Abstract: The present invention relates to a thermoelectric composite material and a method for preparing a thermoelectric composite material. Specifically, the invention relates to a thermoelectric composite material in which graphene oxide attached with conductive metal nanoparticles is dispersed in a thermoelectric material and a method for preparing a thermoelectric composite powder comprising the steps of: growing conductive metal nanoparticles on the surface of graphene oxide (step 1); and introducing the graphene oxide attached with the conductive metal nanoparticles prepared in step 1 into a thermoelectric material precursor solution, followed by heat treatment (step 2).

Abstract: An electronic apparatus for providing a panorama image and a controlling method thereof are provided. The method includes acquiring photograph setting values of first images photographed respectively through a plurality of cameras, resetting a photograph setting value to be applied to at least one of the plurality of cameras based on the acquired photograph setting values and generating a panorama image comprising second images photographed through the plurality of cameras using the reset photograph setting value.

Abstract: A method and video device are disclosed for accessing information. In an embodiment of the present invention, part of data included in a title, being played, read from a storage medium or extracted from a broadcast signal is extracted and sent to a server over a network, and information corresponding to the part of the data (i.e., information related to the data and complete data of the data) is received from the server and played. Rather than the part of the data, information related to a position of the data, (e.g. a time point at which the playing of the data starts within the title or a radial position or a physical address at which the data is located in the storage medium) may be sent. The data may be data that forms audio, a frame-shaped video clip or a frame-shaped picture included in the title.

Abstract: Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed. Each active pattern is divided into a central portion and a peripheral portion facing the central portion by the gate structures. A protrusion of at least one of active pattern is formed. The protrusion is exposed from a top surface of the isolation layer, and transformed into silicide such that a first silicide ohmic pad is formed at the central portion of the active pattern and a second silicide ohmic pad is formed at the peripheral portion of the active pattern. A conductive line structure electrically connected to the first silicide ohmic pad is formed. A conductive contact electrically connected to the second silicide ohmic pad is formed. A data storage unit electrically connected to the conductive contact is formed.

Abstract: An electronic apparatus for acquiring a panorama image using a plurality of cameras and a method for controlling the electronic apparatus thereof are provided. The electronic apparatus includes a plurality of cameras for capturing an image, a sensor for acquiring movement information, and a processor for determining individual movement information of the plurality of cameras with reference to a predefined location using movement information acquired through the sensor, acquiring a plurality of images through the plurality of cameras based on the individual movement information and generating a panorama image using the plurality of photographed images.

Abstract: The present invention provides a liquid crystal composition having easily adjustable rotational viscosity while maintaining stability at low temperature, a clearing point and dielectric anisotropy (positive value) in an optimal condition according to an exemplary embodiment of the present invention, including: at least one liquid crystal compound selected from the group consisting of liquid crystal compounds represented by the following Chemical Formula 1, as a first component; at least one liquid crystal compound selected from the group consisting of liquid crystal compounds represented by the following Chemical Formula 2, as a second component; and at least one liquid crystal compound selected from the group consisting of liquid crystal compounds represented by the following Chemical Formula 3, as a third component.

Abstract: A semiconductor device including a direct contact and a bit line in a cell array region and a gate electrode structure in a peripheral circuit region, and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate including a cell array region including a first active region and a peripheral circuit region including a second active region, a first insulating layer on the substrate, the first insulating layer including contact holes exposing the first active region, a direct contact in the contact holes, wherein a direct contact is connected to the first active region, a bit line connected to the direct contact in the cell array region and extending in a first direction, and a gate insulating layer and a gate electrode structure, wherein a dummy conductive layer including substantially the same material as the direct contact is in the peripheral circuit region.

Abstract: A method and apparatus for generating terahertz waves using laser plasma are disclosed herein. The method of generating high-power terahertz waves includes generating plasma by focusing a laser beam on a gas within a vacuum chamber, radiating laser beams into the magnetized plasma from opposite directions so that the laser beams collide with each other at a preset location, and generating terahertz waves of a predetermined frequency through the oscillation of the plasma generated by the collision of the laser beams.

Abstract: A semiconductor device includes a substrate including a cell array region having a first active region and a peripheral circuit region having a second active region, an insulating layer pattern on the substrate and including a hole corresponding with the first active region, a DC conductive pattern in the hole, connected to the first active region, and buried in the substrate, a bit line connected to the DC conductive pattern and including a first bit line conductive pattern contacting the DC conductive pattern and covering a top surface of the insulating layer pattern, and a gate insulating layer and a gate electrode structure on the second active region, the gate electrode structure including a gate conductive pattern and a first gate electrode conductive pattern, the first gate electrode conductive pattern including a same material as the first bit line conductive pattern.

Abstract: A plasma diagnostic method and apparatus using Raman scattering are disclosed herein. The plasma diagnostic method using Raman scattering includes focusing a laser beam, controlled such that the laser beam enters a preset polarized state, into a gas within a vacuum chamber, generating plasma in response to the focusing of the laser beam, magnetizing the generated plasma by inducing an electromagnetic field using a radio frequency (RF) power source mounted on the vacuum chamber and configured to provide an RF signal, and performing plasma diagnostic parameter-based monitoring based on scattered light generated via the laser beam incident into the magnetized plasma.

Abstract: A method and apparatus for generating terahertz waves using laser plasma are disclosed herein. The method of generating high-power terahertz waves includes generating plasma by focusing a laser beam on a gas within a vacuum chamber, radiating laser beams into the magnetized plasma from opposite directions so that the laser beams collide with each other at a preset location, and generating terahertz waves of a predetermined frequency through the oscillation of the plasma generated by the collision of the laser beams.

Abstract: Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed. Each active pattern is divided into a central portion and a peripheral portion facing the central portion by the gate structures. A protrusion of at least one of active pattern is formed. The protrusion is exposed from a top surface of the isolation layer, and transformed into silicide such that a first silicide ohmic pad is formed at the central portion of the active pattern and a second silicide ohmic pad is formed at the peripheral portion of the active pattern. A conductive line structure electrically connected to the first silicide ohmic pad is formed. A conductive contact electrically connected to the second silicide ohmic pad is formed. A data storage unit electrically connected to the conductive contact is formed.

Abstract: A semiconductor device includes a substrate having a field area that defines active areas, gate trenches in the substrate and extending in a first direction, a buried gate in a respective gate trench, gate capping fences in a respective gate trench over a respective buried gate, the gate capping fences protruding from top surfaces of the active areas and extending in the first direction, bit line trenches in the gate capping fences, a respective bit line trench crossing the gate capping fences and extending in a second direction perpendicular to the first direction, an insulator structure on inner walls of a respective bit line trench, bit lines and bit line capping patterns stacked on the insulator structures in a respective bit line trench, contact pads self-aligned with the gate capping fences and on the substrate between the adjacent bit lines, and a lower electrode of a capacitor on a respective contact pad.

Abstract: A semiconductor device includes a substrate having a field area that defines active areas, gate trenches in the substrate and extending in a first direction, a buried gate in a respective gate trench, gate capping fences in a respective gate trench over a respective buried gate, the gate capping fences protruding from top surfaces of the active areas and extending in the first direction, bit line trenches in the gate capping fences, a respective bit line trench crossing the gate capping fences and extending in a second direction perpendicular to the first direction, an insulator structure on inner walls of a respective bit line trench, bit lines and bit line capping patterns stacked on the insulator structures in a respective bit line trench, contact pads self-aligned with the gate capping fences and on the substrate between the adjacent bit lines, and a lower electrode of a capacitor on a respective contact pad.

Abstract: A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.

Abstract: A semiconductor device includes a substrate having a field area that defines active areas, gate trenches in the substrate and extending in a first direction, a buried gate in a respective gate trench, gate capping fences in a respective gate trench over a respective buried gate, the gate capping fences protruding from top surfaces of the active areas and extending in the first direction, bit line trenches in the gate capping fences, a respective bit line trench crossing the gate capping fences and extending in a second direction perpendicular to the first direction, an insulator structure on inner walls of a respective bit line trench, bit lines and bit line capping patterns stacked on the insulator structures in a respective bit line trench, contact pads self-aligned with the gate capping fences and on the substrate between the adjacent bit lines, and a lower electrode of a capacitor on a respective contact pad.

Abstract: A semiconductor device includes a substrate having a field area that defines active areas, gate trenches in the substrate and extending in a first direction, a buried gate in a respective gate trench, gate capping fences in a respective gate trench over a respective buried gate, the gate capping fences protruding from top surfaces of the active areas and extending in the first direction, bit line trenches in the gate capping fences, a respective bit line trench crossing the gate capping fences and extending in a second direction perpendicular to the first direction, an insulator structure on inner walls of a respective bit line trench, bit lines and bit line capping patterns stacked on the insulator structures in a respective bit line trench, contact pads self-aligned with the gate capping fences and on the substrate between the adjacent bit lines, and a lower electrode of a capacitor on a respective contact pad.

Abstract: Provided are a semiconductor device and a method of forming thereof. The semiconductor device includes a substrate having an isolating trench defining active areas, gate structures formed in the active area and crossing the isolating trench, a first protection layer formed on the active area of the substrate, and a second protection layer formed on the first protection layer, wherein, in a first isolating area in which the gate structure and the isolating trench cross, the first protection layer is conformally formed on an inner wall and bottom of the isolating trench, and the second protection layer is formed on the first protection layer formed on the bottom of the isolating trench.

Abstract: A method and video device are disclosed for accessing information. In an embodiment of the present invention, part of data included in a title, being played, read from a storage medium or extracted from a broadcast signal is extracted and sent to a server over a network, and information corresponding to the part of the data (i.e., information related to the data and complete data of the data) is received from the server and played. Rather than the part of the data, information related to a position of the data, (e.g. a time point at which the playing of the data starts within the title or a radial position or a physical address at which the data is located in the storage medium) may be sent. The data may be data that forms audio, a frame-shaped video clip or a frame-shaped picture included in the title.

Abstract: A method and video device are disclosed for accessing information. In an embodiment of the present invention, part of data included in a title, being played, read from a storage medium or extracted from a broadcast signal is extracted and sent to a server over a network, and information corresponding to the part of the data (i.e., information related to the data and complete data of the data) is received from the server and played. Rather than the part of the data, information related to a position of the data, (e.g. a time point at which the playing of the data starts within the title or a radial position or a physical address at which the data is located in the storage medium) may be sent. The data may be data that forms audio, a frame-shaped video clip or a frame-shaped picture included in the title.