Abstract: A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film.

Abstract: An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract: A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state.

Abstract: A spin valve thin film magnetic element is provided composed of an antiferromagnetic layer; a pinned magnetic layer, formed in contact with the antiferromagnetic layer, in which the direction of magnetization is pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; and a free magnetic layer in contact with the nonmagnetic conductive layer, wherein the free magnetic layer is composed of a nonmagnetic intermediate layer, and the first and second free magnetic layers holding the nonmagnetic intermediate layer therebetween; the first free magnetic layer and the second free magnetic layer are antiferromagnetically coupled to enter the ferrimagnetic state; and a resistivity of the first free magnetic layer in the side farther from the nonmagnetic intermediate layer is higher than a resistivity of the second free magnetic layer in the nonmagnetic intermediate layer side.

Abstract: The present invention provides a spin valve thin film magnetic element in which the sensitivity and the rate of change in resistance can be increased while stably maintaining the ferrimagnetic state of a free magnetic layer. The spin valve thin film magnetic element includes an antiferromagnetic layer, a pinned magnetic layer in which the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the thickness of the second free magnetic layer provided on the nonmagnetic conductive layer side being larger than that of the first free magnetic layer.

Abstract: An exchange coupling film includes a first antiferromagnetic layer formed on a pinned magnetic layer, and a second antiferromagnetic layer formed thereon. A composition ratio of an element X in the first antiferromagnetic layer is larger than that of the second antiferromagnetic layer. Preferably, a non-aligned state is created at an interface between the first antiferromagnetic layer and the pinned magnetic layer, whereby a large exchange coupling magnetic field is obtained upon heat-treatment.

Abstract: A spin-valve thin-film magnetic element includes a substrate; an antiferromagnetic layer; a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization direction of the free magnetic layer being aligned in a direction perpendicular to the magnetization direction of the pinned magnetic layer; and a back layer composed of a nonmagnetic conductive material formed in contact with the free magnetic layer at the opposite side of the nonmagnetic conductive layer. The back layer is composed of at least one metal selected from the group consisting of Ru, Pt, Ir, Rh, Pd, Os, and Cr.

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract: A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

Abstract: The present invention provides a spin-valve thin film magnetic element comprising an antiferromagnetic layer, a pinned magnetic layer in which the direction of magnetization is fixed by an exchange coupling magnetic field with the antiferromagnetic layer, a non-magnetic conductive layer, and a free magnetic layer, at least one of the pinned magnetic layer and the free magnetic layer being divided into two layers of a first magnetic layer and a second magnetic layer via a non-magnetic intermediate layer, the directions of magnetization of the first and second magnetic layers being in an antiparallel relation to one another, and at least one of the pinned magnetic layer and the free magnetic layer being in a ferrimagnetic state, wherein each of the first and second magnetic layers has a NiFe layer at the side making contact with at least the non-magnetic intermediate layer, the non-magnetic intermediate layer comprises Ru with a thickness of 0.27 to 1.

Abstract: The present invention provides a spin-valve thin film magnetic element comprising an antiferromagnetic layer, a pinned magnetic layer in which the direction of magnetization is fixed by an exchange coupling magnetic field with the antiferromagnetic layer, a non-magnetic conductive layer, and a free magnetic layer, at least one of the pinned magnetic layer and the free magnetic layer being divided into two layers of a first magnetic layer and a second magnetic layer via a non-magnetic intermediate layer, the directions of magnetization of the first and second magnetic layers being in an antiparallel relation to one another, and at least one of the pinned magnetic layer and the free magnetic layer being in a ferrimagnetic state, wherein each of the first and second magnetic layers has a NiFe layer at the side making contact with at least the non-magnetic intermediate layer, the non-magnetic intermediate layer comprises Ru with a thickness of 0.27 to 1.

Abstract: A spin-valve magnetoresistive element includes an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic interlayer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a pair of longitudinal biasing layers, and a pair of lead layers. When a detecting current is applied from the lead layers, the magnetization vector of the free magnetic layer is aligned in a direction intersecting the magnetization vector of the second pinned magnetic layer, and the magnetization vector of the second pinned magnetic layer is tilted by an angle &thgr; from the normal of a track width direction toward a direction opposite to a longitudinal biasing magnetic field, in order to reduce asymmetry of the output.

Abstract: The present invention provides a spin-valve thin film magnetic element comprising an antiferromagnetic layer, a pinned magnetic layer in which the direction of magnetization is fixed by an exchange coupling magnetic field with the antiferromagnetic layer, a non-magnetic conductive layer, and a free magnetic layer, at least one of the pinned magnetic layer and the free magnetic layer being divided into two layers of a first magnetic layer and a second magnetic layer via a non-magnetic intermediate layer, the directions of magnetization of the first and second magnetic layers being in an antiparallel relation to one another, and at least one of the pinned magnetic layer and the free magnetic layer being in a ferrimagnetic state, wherein each of the first and second magnetic layers has a NiFe layer at the side making contact with at least the non-magnetic intermediate layer, the non-magnetic intermediate layer comprises Ru with a thickness of 0.27 to 1.

Abstract: A-magnetic sensing element includes a laminate, the laminate including a first antiferromagnetic layer; a pinned magnetic layer, the magnetization direction thereof being pinned by the first antiferromagnetic layer; a nonmagnetic conductive layer; a free magnetic layer, the magnetization direction thereof being variable in response to an external magnetic field; a nonmagnetic interlayer; a ferromagnetic layer; and a second antiferromagnetic layer. The laminate has a recess extending through the second antiferromagnetic layer and the ferromagnetic layer, a bottom face of the recess lying in the nonmagnetic interlayer, the width of the bottom face in a track width direction being equal to a track width. The free magnetic layer is magnetized in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer as a result of magnetic coupling with the ferromagnetic layer. A method for making such a magnetic sensing element is also disclosed.

Abstract: In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.

Abstract: A longitudinal bias layer is laminated above a free magnetic layer with a nonmagnetic layer provided therebetween so that the magnetization direction of the free magnetic layer is oriented by RKKY interaction with the longitudinal bias layer. The RKKY interaction exerts only between the longitudinal bias layer and the regions of the free magnetic layer which are located directly below both ends D of the longitudinal bias layer. Therefore, a thin film magnetic element can be provided, in which the width dimension of a recess formed in the longitudinal bias layer coincides with the magnetic track width.

Abstract: The present invention provides a spin-valve type thin film magnetic element that is able to certainly align the magnetization direction of the free magnetic layer in one direction by improving the exchange coupling magnetic field generated between the bias layers and ferromagnetic layer, and is able to reduce the thickness of the bias layer to be smaller than the thickness of the bias layer of the conventional spin-valve type thin film magnetic element for obtaining the same magnitude of the exchange coupling magnetic layer as that in the conventional spin-valve type thin film magnetic element.

Abstract: An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has a region in which the ratio of the atomic percent of the element X to Mn increases in a direction towards said ferromagnetic layer. The crystalline structure of at least part of said antiferromagnetic layer has a CuAu0I type face-centered square ordered lattice.

Abstract: A spin-valve thin-film magnetic element includes a substrate; an antiferromagnetic layer; a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization direction of the free magnetic layer being aligned in a direction perpendicular to the magnetization direction of the pinned magnetic layer; and a back layer composed of a nonmagnetic conductive material formed in contact with the free magnetic layer at the opposite side of the nonmagnetic conductive layer. The back layer is composed of at least one metal selected from the group consisting of Ru, Pt, Ir, Rh, Pd, Os, and Cr.