Abstract: A semiconductor device includes a first phase detector for detecting a phase of a second clock by comparing the phase of the second clock with the phase of the first clock, a second phase detector for detecting a phase of a clock obtained by delaying the second clock by a set delay amount, a third phase detector for detecting the phase of the second clock by delaying the first clock by the set delay amount, and a phase difference detection signal generator for setting a logic level of a phase difference detection signal corresponding to a phase difference between the first and second clocks detecting that the phase of the first or second clock is changed, and change the logic level of the phase difference detection signal.

Abstract: A data input device of a semiconductor memory apparatus includes: a differential amplifier configured to compare an input to a reference voltage and output a differential signal based on the comparison; and a control circuit configured to adjust a current driving capacity of the differential amplifier by turning on a first current path connected to the differential amplifier in response to a first enable signal and turning off a second current path connected to the differential amplifier in response to a second enable signal in a standby mode, wherein, during a time that a plurality of external command signals toggle back and forth between a status of all being high signals and a status of all being low signals repeatedly, the second enable signal is controlled to be maintained at a low state signal.

Abstract: A semiconductor memory device includes a read circuit configured to sequentially output a plurality of compressed data corresponding to all banks which are to be tested in response to a plurality of bank addresses and a read enable signal during a test mode and a pad configured to transfer the compressed data which are sequentially outputted from the read circuit to an outside of the semiconductor memory device.

Abstract: Semiconductor device and semiconductor memory device include a plurality of internal circuits configured to perform test operations in response to their respective test mode signals and a plurality of test-mode control units configured to control the test operations of the internal circuits to be disabled in response to a test-off signal.

Abstract: Provided is a 3D stacked semiconductor integrated circuit including a plurality of chips coupled through a plurality of TSVs. A first chip among the plurality of chips is configured to detect and repair a defective TSV among the plurality of TSVs, and transmit repair information to remaining chips other than the first chip, and the remaining chips other than the first chip are configured to repair the defective TSV in response to the repair information.

Abstract: Various embodiments of a three-dimensional, stacked semiconductor integrated circuit are disclosed. In one exemplary embodiment, the circuit may include a master slice, a plurality of slave slices, and a plurality of through-silicon vias for connecting the master slice to the plurality of slave slices. At least one of the plurality of through-silicon vias may be configured to transmit an operation control signal from the master slice to the plurality of slave slices. The at least one of the plurality of through-silicon vias is configured to be shared by the plurality of slave slices.

Abstract: A semiconductor circuit includes a data driving circuit configured to change a slew rate in response to a control signal and drive data at a changed slew rate, a core/peripheral circuit block configured to provide the data to the data driving circuit, and a channel/memory module information setting unit configured to set the control signal according to channel/memory module information.

Abstract: A semiconductor integrated circuit includes a first semiconductor chip including a first output circuit which is enabled in a first operation mode and outputs a first output signal and a second output circuit which is enabled in a second operation mode and outputs a second output signal; a second semiconductor chip including a first input circuit which is enabled in the first operation mode and receives the first output signal and a second input circuit which is enabled in the second operation mode and receives the second output signal; and a common through chip via arranged to vertically penetrate through the semiconductor chip, be coupled with the first and second output circuits in one end and coupled with the first and second input circuits in the other end, and interface transfer of the first and second output signals which are enabled in different operation modes, including the first and second operation modes.

Abstract: Semiconductor device and semiconductor memory device include a plurality of internal circuits configured to perform test operations in response to their respective test mode signals and a plurality of test-mode control units configured to control the test operations of the internal circuits to be disabled in response to a test-off signal.

Abstract: A semiconductor memory device includes a delay locked loop for achieving a delay locked state by correcting a phase difference between a reference clock and an internal delayed clock and for indicating the state that a larger delay amount than a maximum delay amount of a delay line is required, or a smaller delay amount than a minimum delay amount of delay line is required. A control unit resets the delay locked loop according to the state of the delay line.

Abstract: A data transmission device in a semiconductor memory apparatus receives input data via a local data input/output line and output s the input data on a plurality of global data input/output lines. The data transmission device includes a write data generation block configured to receive the input data and test data and output one of input data and test data as write data in response to an activation of a test enable signal, and a loading block configured to apply the write data to one of the plurality of global data input/output lines in response to an enable signal.

Abstract: A semiconductor device includes a delay line configured to delay a source clock by a delay equal to a first number of delay units in response to a delay control code and to generate a delayed source clock; a delay amount sensing unit configured to sense whether the delay amount of the delay line reaches a delay amount limit; a clock cycle measuring unit configured to measure the cycle of the source clock by counting a sampling clock in response to an output signal of the delay amount sensing unit, wherein a cycle of the sampling clock is equal to a second number of delay units; and a delay amount controlling unit configured to change the delay amount of the delay line in response to the measured cycle of the source clock as determined from an output signal of the clock cycle measuring unit.

Abstract: A semiconductor memory device is capable of controlling a delay locked loop appropriately based on operation modes, particularly in a fast power-down mode to reduce an amount of current maximumly. The semiconductor memory device includes a delay-locked clock signal generating unit, a mode signal generating unit, and a delay locking control unit. The delay-locked clock signal generating unit performs a delay locking operation on a clock signal, thereby generating a delay-locked clock signal. The mode signal generating unit enables a fast precharge power-down mode signal in a fast precharge power-down mode. The delay locking control unit controls the delay-locked clock signal generating unit to be activated in a predetermined cycle in response to the fast precharge power-down mode signal.

Abstract: A semiconductor memory apparatus includes a clock transmission unit configured to selectively output a data strobe clock signal or a phase correction clock signal based on an operation mode, and a data latch unit configured to latch a plurality of data signals under a control of a clock signal which is outputted from the clock transmission unit.

Abstract: Semiconductor device and semiconductor memory device include a plurality of internal circuits configured to perform test operations in response to their respective test mode signals and a plurality of test-mode control units configured to control the test operations of the internal circuits to be disabled in response to a test-off signal.

Abstract: A duty cycle corrector includes a delay unit configured to adjust an input clock and an inverted input clock with a delay value controlled in response to one or more control signals and to generate a positive clock and a negative clock, and a duty detector configured to receive the positive clock and the negative clock, to detect duty ratios of the positive clock and the negative clock and to generate the one or more control signals.

Abstract: A repair circuit of a semiconductor apparatus includes a transmission control unit configured to generate first through nth (n is an integer equal to or greater than 2) control signals in response to a repair information signal, and enable all mth through nth control signals when the repair information signal indicating an mth (m is an integer equal to or greater than 1 and equal to or less than n) TSV is inputted; transmission units configured to allocate transmission paths for first through nth signals to first through nth TSVs and a repair TSV in response to the first through nth control signals; and receiving units configured to receive the signals transmitted from the first through nth TSVs and the repair TSV in response to the first through nth control signals.

Abstract: A data transmission circuit includes a data transmission unit and a data receiving unit. The data transmission unit generates transmission data based on first chip data and transmit the transmission data via a Through Silicon Via (TSV). The data receiving unit differentially amplifies the transmission data with respect to a reference voltage to generate second chip data.

Abstract: A register controlled DLL circuit occupies a relatively small area in a semiconductor device by reducing the number of flip-flops for generating timing pulses that are used to control a DLL operation and sequentially toggled. The registered controlled DLL circuit for generating a DLL clock by delaying internal clocks includes a timing pre-pulse generating unit configured to generate a plurality of timing pre-pulses activated sequentially in response to a source clock, the plurality of pre-pulses being repeated two or more times in each delay shifting update period, a mask signal generating unit configured to generating a mask signal having a logic level varied according to toggling of a predetermined one of the timing pre-pulses, and a timing pulse outputting unit configured to output the plurality of timing pre-pulses as a plurality of timing pulses in response to the mask signal.

Abstract: A circuit for testing a semiconductor apparatus includes a test voltage applying unit configured to apply a test voltage to a first end of a through-silicon via (TSV) in response to a test mode signal and a detecting unit configured to be connected to a second end of the TSV and detect a current outputted from the second end of the TSV.