic (fcc) structure, in which an equivalent crystal face expressed as a {111} plane is preferentially oriented in a direction parallel to a film surface, and the CoaFe100-a alloy layer is in contact with the nonmagnetic material layer.

Abstract: A magnetic detecting device having a large ?RA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a NiaFeb alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47?a?77 and a+b=100), and a CoFe layer are laminated. In addition, pinned magnetic layers have heusler alloy layers, which are made of a heusler alloy such as a Co2MnGe alloy. Accordingly, the product ?RA of a magnetic resistance variation ?R of the magnetic detecting device and an area A of the device can have a value of 5 m??m2 or more.

Abstract: A magnetic layer 14c of a pinned magnetic layer 14 has a three-layered structure formed of a CoFe layer 14c1, a NiaFeb alloy layer 14c2 (where a and b each indicate atomic percent, and 0<a?25 and a+b=100 are satisfied), and a CoFe layer 14c3 laminated in that order from the bottom. The content of Ni in the NiaFeb alloy layer 14c2 is set in the range of more than 0 to 25 atomic percent, which is smaller than that in the past. Accordingly, a product ?R·A can be increased as compared to that in the past, ?R being the change in resistance and A being an element area of a magnetic sensor.

Abstract: There is provided a magnetic detecting element having a large ?RA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0?a?25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient ? increases, and the product ?RA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.

Abstract: There are provided a magnetic detecting element capable of maintaining large ?RA and of reducing magnetostriction by improving a material forming a free magnetic layer, and a method of manufacturing the same. An NiFeX alloy layer is formed in a free magnetic layer. For example, the element X is Cu. The NiFeX alloy layer formed in the free magnetic layer makes it possible to maintain large ?RA and to more reduce the magnetostriction of the free magnetic layer, compared with a structure in which an NiFe alloy layer is formed in the free magnetic layer.

Abstract: A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer, the atomic percentage of an element Z is decreased in a region close to a non-magnetic material layer. Consequently, the ferromagnetic coupling magnetic field due to magnetostatic coupling (topological coupling) between the pinned magnetic layer and the free magnetic layer can be reduced. At the same time, in a region at a distance from the non-magnetic material layer, the atomic percentage of an element Z is increased, a spin-dependent bulk scattering coefficient is increased, and a product of the amount of change in magnetic resistance and the element area of the magnetic sensing element can be maintained at a high level.

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract: A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film.

Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized.

Abstract: An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.

Abstract: A magnetic sensing element exhibiting a large ?RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant ?s. The free magnetic layer includes a Co2MnZ alloy layer (where Z may represent at least one element selected from the group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a (NiaFe100-a)bX100-b alloy layer (where X may represent at least one element selected from the group consisting of Cu, Au, Ag, Zn, Mn, Al, Cd, Zr, and Hf, a may represent a composition ratio satisfying 80<a?100, and b may represent a composition ratio satisfying 60<b?100). Consequently, the magnetostriction constant ?s and the coercive force Hc of the free magnetic layer may be decreased and the soft magnetic properties of the free magnetic layer may be improved.

Abstract: A CPP magnetic sensing element is provided which may exhibit a large value of ?RA (the product of the resistance variation ?R and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of these layers has a (Co0.67Fe0.33)100-aZa alloy layer, wherein Z may represent at least one element selected from the group consisting of Al, Ga, Si, Ge, Sn, and Sb, and the parameter a may satisfy the relationship 0<a?30 in terms of atomic percent.

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract: A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film.

Abstract: In a magnetic sensing element, the amounts of spin-dependent bulk scattering in the upstream part of a multilayer film and in the downstream part of the multilayer film are controlled to be asymmetric. Thus, a value ?R×A, which represents the variation in magnetoresistance×element area, for the upstream part of the multilayer film is controlled so as to be smaller than the value ?R×A for the downstream part of the multilayer film.

Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized.

Abstract: When a pinned magnetic layer includes an underlayer and a Heusler alloy layer, a product ?R×A of the amount of change in resistance and an element surface area of a magnetic sensor per unit area is increased. That is, a magnetic field detection sensitivity of the magnetic sensor can be improved. It is believed that the magnetic field detection sensitivity of the magnetic sensor is improved by the present invention because a misfit percentage between the underlayer and the Heusler alloy layer is small, and therefore the crystallinity or the periodicity of the Heusler alloy layer is improved.