Abstract: A semiconductor device includes a synthesis control signal generation circuit and a data output control circuit. The synthesis control signal generation circuit generates a synthesis control signal for determining a burst sequence from a latch control signal in response to a first burst mode command and a second burst mode command. The data output control circuit outputs data included in a bank group as internal data in response to the synthesis control signal.

Abstract: A semiconductor device includes a strobe signal generation circuit. The strobe signal generation circuit generates a strobe signal which is toggled in synchronization with a multiplication clock signal during enablement periods of a toggling drive signal and a down drive signal. A postamble period is set according to the toggling drive signal and the down drive signal.

Abstract: A semiconductor device may include a first buffer, a second buffer, a divider circuit and an internal signal generation circuit. The first buffer may buffer a first input signal and a second input signal to generate a first data strobe buffering signal and a first data strobe bar buffering signal. The second buffer may generate a second data strobe buffering signal based on the first input signal and a reference voltage. The divider circuit may divide the second data strobe buffering signal to generate a divided signal and a divided bar signal. The internal signal generation circuit may be configured to generate a first to fourth data latch timing signals having different phases based on the first data strobe buffering signal, the first data strobe bar buffering signal, the divided signal and the divided buffering signal.

Abstract: A semiconductor device may include a first buffer, a second buffer, a divider circuit and an internal signal generation circuit. The first buffer may buffer a first input signal and a second input signal to generate a first data strobe buffering signal and a first data strobe bar buffering signal. The second buffer may generate a second data strobe buffering signal based on the first input signal and a reference voltage. The divider circuit may divide the second data strobe buffering signal to generate a divided signal and a divided bar signal. The internal signal generation circuit may be configured to generate a first to fourth data latch timing signals having different phases based on the first data strobe buffering signal, the first data strobe bar buffering signal, the divided signal and the divided buffering signal.

Abstract: A semiconductor device includes an input/output (I/O) line drive control circuit and a data I/O circuit. The I/O line drive control circuit is configured to generate drive control pulses having a generation sequence, wherein the generation sequence of the drive control pulses are controlled based on a command pulse and address latch signals, and wherein the address latch signals are set based on when the command pulse is generated to perform a read operation or a write operation. The command pulse is generated to perform a read operation or a write operation. The data I/O circuit controls data I/O operations of a plurality of bank groups based on the drive control pulses.

Abstract: A memory system comprises: a memory cell array suitable for storing first data and a first parity, which is used to correct an error of the first data; and an error correcting circuit suitable for generating second data and a second parity, which includes bits obtained by correcting an error of the first parity and a bit obtained by correcting an error of a second sub-parity; wherein the error correcting circuit includes: a single error correction and double error detection (SECDED) parity generator suitable for generating a second pre-parity, which includes a first sub-parity and the second sub-parity; a syndrome decoder suitable for generating a first parity error flag and a first data error flag by decoding a syndrome; a SEC parity corrector suitable for correcting an error of the first parity based on the first parity error flag; a DED parity error detector suitable for generating a second sub-parity error flag based on an error information of the first data used to generate the second sub-parity; and a D

Abstract: A semiconductor memory device includes a memory region including a plurality of memory blocks, and suitable for outputting first and second read data from first and second memory blocks among the plurality of memory blocks based on first and second read control signals and a read address signal; a scheduler suitable for outputting a read scheduling signal based on the first and second read control signals; and an output driver suitable for outputting the first and second read data by a predetermined burst length alternately twice or more to a data pad based on a mode signal, wherein the first read data are outputted to the data pad according to a first burst sequence, and the second read data are outputted to the data pad according to a second burst sequence, based on the read scheduling signal.

Abstract: An operating method for a semiconductor memory device includes: generating a whole-domain-crossing-unit reset signal based on a domain-crossing-unit reset signal input to a whole-domain-crossing-unit-reset-signal generator; and resetting a counter synchronized to a data clock of a domain-crossing unit based on the whole-domain-crossing-unit reset signal during a data clock preparation section in which the data clock does not toggle.

Abstract: A wireless power transmitter configured to wirelessly transmit power to an electronic device is provided.

Abstract: An internal data generation circuit and a semiconductor device including the same may be provided. The internal data generation circuit may include a data alignment circuit configured to align delayed data in synchronization with delayed strobe signals to generate aligned data. The delayed data may be generated by delaying input data in synchronization with internal strobe signals by a predetermined delay time. The delayed strobe signals may be generated by delaying less than all of the internal strobe signals. The internal strobe signals may be generated by dividing a frequency of a strobe signal.

Abstract: A memory system includes: an ECC unit suitable for generating third data by correcting second data and a third DBI flag by correcting a second DBI flag, based on the second data, the second DBI flag, and a second parity, which are provided through a channel; a DBI unit suitable for generating fourth data by determining whether a plurality of third data bits respectively corresponding to a plurality of DBI flag bits constituting the third DBI flag are inverted, based on the third data and the third DBI flag; and a DM unit suitable for generating a DM flag indicating whether a write operation is performed on a plurality of fourth data bits constituting the fourth data, based on the second data

Abstract: A semiconductor device may include a first buffer, a second buffer, a divider circuit and an internal signal generation circuit. The first buffer may buffer a first input signal and a second input signal to generate a first data strobe buffering signal and a first data strobe bar buffering signal. The second buffer may generate a second data strobe buffering signal based on the first input signal and a reference voltage. The divider circuit may divide the second data strobe buffering signal to generate a divided signal and a divided bar signal. The internal signal generation circuit may be configured to generate a first to fourth data latch timing signals having different phases based on the first data strobe buffering signal, the first data strobe bar buffering signal, the divided signal and the divided buffering signal.

Abstract: A semiconductor device includes a test data interface, a first data interface, and a second data interface. The test data interface generates first test data and second test data from data inputted through a test pad in response to a test control signal and outputs failure information to the test pad in response to a read control signal. The first data interface generates first aligned data from the first test data or the second test data in response to the test control signal. The second data interface generates second aligned data from the second test data.

Abstract: A semiconductor system includes a controller and a semiconductor device. The controller generates command signals, a composite control signal, and data signals. The semiconductor device generates a first mode signal and a second mode signal according to the command signals. The semiconductor device includes a write control circuit suitable for receiving the composite control signal and the data signals to determine an execution/non-execution of a data masking operation and a data bus inversion (DBI) operation when a write operation or a masking write operation is performed according to the first and second mode signals.

Abstract: A semiconductor device may include a data output circuit and control signal output circuit. The data output circuit may convert a first input signal and a second input signal sequentially inputted thereto into output data and may compare the first and second input signals with a storage datum to generate a first comparison signal and a second comparison signal. The control signal output circuit may detect logic levels of bits included in the first and second comparison signals to generate a first detection signal and a second detection signal, may generate a first flag signal and a second flag signal from the first and second detection signals in response to a storage flag signal, and may sequentially output the first and second flag signals as transmission control signals.

Abstract: The semiconductor device includes a first drive control signal generator suitable for generating a first drive control signal from a test input signal, a first output driver suitable for being controlled according to the first drive control signal, a second drive control signal generator suitable for generating a second drive control signal from the first drive control signal, and a second output driver suitable for being controlled according to the second drive control signal.

Abstract: An image display device including a display configured to display a first image is provided. The image display device includes a controller configured to generate a second image by enlarging a part of the first image displayed in a first region of the display and to control the display to display a part of the second image in the first region, and a sensor configured to sense a user input for moving the second image. In response to the user input, the controller is configured to control the display to move and display the second image, within the first region.

Abstract: A semiconductor device may be provided. The semiconductor device may include a test data interface, a first data interface, and a second data interface. The test data interface may be configured to generate first test data and second test data from data inputted through a test pad in response to a test control signal and outputs failure information to the test pad in response to a read control signal. The first data interface may be configured to generate first aligned data from the first test data or the second test data in response to the test control signal. The second data interface may be configured to generate second aligned data from the second test data.

Abstract: A semiconductor system may include first semiconductor device including a first pad, a second pad and a first test input pad, and suitable for storing data inputted in series through the first test input pad and outputting the stored data in parallel through the first pad and the second pad; a second semiconductor device including a third pad, a fourth pad and a second test output pad, and suitable for storing data inputted in parallel through the third pad and the fourth pad, a first through via connecting the first pad and the third pad so that the stored data outputted in parallel through the first pad is inputted in parallel through the third pad; and a second through via connecting the second pad and the fourth pad so that the stored data outputted in parallel through the second pad is inputted in parallel through the fourth pad.

Abstract: A semiconductor device includes a driving unit suitable for driving a plurality of signal lines, which are directly coupled to a plurality of bump pads, to a preset voltage level in a level determination period, and adjusting the preset voltage level in a predetermined order when the level determination period is repeated, a signal input circuit suitable for receiving voltage levels that are inputted through the signal lines and determining logic values for the inputted voltage levels of the signal lines, and an operation unit suitable for receiving voltage levels of the signal lines from the signal input circuit in a parallel manner in the level determination period, latching the logic values of the voltage levels, and serially outputting the logic values through a probe pad.