Abstract: A solar cell module disassembling device is disclosed. The device of present invention comprises a frame unit, wherein a laminated panel having a first panel and a second panel is mounted on the frame unit, and wherein the first and second panels are stacked and bonded; a guide module, being elongated in a forward and backward direction; a scraper unit, being movably coupled to the guide module, having a blade module, wherein the blade module moves in the forward and backward direction and presses the laminated panel and disassembles the laminated panel; and a transfer unit, being coupled to the scraper unit, delivering a driving force to the scraper unit, transferring the scraper unit.

Abstract: Disclosed is a partial dismantling device of a photovoltaic module capable of classifying and collecting the photovoltaic module for recycling the photovoltaic module which includes: a transfer unit for transferring a photovoltaic module; a grind unit provided with a plurality of grinders in multiple levels, to grind the element layers of a grinding region into particles of collectible forms; and a suction unit provided with a plurality of inhalers respectively corresponding to the plurality of grinders, to classify the particles pulverized by the grind unit and to inhale the same.

Abstract: A solar cell module disassembling device is disclosed. The device of present invention comprises a frame unit, wherein a laminated panel having a first panel and a second panel is mounted on the frame unit, and wherein the first and second panels are stacked and bonded; a guide module, being elongated in a forward and backward direction; a scraper unit, being movably coupled to the guide module, having a blade module, wherein the blade module moves in the forward and backward direction and presses the laminated panel and disassembles the laminated panel; and a transfer unit, being coupled to the scraper unit, delivering a driving force to the scraper unit, transferring the scraper unit.

Abstract: The present invention relates to an aerogel composite and a preparation method thereof. The preparation method of the aerogel composite of the present invention comprises the following steps; preparing a hydrophobic gel (step 1); dispersing fiber in a solvent to prepare a solution (step 2); adding the hydrophobic gel above in the solution of step 2 and stirring the mixture to prepare a fiber and hydrophobic gel mixed solution (step 3); separating floc from the mixed solution of step 3 (step 4); and drying the floc (step 5). According to the preparation method of the aerogel composite of the present invention, a high performance aerogel composite having various shapes can be prepared.

Abstract: Disclosed is a partial dismantling device of a photovoltaic module capable of classifying and collecting the photovoltaic module for recycling the photovoltaic module which includes: a transfer unit for transferring a photovoltaic module; a sensor unit for distinguishing grinding heights of the photovoltaic module arranged on the transfer unit; a grind unit provided with a plurality of grinders in multiple levels, to grind the element layers of a grinding region into particles of collectible forms; and a suction unit provided with a plurality of inhalers respectively corresponding to the plurality of grinders, to classify the particles pulverized by the grind unit and to inhale the same. Thereby, the present invention may improve the efficiency in the subsequent classifying process of the photovoltaic module particles in a classifying unit, with an advantage of applying the partial dismantling device of the photovoltaic module irrespective of damages on a glass substrate.

Abstract: The present invention relates to an aerogel composite and a preparation method thereof. The preparation method of the aerogel composite of the present invention comprises the following steps; preparing a hydrophobic gel (step 1); dispersing fiber in a solvent to prepare a solution (step 2); adding the hydrophobic gel above in the solution of step 2 and stirring the mixture to prepare a fiber and hydrophobic gel mixed solution (step 3); separating floc from the mixed solution of step 3 (step 4); and drying the floc (step 5). According to the preparation method of the aerogel composite of the present invention, a high performance aerogel composite having various shapes can be prepared.

Abstract: A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.

Abstract: A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.

Abstract: Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing an insulating protective layer wrapping a photovoltaic cell of the photovoltaic module; and obtaining the photovoltaic cell of the photovoltaic module.

Abstract: A semiconductor device including a channel layer, a gate insulating layer formed on a surface of the channel layer, a cell gate pattern formed along the gate insulating layer, and an Electro Migration (EM) pattern formed in the cell gate pattern, and movable by an electric field formed between the cell gate pattern and the channel layer.

Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.

Abstract: A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.

Abstract: In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.

Abstract: A resistive memory device includes word lines stacked on top of one another, at least one first selection line formed over the word lines, a first channel layer passing through the word lines and the first selection line, a first phase change material layer formed in the first channel layer and overlapping the word lines, and a first insulating layer formed in the first channel layer and overlapping the first selection line.

Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

Abstract: A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.

Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

Abstract: A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom.

Abstract: Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing an insulating protective layer wrapping a photovoltaic cell of the photovoltaic module; and obtaining the photovoltaic cell of the photovoltaic module.

Abstract: Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.