Abstract: A semiconductor device includes a source region and a drain region formed in a substrate and having different conductivity types, an insulating film formed between the source region and the drain region, a deep well region formed under the insulating film, and a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region, wherein a depth of a bottom surface of the pinch-off region is different from a depth of a bottom surface of the deep well region.

Abstract: A display system includes (a) a display element having an organic light emitting diode-containing display active area disposed over a silicon backplane, (b) a display driver integrated circuit (DDIC) attached to the display element and electrically connected with the display active area, and (c) a thermal barrier disposed within the silicon backplane, where the thermal barrier is configured to inhibit heat flow through the silicon backplane and into the display active area.

Abstract: The purpose of the present invention is to provide a tube assembly for a tubular heat exchanger and a tubular heat exchanger comprising the same, the tube assembly for a tubular heat exchanger being capable of enhancing efficiency in heat exchange between a heat medium and a combustion gas and also preventing high-temperature oxidation and the burn-out of a turbulator caused by the combustion heat of the combustion gas and preventing the deformation or damage of a tube which may occur in an environment with a high water pressure, thereby improving the durability thereof.

Abstract: In the present disclosure, a seatback pocket is introduced, which includes a backboard combined with a rear side of a seatback and including a hinge shaft provided at a lower end in left and right width directions; a pocket member having a hinge part formed at a lower end and combined with the hinge shaft through a hinge structure to be rotated based on the hinge shaft to provide a pocket space in a region facing the backboard; and an elastic member connected between both ends of the pocket member and the backboard in a shape blocking sides of the pocket space, and configured to provide an elastic restoring force with respect to a rotation direction of the pocket member.

Abstract: A semiconductor device includes a source region and a drain region formed in a substrate and having different conductivity types, an insulating film formed between the source region and the drain region, a deep well region formed under the insulating film, and a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region, wherein a depth of a bottom surface of the pinch-off region is different from a depth of a bottom surface of the deep well region.

Abstract: Provided are a semiconductor device, a method of manufacturing the same, and a method of forming a uniform doping concentration of each semiconductor device when manufacturing a plurality of semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable by using ion blocking patterns to provide a semiconductor device with uniform doping concentration and a higher breakdown voltage obtainable as a result of such doping.

Abstract: A novel compound having excellent light emission and heat stability is disclosed. Also disclosed is an organic electroluminescent device having properties such as light emitting efficiency, an operation voltage, and a service life improved by including the compound in at least one organic layer of the device.

Abstract: Provided are a semiconductor device, a method of manufacturing the same, and a method of forming a uniform doping concentration of each semiconductor device when manufacturing a plurality of semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable by using ion blocking patterns to provide a semiconductor device with uniform doping concentration and a higher breakdown voltage obtainable as a result of such doping.

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

Abstract: The present disclosure relates to a novel compound, and an organic electroluminescent device including the same, and by using the compound according to the present disclosure in an organic material layer, preferably a light emitting layer or an auxiliary light emitting layer, of an organic electroluminescent device, light emission efficiency, a driving voltage, a lifetime and the like of the organic electroluminescent device may be enhanced.

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

Abstract: A semiconductor package is provided. The semiconductor package includes a first substrate, a first semiconductor chip arranged on the first substrate, a first group of at least one solder ball arranged on a side surface of the first semiconductor chip, an interposer arranged on the first semiconductor chip and the first substrate and being in contact with the first group of at least one solder ball, and an adhesive layer arranged between the first semiconductor chip and the interposer and configured to expose at least a portion of un upper surface of the first semiconductor chip, wherein a first height from an upper surface of the first substrate to the upper surface of the first semiconductor chip is greater than a second height of the first group of at least one solder ball.

Abstract: The present disclosure relates to a novel organic compound which has excellent thermal stability, electron transporting ability, and light emitting ability, and to an organic EL device containing the same. As the organic compound is used in an organic material layer of the organic EL device, the thermal stability, luminous efficiency, driving voltage, and life of the device can be improved.

Abstract: A semiconductor package includes a package substrate, a flip chip coupled to the package substrate, an interposer stacked on the flip chip and including a first terminal and a second terminal at an upper surface thereof, a bonding wire which connects the first terminal and the package substrate and a mold layer which covers the interposer, the flip chip and the bonding wire. The mold layer has a signal hole which exposes the second terminal, and at least one dummy hole spaced apart from the signal hole on an upper surface of the interposer.

Abstract: The present invention relates to a novel enzyme capable of producing multi-hydroxy derivatives from polyunsaturated fatty acids and a method for producing multi-hydroxy derivatives of polyunsaturated fatty acids using the same.

Abstract: An image sensor package includes a substrate, an image sensor chip disposed on the substrate, and an external force absorbing layer disposed between the substrate and the image sensor chip and having a first surface and a second surface opposite to the first surface. The image sensor package further includes an adhesive layer configured to bond the second surface of the external force absorbing layer to the substrate. The adhesive layer has a first modulus, and the external force absorbing layer has a second modulus different from the first modulus.

Abstract: A single poly multi time program (MTP) cell includes a second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source; a control gate connected to the sensing gate of the sensing transistor, and a control gate electrode, wherein the sensing transistor, the drain electrode, the source electrode, the control gate, and the control gate electrode are located on the second conductivity-type well.

Abstract: Described is a semiconductor device including a first N-type well region disposed in a substrate and a second N-type well region in contact with the first N-type well region, a source region disposed in the first N-type well region, a drain region disposed in the second N-type well region, and a first gate electrode and a second gate electrode disposed spaced apart from the drain region. A maximum vertical length of the source region in a direction vertical to the first or second gate electrode is greater than a maximum vertical length of the drain region in the direction in a plan view.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Abstract: An image sensor package includes a substrate, an image sensor chip disposed on the substrate, and an external force absorbing layer disposed between the substrate and the image sensor chip and having a first surface and a second surface opposite to the first surface. The image sensor package further includes an adhesive layer configured to bond the second surface of the external force absorbing layer to the substrate. The adhesive layer has a first modulus, and the external force absorbing layer has a second modulus different from the first modulus.