Patents by Inventor Young Bae Kim

Young Bae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9858742
    Abstract: The present invention relates to an ultrasonic sensor for detecting double sheets and a method of detecting double sheets using the same, in which in configuring the ultrasonic sensor for detecting double sheets of banknotes passing through a transfer path, the ultrasonic sensor is configured to include an ultrasonic wave generator and an ultrasonic wave receiver provided in pair to face each other in a direction perpendicular to a transfer direction of the banknotes with the transfer path for transferring the banknotes interposed therebetween, and periodicity of a reception signal detected by the ultrasonic wave receiver is determined to detect whether a zero sheet, a single sheet or double sheets of the banknotes pass through the transfer path according to generation or not of the periodic signal and/or a frequency of the generation.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: January 2, 2018
    Assignee: Nautilus Hyosung Inc.
    Inventor: Young Bae Kim
  • Publication number: 20170307252
    Abstract: Provided is a hot water barrel structure for a water dispenser, the hot water barrel structure including: a hot water barrel having a water reservoir therein; a partition plate provided in the hot water barrel and dividing the water reservoir into an upper water reservoir part and a lower water reservoir part; an inlet pipe supplying water that is to be heated to the lower water reservoir part of the hot water barrel; a heater provided at the hot water barrel and heating water introduced to the lower water reservoir part to produce hot water; and a hot water pipe provided at the upper water reservoir part of the hot water barrel.
    Type: Application
    Filed: December 8, 2016
    Publication date: October 26, 2017
    Inventors: Young Bong KIM, Young Bae KIM
  • Publication number: 20170301668
    Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.
    Type: Application
    Filed: January 30, 2017
    Publication date: October 19, 2017
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Young Bae KIM, Kwang Il KIM, Jun Hyun KIM, In Sik JUNG, Jae Hyung JANG, Jin Yeong SON
  • Patent number: 9741844
    Abstract: Provided is a semiconductor power device. The semiconductor power device includes a well disposed in a substrate, a gate overlapping the well, a source region disposed at one side of the gate, a buried layer disposed in the well, and a drain region or a drift region contacting the buried layer.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: August 22, 2017
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Young Bae Kim, Jin Woo Moon, Francois Hebert
  • Patent number: 9691477
    Abstract: A resistive memory system having a plurality of memory cells includes a memory device having a resistive memory cell array and a controller. The controller generates write data to be written to the memory cell array by encoding input data such that the input data corresponds to an erase state and a plurality of programming states that a memory cell may have. The input data is encoded such that at least one of the number of memory cells assigned a first programming state and the number of memory cells assigned a second programming state is smaller than at least one of the numbers of memory cells in the erase state and the other programming states. The first programming state has a highest resistance level among the plurality of programming states, and the second programming state has a second highest resistance level among the plurality of programming states.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: June 27, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun Chu Oh, Jun Jin Kong, Young Bae Kim, Hong Rak Son, Pil Sang Yoon, Han Shin Shin
  • Patent number: 9669597
    Abstract: A glass film laminate includes a carrier glass including a rough surface, a smooth surface surrounding the rough surface, the rough surface having a relatively large surface roughness and the smooth surface having a relatively small surface roughness, and a passage rough surface connected to the rough surface; and a glass film laminated on the rough surface and the smooth surface of the carrier glass.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: June 6, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Bae Kim, Jong-Seong Kim, Jong-Hwan Lee
  • Patent number: 9632337
    Abstract: A manufacturing device for a liquid crystal display panel includes a stage including a first stage part and second stage part. The stage is configured to support a substrate laminate. A knife includes an entrance portion and a rigidity securing portion. The knife is configured to peel a support substrate of the substrate laminate. The stage is configured to rotate in a direction parallel with a surface of the stage. The rigidity securing portion of the knife is thicker than an entrance portion of the knife.
    Type: Grant
    Filed: July 21, 2014
    Date of Patent: April 25, 2017
    Assignees: SAMSUNG DISPLAY CO., LTD., TOPTEC CO., LTD.
    Inventors: Kwang Ho Lee, Young Bae Kim, Hyeok Yun Kwon, Sang Il Kim, Jong Seong Kim
  • Publication number: 20170084496
    Abstract: Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.
    Type: Application
    Filed: December 7, 2016
    Publication date: March 23, 2017
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Young Bae KIM, Kwang Il KIM
  • Patent number: 9548203
    Abstract: Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: January 17, 2017
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Young Bae Kim, Kwang Il Kim
  • Publication number: 20160355104
    Abstract: A folding seat actuator may include a wire configured to be coupled to a seat back or a seat cushion, a coiling gear connected to the wire configured to fold a seat by winding the wire around the coiling gear when the coiling gear is rotated, a reduction gear interlocked with the coiling gear to rotate the coiling gear, a power source for providing rotational force to the reduction gear, and an elastic body for providing rotational force to the reduction gear such that the reduction gear is restored to a set position after rotating by the power source.
    Type: Application
    Filed: November 19, 2015
    Publication date: December 8, 2016
    Applicants: Hyundai Motor Company, Daedong Movel System Co., Ltd.
    Inventors: Young Dong KIM, Sang Ho Kim, Sang Soo Lee, Yun Soo Kim, Myoung Soo Chang, Yeong Sik Joo, Heung Suk Yang, Young Gu Kang, Young Bae Kim
  • Publication number: 20160351825
    Abstract: The present disclosure relates to a novel compound and an organic electroluminescent element including the same, and the compound according to the present disclosure is used for an organic material layer of the organic electroluminescent element, thereby improving the light emitting efficiency, driving voltage, lifetime, and the like of the organic electroluminescent element.
    Type: Application
    Filed: December 16, 2014
    Publication date: December 1, 2016
    Applicant: DOOSAN CORPORATION
    Inventors: Young Bae KIM, Hyunjong JO, Chang Jun LEE, Jinyong SHIN, Hoe Moon KIM, Youngmi BEAK, Tae Hyung KIM
  • Publication number: 20160343660
    Abstract: A wiring structure includes a substrate, a lower insulation layer on the substrate, a lower wiring in the lower insulation layer, a first etch-stop layer covering the lower wiring and including a metallic dielectric material, a second etch-stop layer on the first etch-stop layer and the lower insulation layer, an insulating interlayer on the second etch-stop layer, and a conductive pattern extending through the insulating interlayer, the second etch-stop layer and the first etch-stop layer and electrically connected to the lower wiring.
    Type: Application
    Filed: March 17, 2016
    Publication date: November 24, 2016
    Inventors: Jun-Jung KIM, Young-Bae KIM, Jong-Sam KIM, Jin-Hyeung PARK, Jeong-Hoon AHN, Hyeok-Sang OH, Kyoung-Woo LEE, Hyo-Seon LEE, Suk-Hee JANG
  • Publication number: 20160322583
    Abstract: The present disclosure provides an organic electroluminescent device including: an anode; a cathode; and one or more organic material layers interposed between the anode and cathode and selected from the group consisting of a hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injection layer, and further including a lifetime enhancement layer (LEL) between the light emitting layer and the electron transporting layer.
    Type: Application
    Filed: December 26, 2014
    Publication date: November 3, 2016
    Applicant: DOOSAN CORPORATION
    Inventors: Tae Hyung KIM, HoCheol PARK, Young Bae KIM, Chang Jun LEE, Eunjung LEE, Youngmi BEAK
  • Patent number: 9484087
    Abstract: In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: November 1, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-bum Lee, Chang-jung Kim, Young-bae Kim, Myoung-jae Lee, Dong-soo Lee, Man Chang, Seung-ryul Lee, Kyung-min Kim
  • Publication number: 20160293758
    Abstract: The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples are able to control a pinch-off feature of the junction transistor while also maintaining electric features of the high voltage transistor by forming a groove on a lower part of a first conductivity type deep-well region located on a channel region of the junction transistor in a channel width direction.
    Type: Application
    Filed: November 16, 2015
    Publication date: October 6, 2016
    Applicant: MAGNACHIP SEMICONDUCTOR, LTD.
    Inventors: Young Bae KIM, Kwang Il KIM
  • Publication number: 20160240252
    Abstract: A resistive memory system having a plurality of memory cells includes a memory device having a resistive memory cell array and a controller. The controller generates write data to be written to the memory cell array by encoding input data such that the input data corresponds to an erase state and a plurality of programming states that a memory cell may have. The input data is encoded such that at least one of the number of memory cells assigned a first programming state and the number of memory cells assigned a second programming state is smaller than at least one of the numbers of memory cells in the erase state and the other programming states. The first programming state has a highest resistance level among the plurality of programming states, and the second programming state has a second highest resistance level among the plurality of programming states.
    Type: Application
    Filed: February 12, 2016
    Publication date: August 18, 2016
    Inventors: EUN CHU OH, JUN JIN KONG, YOUNG BAE KIM, HONG RAK SON, PIL SANG YOON, HAN SHIN SHIN
  • Publication number: 20160226000
    Abstract: An organic light-emitting device includes: a first electrode; a second electrode opposite the first electrode; an emission layer between the first electrode and the second electrode; a hole transport region between the first electrode and the emission layer; and an electron transport region between the emission layer and the second electrode, the electron transport region including an electron control layer, wherein the hole transport region includes at least one compound selected from a first compound represented by Formula 1 and a second compound represented by Formula 2, and the electron control layer includes a third compound represented by Formula 3:
    Type: Application
    Filed: January 29, 2016
    Publication date: August 4, 2016
    Inventors: Myeong-Suk Kim, Sung-Wook Kim, Hwan-Hee Cho, Sang-Woo Lee, Chang-Woong Chu, Tae-Hyung Kim, Ho-Cheol Park, Chang-Jun Lee, Young-Bae Kim, Hoe-Moon Kim
  • Publication number: 20160181351
    Abstract: An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a resistor of polysilicon. The insulator has a structure that is able to withstand an ultrahigh voltage, and thereby allows the manufacture of a semiconductor device resistor that can bear an ultrahigh voltage without increasing the size of a semiconductor substrate and a semiconductor device including such a resistor. Other examples provide a method for manufacturing such a semiconductor device.
    Type: Application
    Filed: November 18, 2015
    Publication date: June 23, 2016
    Applicant: Magnachip Semiconductor, Ltd.
    Inventors: Kwang Il KIM, Young Bae KIM
  • Publication number: 20160141369
    Abstract: Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.
    Type: Application
    Filed: May 22, 2015
    Publication date: May 19, 2016
    Applicant: MAGNACHIP SEMICONDUCTOR, LTD.
    Inventors: Young Bae KIM, Kwang Il KIM
  • Publication number: 20160118273
    Abstract: A method of manufacturing a semiconductor package includes providing a package substrate, arranging a plurality of semiconductor devices in an array pattern on an upper surface of the package substrate and electrically connecting the plurality of semiconductor devices to the package substrate, and forming a molding member on the upper surface of the package substrate to cover the semiconductor chips. The molding member includes a warpage-preventing portion configured to prevent or reduce a warpage of the package substrate. The warpage-preventing portion may be raised above a top surface of a base portion of the molding member.
    Type: Application
    Filed: August 12, 2015
    Publication date: April 28, 2016
    Inventors: Yun-Hee CHO, Young-Bae KIM