Abstract: This application provides a method for sending a data volume report.

Abstract: Embodiments of this application disclose a data transmission method. The method is applied to a first communications device or a chip in the first communications device, and the first communications device is an intermediate forwarding node, a serving node of a terminal, a DeNB, or a distributed unit DU in a DeNB system. The method includes: obtaining first data and sending, to a second communications device, a first message including the first data and a type identifier, where the type identifier is used to indicate a type of the first data, and the type of the first data includes at least one of user plane data, a status report, a control plane message, and a radio resource control RRC message of the terminal.

Abstract: Structures for laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices, as well as methods of forming laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices. A gate electrode is arranged to extend about a semiconductor fin projecting from a substrate. A drain region is arranged in the substrate, and a source region is coupled with the semiconductor fin. The source region is arranged over the semiconductor fin. A drift region is arranged in the substrate between the drain region and the semiconductor fin. The drain region, source region, and drift region have a given conductivity type. The drift region has a lower electrical conductivity than the drain region.

Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.

Abstract: Embodiments of this application provide a flash interface controller and an operation command processing method, and relate to the field of data storage. Programmable first type microcode and second type microcode are introduced to a flash interface controller. The first type microcode can be modified through programming to adapt to a procedure of parsing an operation command of a new protocol, and the second type microcode can be modified through programming to adapt to a flash bus operation required by a new flash interface standard. An operation command can be parsed by only fixing logics of physical modules in the flash interface controller and reading first type microcode and second type microcode that are related to the operation command. Therefore, various protocols and flash interface standards can be adapted to, and flexibility is good.

Abstract: Silicon-controlled rectifiers and methods for forming a silicon-controlled rectifier. A first well of a first conductivity type is arranged in a substrate, and second and third wells of a second conductivity type are arranged in the substrate between the first well and the top surface of the substrate. A deep trench isolation region is laterally arranged between the first well of the second conductivity type and the second well of the second conductivity type. The second well is adjoined with the first well along a first interface, the third well is adjoined with the first well along a second interface, and the deep trench isolation region extends the top surface of the substrate past the first interface and the second interface and into the first well. A doped region of the first conductivity type is arranged in the substrate between the second well and the top surface of the substrate.

Abstract: This application discloses a communication method and a communications device. The communication method includes: receiving configuration information sent by a base station, where the configuration information includes information about a first signal and quasi-co-location relationship information, and the quasi-co-location relationship information indicates that there is a quasi-co-location relationship between a port for sending the first signal and a port for sending a second signal; and obtaining a measurement quantity of the first signal based on a measurement quantity of the second signal and the quasi-co-location relationship information. According to the method, a quasi-co-location relationship is obtained and a measurement quantity is obtained based on the quasi-co-location relationship.

Abstract: A grant-free resource configuration method and an apparatus are provided. The method includes: listening to, by a terminal device, a physical downlink control channel on a paging occasion by using a grant-free resource configuration identifier; and obtaining, by the terminal device on the physical downlink control channel or a physical downlink shared channel indicated by the physical downlink control channel, grant-free resource configuration information sent by a network device. In this grant-free resource configuration solution, the terminal device listens to a physical downlink control channel on a same paging occasion by using different identifiers, and obtains grant-free resource configuration information. A configuration occasion is preset, to ensure that the grant-free resource configuration information can be effectively received by the terminal device. In addition, the grant-free resource configuration identifier is used, to facilitate grant-free resource configuration for the terminal device.

Abstract: A system for automatic buffer overflow warning inspection and bug repair is disclosed. The system includes a first module for warning reachability analysis, the first module accepts static overflow warnings and source code as an input, the first module is functionally connected to the second and the third modules, and sends out a warning path set as an output. The system also includes a second module for guided symbolic execution, the second module is functionally connected to the first module and the third module. The system further includes a third module for buffer overflow validation, the third module is functionally connected to the first, the second and the four modules and sends out undecided warnings and false warnings as output. The system further includes a fourth module for targeted automatic repair, the fourth module is functionally connected to the third module and sends out true warnings as output.

Abstract: The invention provides an antenna structure comprising a plurality of wire segments formed in a loop. Connecting units are provided between the wire segments, each of which is switchable between a conductive state and a reactive state. With the connecting units in the conductive state a loop antenna is formed with a first (longer) signal range and with the connecting units in the reactive state an antenna structure is formed with a second (shorter) signal range. Said reactive state is adapted to introduce a phase delay between the adjacent wire segments. This enables the same antenna to be used for long range signal communication and short range communication, for example for system configuration or commissioning. The antenna structure may be used with luminaires of a lighting system.

Abstract: Silicon-controlled rectifiers and methods for forming a silicon-controlled rectifier. A first well of a first conductivity type is arranged in a substrate, and second and third wells of a second conductivity type are arranged in the substrate between the first well and the top surface of the substrate. A deep trench isolation region is laterally arranged between the first well of the second conductivity type and the second well of the second conductivity type. The second well is adjoined with the first well along a first interface, the third well is adjoined with the first well along a second interface, and the deep trench isolation region extends the top surface of the substrate past the first interface and the second interface and into the first well. A doped region of the first conductivity type is arranged in the substrate between the second well and the top surface of the substrate.

Abstract: A fused tricyclic compound and use thereof as a medicament, in particular as a medicament for the treatment and/or prevention of hepatitis B. Specifically, a compound having Formula (I) or a stereoisomer, a tautomer, an N-oxide, a solvate, a metabolite, a pharmaceutically acceptable salt or a prodrug thereof, wherein each variate is as defined in specification. The compound also includes a Formula (I) or a stereoisomer, a tautomer, an N-oxide, a solvate, a metabolite, a pharmaceutically acceptable salt or a prodrug thereof as a medicament, especially as a medicament for the treatment and/or prevention of hepatitis B.

Abstract: The invention provides an electrical device, comprising a transformer (22) with a ferrite core (24) and an RF antenna (14). The antenna (14) is electrically isolated from said transformer (22), and a geometric dimension of the antenna (14) has a maximum dimension along or around a surface of the RF antenna (i.e. within the plane of the antenna or around a curved surface defining the antenna), and the RF antenna (14) is spatially spaced from a nearest part of the ferrite core (24) by less than the maximum dimension. This design makes use of the ferrite core of a transformer to provide isolation of the antenna from other parts of the device. This assists in reducing the impact of those parts of the device on the performance of the antenna, in particular the reception range.

Abstract: The disclosure provides a Super304H steel welding wire capable of resisting high-temperature creep and aging embrittlement, which comprises the following chemical components in percentage by mass: 0.04-0.1% of C, 0.4-1.5% of Mn, 7.5-12.5% of Ni, ?0.5% of Si, 17.0-19.0% of Cr, ?0.4% of Mo, 2.5-3.5% of Cu, 0.3-0.6% of Nb, 0.05-0.12% of N, ?0.01% of S, ?0.02% of P and the balance of Fe and other inevitable impurity elements. The Welding wire can be used for welding of Super304H steel used in ultra super critical thermal power stations, has a weld being in a double-phase structure of austenite and a small amount of ferrite (volume fraction is 3-12%), and has good hot cracking resistance capability.

Abstract: Structures for laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices, as well as methods of forming laterally-diffused metal-oxide-semiconductor devices and drain-extended metal-oxide-semiconductor devices. A gate electrode is arranged to extend about a semiconductor fin projecting from a substrate. A drain region is arranged in the substrate, and a source region is coupled with the semiconductor fin. The source region is arranged over the semiconductor fin. A drift region is arranged in the substrate between the drain region and the semiconductor fin. The drain region, source region, and drift region have a given conductivity type. The drift region has a lower electrical conductivity than the drain region.

Abstract: This application discloses a communication method and a communications apparatus. The method includes: receiving, by a terminal device, reference signal configuration information sent by a network device, where the reference signal configuration information includes at least one of the following information: a beam sweeping type and a reference signal beam indication; receiving, by the terminal device, a reference signal and data that are sent by the network device; and determining, by the terminal device based on the reference signal configuration information, whether data can be mapped onto another resource element that is located on a same orthogonal frequency division multiplexing (OFDM) symbol as the reference signal. The corresponding apparatus is further disclosed. According to technical solutions provided in this application, reliable data reception can be implemented.

Abstract: The present invention provides a receiver having an input node, a blocker detector, a translational filter and a low-noise amplifier. The input node is arranged to receive an input signal. The blocker detector is configured to detect if the input signal has a blocker to generate a detection result. The translational filter is configured to filter out an output-of-band blocker of the input signal to generate a filtered input signal at the input node or not filter output the output-of-band blocker of the input signal according to the detection result. The low-noise amplifier is configured to receive the filtered input signal or the input signal to generate an amplified input signal.

Abstract: Embodiments of this application provide a flash interface controller and an operation command processing method, and relate to the field of data storage. Programmable first type microcode and second type microcode are introduced to a flash interface controller. The first type microcode can be modified through programming to adapt to a procedure of parsing an operation command of a new protocol, and the second type microcode can be modified through programming to adapt to a flash bus operation required by a new flash interface standard. An operation command can be parsed by only fixing logics of physical modules in the flash interface controller and reading first type microcode and second type microcode that are related to the operation command. Therefore, various protocols and flash interface standards can be adapted to, and flexibility is good.

Abstract: A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.