Abstract: A connector assembly is provided which includes a first connector having a first housing and a second connector having a second housing. The first housing has two fixed portions positioned apart from one another in the transverse direction, an elastic portion passing between the two fixed portions and able to bend elastically in the longitudinal direction, and an engaging protruding portion formed on the elastic portion and able to be hooked in an engaging hole in the second housing. The engaging protruding portion is positioned between upper and lower edges of the elastic portion.

Abstract: Embodiments of this application provide a data transmission method, a network device, and a terminal. When the method is performed by the terminal, the method includes: obtaining, a time-frequency resource used to transmit uplink data, where the time-frequency resource is at least one time-frequency resource block selected from a plurality of time-frequency resource blocks; each of the time-frequency resource blocks is corresponding to one piece of configuration information; and transmitting, the uplink data on the at least one selected time-frequency resource block based on configuration information of the at least one selected time-frequency resource block. The terminal may select a relatively narrow bandwidth to perform uplink transmission, to increase a transmit power of the terminal. In addition, the terminal performs the uplink transmission based on the corresponding configuration information, to further increase a transmit power.

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to electrostatic discharge clamp structures and methods of manufacture. The structure includes: a network of clamps; sense elements in series with the clamps and configured to sense a turn-on of at least one clamp of the network of clamps; and feedback elements connected to the clamps to facilitate triggering of remaining clamps of the network of clamps.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.

Abstract: The present invention provides a receiver having an input node, a blocker detector, a translational filter and a low-noise amplifier. The input node is arranged to receive an input signal. The blocker detector is configured to detect if the input signal has a blocker to generate a detection result. The translational filter is configured to filter out an output-of-band blocker of the input signal to generate a filtered input signal at the input node or not filter output the output-of-band blocker of the input signal according to the detection result. The low-noise amplifier is configured to receive the filtered input signal or the input signal to generate an amplified input signal.

Abstract: Systems and methods are provided for receiving a notification of an issue with a cloud services application, determining that troubleshooting of the issue comprises review of server logs containing personal data, enabling a data protection and privacy log level instead of a default log level to capture the personal data, generating the one or more server logs containing personal data during replication of the issue based on detecting that the data protection and privacy log level is enabled, indexing the one or more server logs containing personal data and setting access permission to the one or more server logs, detecting that a specified retention time period for the personal data has lapsed, automatically purging the personal data of the one or more server logs based on detecting that the specified retention time period has lapsed, and recording a record that the personal data has been purged.

Abstract: Systems and methods are provided for receiving a notification of an issue with a cloud services application, determining that troubleshooting of the issue comprises review of server logs containing personal data, enabling a data protection and privacy log level instead of a default log level to capture the personal data, generating the one or more server logs containing personal data during replication of the issue based on detecting that the data protection and privacy log level is enabled, indexing the one or more server logs containing personal data and setting access permission to the one or more server logs, detecting that a specified retention time period for the personal data has lapsed, automatically purging the personal data of the one or more server logs based on detecting that the specified retention time period has lapsed, and recording a record that the personal data has been purged.

Abstract: Embodiments of the present invention provide a method for receiving URLLC data from time-frequency resources. The method is applied to a receiving device, the time-frequency resources include eMBB data and the URLLC data, the time-frequency resources further include an OFDM symbol, the OFDM symbol includes an indication resource element RE, the indication RE indicates whether URLLC control information exists in the OFDM symbol, and the method includes: when the indication RE indicates that the URLLC control information exists in the OFDM symbol, detecting the URLLC control information in the OFDM symbol; and receiving the URLLC data based on the detected URLLC control information.

Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.

Abstract: Embodiments of this application provide a flash interface controller and an operation command processing method, and relate to the field of data storage. Programmable first type microcode and second type microcode are introduced to a flash interface controller. The first type microcode can be modified through programming to adapt to a procedure of parsing an operation command of a new protocol, and the second type microcode can be modified through programming to adapt to a flash bus operation required by a new flash interface standard. An operation command can be parsed by only fixing logics of physical modules in the flash interface controller and reading first type microcode and second type microcode that are related to the operation command. Therefore, various protocols and flash interface standards can be adapted to, and flexibility is good.

Abstract: Disclosed is an integrated circuit (IC) structure that incorporates a string of vertical devices. Embodiments of the IC structure include a string of two or more vertical diodes. Other embodiments include a vertical diode/silicon-controlled rectifier (SCR) string and, more particularly, a diode-triggered silicon-controlled rectifier (VDTSCR). In any case, each embodiment of the IC structure includes an N-well in a substrate and, within that N-well, a P-doped region and an N-doped region that abuts the P-doped region. The P-doped region can be anode of a vertical diode and can be electrically connected to the N-doped region (e.g., by a local interconnect or by contacts and metal wiring) such that the vertical diode is electrically connected to another vertical device (e.g., another vertical diode or a SCR with vertically-oriented features). Also disclosed is a manufacturing method that can be integrated with methods of manufacturing vertical field effect transistors (VFETs).

Abstract: Disclosed is an integrated circuit (IC) structure that incorporates a string of vertical devices. Embodiments of the IC structure include a string of two or more vertical diodes. Other embodiments include a vertical diode/silicon-controlled rectifier (SCR) string and, more particularly, a diode-triggered silicon-controlled rectifier (VDTSCR). In any case, each embodiment of the IC structure includes an N-well in a substrate and, within that N-well, a P-doped region and an N-doped region that abuts the P-doped region. The P-doped region can be anode of a vertical diode and can be electrically connected to the N-doped region (e.g., by a local interconnect or by contacts and metal wiring) such that the vertical diode is electrically connected to another vertical device (e.g., another vertical diode or a SCR with vertically-oriented features). Also disclosed is a manufacturing method that can be integrated with methods of manufacturing vertical field effect transistors (VFETs).

Abstract: Silicon-controlled rectifiers, electrostatic discharge circuits, and methods of fabricating a silicon-controlled rectifier for use in an electrostatic discharge circuit. A device structure for the silicon controlled rectifier includes a first well of a first conductivity type in a semiconductor layer, a second well of a second conductivity type in the semiconductor layer, a cathode coupled with the first well, and an anode coupled with the second well. First and second body contacts are coupled with the first well, and the first and second body contacts each have the first conductivity type. A triggering device may be coupled with the first body contact.

Abstract: Field effect diode structures utilize a junction structure that has an L-shape in cross-section (a fin extending from a planar portion). An anode is positioned at the top surface of the fin, and a cathode is positioned at the end surface of the planar portion. The perpendicularity of the fin and the planar portion cause the anode and cathode to be perpendicular to one another. A first gate insulator contacts the fin between the top surface and the planar portion. A first gate conductor contacts the first gate insulator, and the first gate insulator is between the first gate conductor and the surface of the fin. Additionally, a second gate insulator contacts the planar portion between the end surface and the fin. A second gate conductor contacts the second gate insulator, and the second gate insulator is between the second gate conductor and the surface of the planar portion.

Abstract: Methods of integrating a HV ESD PNP bipolar transistor in a VFET process and the resulting devices are provided. Embodiments include forming a DNW region in a portion of a p-sub; forming a HVPDDD region in a portion of the DNW region; forming a first and a second NW in a portion of the DNW region, the second NW between the first NW and the HVPDDD region and laterally separated from the HVPDDD region; forming a PW in a portion of the HVPDDD region; forming an N+ implant in a portion of the first NW and a P+ implant in a portion of the PW; forming a first, a second and a third fin structures over the first and the second NW and the PW, respectively; and forming a N+ S/D, a P+ S/D and a P+ S/D over the first, the second and the third fin structures, respectively.

Abstract: The present disclosure relates to example uplink measurement signal indication methods and apparatuses. One example method includes receiving, by a terminal device, signaling sent by a network device, where the signaling carries indication information that indicates a transmit beam for sending an uplink measurement signal by the terminal device, and sending, by the terminal device, the uplink measurement signal to the network device based on the indication information by using the transmit beam.

Abstract: A network protocol configuration method and apparatus are disclosed. The network protocol configuration apparatus includes: a determining module, configured to determine at least one target function module according to a target network protocol, where the target network protocol is a protocol used for data processing; a configuration module, configured to configure the at least one target function module, where the at least one configured target function module is configured to process data according to the target network protocol; and a processing module, configured to process the data by using the at least one configured target function module. According to the present invention, different types of network protocol processing can be performed on data by using different configurations of a target function module, which can reduce device costs.

Abstract: A protecting and supporting device for an electronic tablet device includes: slideways (2) provided on a left and a right side of the electronic tablet device (1) and a protection housing (3). Sliding rails (4) are provided on both a left side and a right side of the protection housing (3); wherein two slideways are provided between two sliding rails, the left slideway is slidably connected to the sliding rail on the right side of the protection housing by a sliding shaft (5), the right slideway is slidably connected to the sliding rail on the right side of the protection housing by the other sliding shaft, each sliding shaft can slide in the slideway and the sliding rail on the same side; the slideway and the sliding rail on the same side can rotate relative to the sliding shaft on the same side.

Abstract: The invention provides an electrical device, comprising a transformer (22) with a ferrite core (24) and an RF antenna (14). The antenna (14) is electrically isolated from said transformer (22), and a geometric dimension of the antenna (14) has a maximum dimension along or around a surface of the RF antenna (i.e. within the plane of the antenna or around a curved surface defining the antenna), and the RF antenna (14) is spatially spaced from a nearest part of the ferrite core (24) by less than the maximum dimension. This design makes use of the ferrite core of a transformer to provide isolation of the antenna from other parts of the device. This assists in reducing the impact of those parts of the device on the performance of the antenna, in particular the reception range.

Abstract: Provided herein is a rechargeable power source that can be quickly charged and used for charging mobile and cordless devices. The power source includes an ultracapacitor which comprises a composite structure including, for example open graphene structures or graphene nanoribbons attached to an oxide layer. The oxide layer is on a metal foil surface. The oxide layer includes more than one metal atom.