Abstract: An electronic device includes a memory controller and a processor. The memory controller controls access of a memory device. The processor performs a calibration operation to find a first setting range of a memory controller parameter under a first clock frequency of the memory device, to find a second setting range of the memory controller parameter under a second clock frequency of the memory device, and to determine a calibrated setting of the memory controller parameter according to an overlapped range of the first setting range and the second setting range.

Abstract: The present invention relates to hydrogenated block copolymers of vinyl aromatic polymer blocks and conjugated diene polymer blocks having specific molecular weights, compositions, molecular structures and architectures, such that improved processability, mechanical and optical properties are attained. The hydrogenated block copolymer can be further added with different hydrogenated block copolymers to enhance the desired properties.

Abstract: The present invention relates to hydrogenated block copolymers of vinyl aromatic polymer blocks and conjugated diene polymer blocks having specific molecular weights, compositions, molecular structures and architectures, such that improved processability, mechanical and optical properties are attained. The hydrogenated block copolymer can be further added with different hydrogenated block copolymers to enhance the desired properties.

Abstract: An electronic device includes a memory controller and a processor. The memory controller controls access of a memory device. The processor performs a calibration operation to find a first setting range of a memory controller parameter under a first clock frequency of the memory device, to find a second setting range of the memory controller parameter under a second clock frequency of the memory device, and to determine a calibrated setting of the memory controller parameter according to an overlapped range of the first setting range and the second setting range.

Abstract: A measurement device for measuring a blood pressure is provided. The measurement device includes a first sensor, a processor, and a measurement component. The first sensor is used to generate a first sensing signal. The processor receives the first sensing signal and determines whether an event occurs according to the first sensing signal. The measurement component is enabled to measure the blood pressure. When the processor determines that the event occurs, the processor triggers a reminding operation related to enabling of the measurement component.

Abstract: The present disclosure provides a sensor module for simultaneously measuring electrocardiography (ECG) and pulse signal of an object, including: a first electrode having a first surface and an opposite, second surface; a deformable contact sensor having a first surface and an opposite, second surface, wherein the first surfaces of the first electrode and the deformable contact sensor are configured to face toward a region to be measured of the object; a compressible material disposed on at least one of the second surfaces of the first electrode and the deformable contact sensor; and a second electrode operatively connected to the first electrode.

Abstract: A method for performing dynamic configuration includes: freezing a bus between a portion of a dynamic configurable cache and at least one of a plurality of cores/processors by pending a request from the at least one of the cores/processors to the portion of the dynamic configurable cache during a bus freeze period, wherein the plurality of cores/processors are allowed to access the dynamic configurable cache and the at least one of the plurality of cores/processors is allowed to access the portion of the dynamic configurable cache; and adjusting a size of the portion of the dynamic configurable cache, wherein the portion of the dynamic configurable cache is capable of caching/storing information for the at least one of the plurality of cores/processors. An associated apparatus is also provided. In particular, the apparatus includes the plurality of cores/processors, the dynamic configurable cache, and a dynamic configurable cache controller, and can operate according to the method.

Abstract: A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. A first extension line from a first bottom edge intersects with a second extension line from a second bottom edge to form a first base point. A first projection line is formed on the first surface, an extension line of the first projection line intersects with the second bottom edge to form a first intersection point, a second projection line is formed on the first surface, and an extension line of the second projection line intersects with the first bottom edge to form a second intersection point. A zone by connecting the first base point, the first intersection point and the second intersection point is the first anti-stress zone.

Abstract: A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. The second protective layer reveals the first anti-stress zone and comprises a second surface, a first lateral side, a second lateral side and a first connection side. The second surface comprises a second anti-stress zone. An extension line of the first lateral side intersects with an extension line of the second lateral side to form a first intersection point. A zone formed by connecting the first intersection point and two points of the first connection side is the first anti-stress zone. The third protective layer reveals the second anti-stress zone and comprises a second connection side projected on the first surface to form a projection line parallel to the first connection side.

Abstract: A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. The second protective layer reveals the first anti-stress zone and comprises a second surface, a first lateral side, a second lateral side and a first connection side. The second surface comprises a second anti-stress zone. An extension line of the first lateral side intersects with an extension line of the second lateral side to form a first intersection point. A zone formed by connecting the first intersection point and two points of the first connection side is the first anti-stress zone. The third protective layer reveals the second anti-stress zone and comprises a second connection side projected on the first surface to form a projection line parallel to the first connection side.

Abstract: A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. A first extension line from a first bottom edge intersects with a second extension line from a second bottom edge to form a first base point. A first projection line is formed on the first surface, an extension line of the first projection line intersects with the second bottom edge to form a first intersection point, a second projection line is formed on the first surface, and an extension line of the second projection line intersects with the first bottom edge to form a second intersection point. A zone by connecting the first base point, the first intersection point and the second intersection point is the first anti-stress zone.

Abstract: A method for fabricating a carrier with a three-dimensional inductor comprises the steps of providing a substrate having a protective layer; forming a first photoresist layer on the protective layer; patterning the first photoresist layer to form a second opening and a plurality of disposing slots; forming a first metal layer in second opening and disposing slots; removing the first photoresist layer; forming a first dielectric layer on the protective layer; forming a second photoresist layer on the first dielectric layer; patterning the second photoresist layer to form a plurality of slots; forming a second metal layer in slots to form a plurality of inductive portions; removing the second photoresist layer; forming a second dielectric layer on the first dielectric layer; forming a third photoresist layer on the second dielectric layer; patterning the third photoresist layer to form a plurality of slots; and forming a third metal layer in slots.

Abstract: An integrated circuit has a semiconductor layer, at least one metal layer, a plurality of functional circuit blocks formed on the semiconductor layer, and a power mesh formed on the at least one metal layer. The power mesh has a specific area corresponding to a specific functional circuit block of the functional circuit blocks. The specific area at least has a first power trunk of a first power source and a second power trunk of a second power source distributed therein.

Abstract: A clock generator includes a controllable clock source and a frequency hopping controller. The controllable clock source generates a clock signal to a clock-driven device. The frequency hopping controller controls the controllable clock source to make the clock signal have at least one frequency transition from one clock frequency to another clock frequency, wherein the controllable clock source stays in a frequency-locked state during a time period of the at least one frequency transition.

Abstract: A method for performing dynamic configuration includes: freezing a bus between a portion of a dynamic configurable cache and at least one of a plurality of cores/processors by pending a request from the at least one of the cores/processors to the portion of the dynamic configurable cache during a bus freeze period, wherein the plurality of cores/processors are allowed to access the dynamic configurable cache and the at least one of the plurality of cores/processors is allowed to access the portion of the dynamic configurable cache; and adjusting a size of the portion of the dynamic configurable cache, wherein the portion of the dynamic configurable cache is capable of caching/storing information for the at least one of the plurality of cores/processors. An associated apparatus is also provided. In particular, the apparatus includes the plurality of cores/processors, the dynamic configurable cache, and a dynamic configurable cache controller, and can operate according to the method.

Abstract: A method for performing dynamic configuration includes: freezing a bus between a dynamic configurable cache and a plurality of cores/processors by rejecting a request from any of the cores/processors during a bus freeze period, wherein the dynamic configurable cache is implemented with an on-chip memory; and adjusting a size of a portion of the dynamic configurable cache, wherein the portion of the dynamic configurable cache is capable of caching/storing information for one of the cores/processors. An associated apparatus is also provided. In particular, the apparatus includes the plurality of cores/processors, the dynamic configurable cache, and a dynamic configurable cache controller, and can operate according to the method.

Abstract: A semiconductor structure having a first corner includes a carrier, a first protective layer, a second protective layer, and a third protective layer. The carrier comprises a carrier surface having a protection-layered disposing zone. The first protective layer comprises a first surface having a first disposing zone, a first anti-stress zone and a first exposing zone, the first anti-stress zone is located at a corner of the first disposing zone, the second protective layer is disposed at the first disposing zone. The second protective layer comprises a second surface having a second disposing zone, a second anti-stress zone and a second exposing zone, the second anti-stress zone is located at a corner of the second disposing zone. The first anti-stress zone and the second anti-stress zone are located at the first corner. An area of the first anti-stress zone is not smaller than that of the second anti-stress zone.

Abstract: A carrier with three-dimensional capacitor includes a substrate and a three-dimensional capacitor, wherein the substrate comprises a trace layer having a first terminal and a second terminal. The three-dimensional capacitor is integrally formed as one piece with the trace layer. The three-dimensional capacitor and the trace layer are made of same material. The three-dimensional capacitor comprises a first capacitance portion and a second capacitance portion, the first capacitance portion comprises a first section, a second section and a first passage, the second capacitance portion is formed at the first passage. The second capacitance portion comprises a third section, a fourth section and a second passage communicated with the first passage. The first capacitance portion is located at the second passage, a first end of the first capacitance portion connects to the first terminal, and a third end of the second capacitance portion connects to the second terminal.

Abstract: The present invention provides a processing system and associated method; the processing system includes a processing unit, a peripheral unit consuming system resource, a support unit capable of providing the system resource, a buffer capable of storing a portion of the system resource, and a system power manager (SPM). When the processing unit suspends for idle, the peripheral unit consumes the buffer and thus does not need system resource from the support unit, so the support unit and/or the corresponding system resource can be powered down. When the buffer is consumed, the SPM is capable of allocating the system resource for the peripheral unit in response to request of the peripheral unit, so the processing unit does not have to leave idle for allocating the system resource.

Abstract: A carrier with three-dimensional capacitor includes a substrate and a three-dimensional capacitor, wherein the substrate comprises a trace layer having a first terminal and a second terminal. The three-dimensional capacitor is integrally formed as one piece with the trace layer. The three-dimensional capacitor and the trace layer are made of same material. The three-dimensional capacitor comprises a first capacitance portion and a second capacitance portion, the first capacitance portion comprises a first section, a second section and a first passage, the second capacitance portion is formed at the first passage. The second capacitance portion comprises a third section, a fourth section and a second passage communicated with the first passage. The first capacitance portion is located at the second passage, a first end of the first capacitance portion connects to the first terminal, and a third end of the second capacitance portion connects to the second terminal.