Abstract: Memory devices and methods of operating the same. A memory cell of a memory device may include a ferroelectric layer and a semiconductor layer bonded to each other. The ferroelectric layer may be of a p-type and the semiconductor layer may be of an n-type. The memory cell may have a switching characteristic due to a depletion region that exists in a junction between the ferroelectric layer and the semiconductor layer. The memory device may be a device writing data using a polarization change of the ferroelectric layer.

Abstract: In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current.

Abstract: A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.

Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.

Abstract: Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer.

Abstract: The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate insulating layer surrounding, the gate and electrically insulating the gate from the channel layer, the source, and the drain, and a variable resistance material layer between the insulating substrate and the gate.

Abstract: In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer.

Abstract: Disclosed is an apparatus for recovering an acrylic acid from a mixture containing acrylic acid, acrylic acid dimer and impurities with high boiling point, including: an acrylic acid recovering device that comprises an acrylic acid distillation unit being present within an acrylic acid dimer pyrolysis tank, and is operated under reduced pressure; a separation column for removing impurities with high boiling point from the mixture which is introduced into the acrylic acid recovering device; and a line for introducing the mixture into the acrylic acid recovering device.

Abstract: According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.

Abstract: The present invention provides a (meth)acrylic acid collecting method for collecting a (meth)acrylic acid from a mixed gas that includes an organic byproduct, a steam, and a (meth)acrylic acid that are generated in a production reaction of the (meth)acrylic acid, which includes the steps of a) contacting the mixed gas that includes the organic byproduct, the steam, and the (meth)acrylic acid with a (meth)acrylic acid absorption solvent to obtain a gas that includes the organic byproduct and the steam and the (meth)acrylic acid containing solution while the gas and the (meth)acrylic acid containing solution are separated from each other; b) contacting the gas that includes the organic byproduct and the steam that are obtained in the step a with the organic byproduct absorption solvent to obtain the gas that includes the steam and the organic byproduct containing solution while the gas and the organic byproduct containing solution are separated from each other; c) supplying the gas that includes the steam that

Abstract: Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device.

Abstract: A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.

Abstract: The present invention provides an apparatus and method for generating an electric discharge in a liquid using a gas jet, in which a gas channel is formed between conductive members in a liquid using high pressure gas jet injection to reduce a discharge voltage in the liquid to a level similar to that in air, thus facilitating the electric discharge in the liquid.

Abstract: A diode structure includes: a lower electrode and an insulating layer disposed on the lower electrode. The insulating layer includes aperture exposing a portion of the lower electrode. The diode structure further includes: a first layer and a second layer. The first layer is disposed in the aperture and having a depressed portion. The second layer is disposed in the depressed portion of the first layer. A resistive random access memory (RRAM) device includes the above-described diode structure.

Abstract: The present invention relates to device and method for injection molding a product having a hydrophobic pattern, which permits mass production of the product having a hydrophobic surface and clear formation of the hydrophobic pattern on the product. The method includes the steps of heating a mold having a stamper with a hydrophobic pattern formed thereon mounted thereto, bringing the mold into close contact with other molds for enclosing an inside of the molds, injecting a predetermined resin material into the inside of the molds, and cooling down the molds, and separating the molds.

Abstract: Disclosed is a shell-and-tube heat exchanger type reactor that can be used for a process of producing unsaturated acids from olefins via fixed-bed catalytic partial oxidation, which comprises at least one reaction tube, each including at least one first-step catalyst layer, in which olefins are oxidized by a first-step catalyst to mainly produce unsaturated aldehydes, and at least two second-step catalyst layers, in which the unsaturated aldehydes are oxidized by a second-step catalyst to produce unsaturated acids, wherein a first catalyst layer of the second-step catalyst layers, disposed right adjacent to the first-step catalyst layer, has an activity corresponding to 5˜30% of the activity of the catalyst layer having a highest activity among the second-step catalyst layers. A method of producing unsaturated acids from olefins by using the reactor is also disclosed.

Abstract: A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.

Abstract: Disclosed are a fixing structure of insulation panels and a prefabricated refrigerator with the same. The fixing structure of insulation panels includes a recess recessed on one surface of a first insulation panel having an insulation portion inside a casing, and a protrusion formed to be inserted into the recess, on one surface of a second insulation panel having an insulation portion inside a casing, wherein the insulation portions of nonmetal material are exposed to a bottom of the recess and a front end of the protrusion so as to shield a transmission path of heat flowed along a casing contact surface of the insulation panels, thereby improving insulation efficiency.

Abstract: Nonvolatile memory elements may include a first electrode, a second electrode, a first buffer layer, a second buffer layer and a memory layer. The memory layer may be between the first and second electrodes. The first butter layer may be between the memory layer and the first electrode. The second buffer layer may be between the memory layer and the second electrode. The memory layer may be a multi-layer structure including a first material layer and a second material layer. The first material layer may include a first metal oxide which is of the same group as, or a different group from, a second metal oxide included in the second material layer.

Abstract: Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.