Abstract: The purpose of the present invention is to provide a tube assembly for a tubular heat exchanger and a tubular heat exchanger comprising the same, the tube assembly for a tubular heat exchanger being capable of enhancing efficiency in heat exchange between a heat medium and a combustion gas and also preventing high-temperature oxidation and the burn-out of a turbulator caused by the combustion heat of the combustion gas and preventing the deformation or damage of a tube which may occur in an environment with a high water pressure, thereby improving the durability thereof.

Abstract: A single poly multi time program (MTP) cell includes a second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source; a control gate connected to the sensing gate of the sensing transistor, and a control gate electrode, wherein the sensing transistor, the drain electrode, the source electrode, the control gate, and the control gate electrode are located on the second conductivity-type well.

Abstract: An image sensor package includes a substrate, an image sensor chip disposed on the substrate, and an external force absorbing layer disposed between the substrate and the image sensor chip and having a first surface and a second surface opposite to the first surface. The image sensor package further includes an adhesive layer configured to bond the second surface of the external force absorbing layer to the substrate. The adhesive layer has a first modulus, and the external force absorbing layer has a second modulus different from the first modulus.

Abstract: An integrated circuit (IC) device includes a lower wiring structure including a lower metal film. The lower wiring structure penetrates at least a portion of a first insulating film disposed over a substrate. The IC device further includes a capping layer covering a top surface of the lower metal film, a second insulating film covering the capping layer, an upper wiring structure penetrating the second insulating film and the capping layer, and electrically connected to the lower metal film, and an air gap disposed between the lower metal film and the second insulating film. The air gap has a width defined by a distance between the capping layer and the upper wiring structure.

Abstract: A folding seat actuator may include a wire configured to be coupled to a seat back or a seat cushion, a coiling gear connected to the wire configured to fold a seat by winding the wire around the coiling gear when the coiling gear is rotated, a reduction gear interlocked with the coiling gear to rotate the coiling gear, a power source for providing rotational force to the reduction gear, and an elastic body for providing rotational force to the reduction gear such that the reduction gear is restored to a set position after rotating by the power source.

Abstract: A wiring structure includes a substrate, a lower insulation layer on the substrate, a lower wiring in the lower insulation layer, a first etch-stop layer covering the lower wiring and including a metallic dielectric material, a second etch-stop layer on the first etch-stop layer and the lower insulation layer, an insulating interlayer on the second etch-stop layer, and a conductive pattern extending through the insulating interlayer, the second etch-stop layer and the first etch-stop layer and electrically connected to the lower wiring.

Abstract: An organic light-emitting device includes: a first electrode; a second electrode opposite the first electrode; an emission layer between the first electrode and the second electrode; a hole transport region between the first electrode and the emission layer; and an electron transport region between the emission layer and the second electrode, the electron transport region including an electron control layer, wherein the hole transport region includes at least one compound selected from a first compound represented by Formula 1 and a second compound represented by Formula 2, and the electron control layer includes a third compound represented by Formula 3:

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Abstract: Described is a semiconductor device including a first N-type well region disposed in a substrate and a second N-type well region in contact with the first N-type well region, a source region disposed in the first N-type well region, a drain region disposed in the second N-type well region, and a first gate electrode and a second gate electrode disposed spaced apart from the drain region. A maximum vertical length of the source region in a direction vertical to the first or second gate electrode is greater than a maximum vertical length of the drain region in the direction in a plan view.

Abstract: The present disclosure relates to a novel compound, and an organic electroluminescent device including the same, and by using the compound according to the present disclosure in an organic material layer, preferably a light emitting layer or an auxiliary light emitting layer, of an organic electroluminescent device, light emission efficiency, a driving voltage, a lifetime and the like of the organic electroluminescent device may be enhanced.

Abstract: A high voltage semiconductor device includes a first region, a second region, and an interconnection region. The first region includes a Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) device. The LDMOS device includes an N-type high-concentration source region; a P-type high-concentration pick-up region, wherein the N-type high-concentration source region and the P-type high-concentration pick-up region are formed in a first P-type body region; a drain region; and a P-type buried doping layer formed below a bottom surface of an insulation layer. The second region includes a second body region; a P-type first highly doped region and a P-type second highly doped region, wherein the P-type first highly doped region and the P-type second highly doped region are formed in the second body region; a N-type third highly doped region; and a second buried doping region. The interconnection region connects the first region to the second region.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate, a first gate electrode formed on the thick gate insulating layer, a first spacer formed on the thin buffer insulating layer, and a source region and a drain region formed in the substrate.

Abstract: An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a resistor of polysilicon. The insulator has a structure that is able to withstand an ultrahigh voltage, and thereby allows the manufacture of a semiconductor device resistor that can bear an ultrahigh voltage without increasing the size of a semiconductor substrate and a semiconductor device including such a resistor. Other examples provide a method for manufacturing such a semiconductor device.

Abstract: The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples are able to control a pinch-off feature of the junction transistor while also maintaining electric features of the high voltage transistor by forming a groove on a lower part of a first conductivity type deep-well region located on a channel region of the junction transistor in a channel width direction.

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

Abstract: An integrated circuit (IC) device includes a lower wiring structure including a lower metal film. The lower wiring structure penetrates at least a portion of a first insulating film disposed over a substrate. The IC device further includes a capping layer covering a top surface of the lower metal film, a second insulating film covering the capping layer, an upper wiring structure penetrating the second insulating film and the capping layer, and electrically connected to the lower metal film, and an air gap disposed between the lower metal film and the second insulating film. The air gap has a width defined by a distance between the capping layer and the upper wiring structure.

Abstract: The present invention relates to a novel indole-based compound having superior hole injection and transport capabilities, light-emitting capabilities, and the like, and an organic electroluminescent device which comprises the indole-based compound in one or more organic layers thereof so as to thereby achieve improved characteristics, such as light-emitting efficiency, driving voltage, and lifespan characteristics.

Abstract: The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples are able to control a pinch-off feature of the junction transistor while also maintaining electric features of the high voltage transistor by forming a groove on a lower part of a first conductivity type deep-well region located on a channel region of the junction transistor in a channel width direction.

Abstract: The present disclosure relates to a novel compound and an organic electroluminescent element including the same, and the compound according to the present disclosure is used for an organic material layer of the organic electroluminescent element, thereby improving the light emitting efficiency, driving voltage, lifetime, and the like of the organic electroluminescent element.

Abstract: The present examples relate to a junction field effect transistor (JFET) that shares a drain with a high voltage field effect transistor. The present examples are able to control a pinch-off feature of the junction transistor while also maintaining electric features of the high voltage transistor by forming a groove on a lower part of a first conductivity type deep-well region located on a channel region of the junction transistor in a channel width direction.