Patents by Inventor Young Soo Ahn

Young Soo Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8663739
    Abstract: The present invention relates to a method of manufacturing a mat containing aerogel and to a mat manufactured using this method. A method of manufacturing a mat containing silica aerogel according to an aspect of the invention includes: (S1) producing a wet gel by mixing water glass and alcohol in a reactor; (S2) modifying a surface of the wet gel by adding an organic silane compound and an organic solvent to the reactor and mixing; (S3) separating a upper liquid from a solution in the reactor and impregnating a fibrous matrix with the upper liquid; and (S4) drying the fibrous matrix impregnated with the upper liquid. According to an aspect of the invention, a mat containing silica aerogel can be manufactured using only water glass as raw material, even when applying the drying process in an ambient environment, without using expensive materials or supercritical apparatus.
    Type: Grant
    Filed: June 10, 2010
    Date of Patent: March 4, 2014
    Assignee: Korea Institute of Energy Research
    Inventors: Jeong-Gu Yeo, Young-Soo Ahn, Churl-Hee Cho, Jeong Min Hong
  • Patent number: 8659575
    Abstract: A capacitive touch panel device of a high-sensitivity digital system. The capacitive touch panel device includes a substrate, a display area formed at the center of the substrate, a non-active area formed along the outer periphery of the display area, extending to the end of the substrate, and mounted with a plurality of signal transmitting wire electrodes, two pairs of position sensing main sensor electrodes arranged in a two-dimensional fashion in the display area to display coordinates, a plurality of bridge electrodes interposed between the two pairs of position-sensing main sensor electrodes, an external terminal unit electrically connected to the ends of the plurality of signal transmitting wire electrodes, and a position sensing sub electrode electrically connected to each of the two pairs of position-sensing main sensor electrodes, and arranged in the direction different from the direction wherein the bridge electrodes are connected.
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: February 25, 2014
    Assignee: Sanghyun Han
    Inventor: Young Soo Ahn
  • Publication number: 20130334589
    Abstract: In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.
    Type: Application
    Filed: December 10, 2012
    Publication date: December 19, 2013
    Applicant: SK Hynix Inc.
    Inventor: Young Soo AHN
  • Publication number: 20130307050
    Abstract: A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.
    Type: Application
    Filed: September 10, 2012
    Publication date: November 21, 2013
    Inventors: Young-Soo AHN, Jeong-Seob OH
  • Publication number: 20130299121
    Abstract: The present disclosure relates to the preparation of a polymer composite material for building air conditioning or dehumidification having superior water-adsorbing ability, durability and antibacterial properties by electro spinning. Specifically, the disclosed method for preparing a polymer composite material for building air conditioning or dehumidification includes: (S1) adding a crosslinking agent or a crosslinking agent and a porous filler for conferring durability and antibacterial properties into a hydrophilic polymer solution antibacterial properties to prepare a polymer composite material solution; (S2) electrospinning the polymer composite material solution to prepare a nanofiber sheet; and (S3) crosslinking the nanofiber sheet by heat-treatment.
    Type: Application
    Filed: December 15, 2010
    Publication date: November 14, 2013
    Inventors: Young-soo Ahn, Jeong-gu Yeo, Kuck-tack Chue, Churl-hee Cho, Chang-kook Hong, Sang-youn Oh, Se-hee Kim, Hyeong-seon Oh, Jae-sik Ryu, Seung-hyun Shin
  • Publication number: 20130291596
    Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo Yun Jang, Jin Seok Lee, Joon Soo Kim, Young Soo Ahn
  • Publication number: 20130291595
    Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo Yun Jang, Jin Seok Lee, Joon Soo Kim, Young Soo Ahn
  • Publication number: 20130277882
    Abstract: Disclosed herein is a method of manufacturing inorganic hollow yarns, such as cermets, oxide-non oxide composites, poorly sinterable non-oxides, and the like, at low costs. The method includes preparing a composition comprising a self-propagating high temperature reactant, a polymer and a dispersant, wet-spinning the composition through a spinneret to form wet-spun yarns, washing and drying the wet-spun yarns to form polymer-self propagating high temperature reactant hollow yarns, and heat-treating the polymer-self propagating high temperature reactant hollow yarns to remove a polymeric component from the polymer-self propagating high temperature reactant hollow yarns while inducing self-propagating high temperature reaction of the self-propagating high temperature reactant to form inorganic hollow yarns. The composition comprises 45˜60 wt % of the self-propagating high temperature reactant, 6˜17 wt % of the polymer, 0.1˜4 wt % of the dispersant, and the balance of an organic solvent.
    Type: Application
    Filed: June 18, 2013
    Publication date: October 24, 2013
    Inventors: CHURL-HEE CHO, Do-Kyung Kim, Jeong-Gu Yeo, Young-Soo Ahn, Dong-Kook Kim, Hong-Soo Kim
  • Publication number: 20130263777
    Abstract: There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material.
    Type: Application
    Filed: April 28, 2012
    Publication date: October 10, 2013
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jin Seok Lee, Bo Yun Jang, Joon Soo Kim, Young Soo Ahn
  • Patent number: 8491716
    Abstract: Disclosed herein is a method of manufacturing inorganic hollow yarns, such as cermets, oxide-non oxide composites, poorly sinterable non-oxides, and the like, at low costs. The method includes preparing a composition comprising a self-propagating high temperature reactant, a polymer and a dispersant, wet-spinning the composition through a spinneret to form wet-spun yarns, washing and drying the wet-spun yarns to form polymer-self propagating high temperature reactant hollow yarns, and heat-treating the polymer-self propagating high temperature reactant hollow yarns to remove a polymeric component from the polymer-self propagating high temperature reactant hollow yarns while inducing self-propagating high temperature reaction of the self-propagating high temperature reactant to form inorganic hollow yarns. The composition comprises 45˜60 wt % of the self-propagating high temperature reactant, 6˜17 wt % of the polymer, 0.1˜4 wt % of the dispersant, and the balance of an organic solvent.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: July 23, 2013
    Assignee: Korea Institute of Energy Research
    Inventors: Churl-Hee Cho, Do-Kyung Kim, Jeong-Gu Yeo, Young-Soo Ahn, Dong-Kook Kim, Hong-Soo Kim
  • Publication number: 20130170303
    Abstract: A nonvolatile memory device includes a plurality of channel structures formed over a substrate and including a plurality of interlayer dielectric layers alternately stacked with a plurality of channel layers; first and second vertical gates alternately disposed between the channel structures along one direction crossing with the channel structure and adjoining the plurality of channel layers with a memory layer interposed therebetween; and a pair of first and second word lines disposed over or under the channel structures and extending along the one direction in such a way as to overlap with the first and second vertical gates. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates.
    Type: Application
    Filed: September 11, 2012
    Publication date: July 4, 2013
    Inventors: Young-Soo AHN, Jong-Moo Choi, Yoo-Hyun Noh
  • Publication number: 20130165727
    Abstract: Disclosed is a method for selective dealkylation of alkyl-substituted C9+ aromatic compounds using a bimodal porous dealkylation catalyst at a low temperature. The catalyst has a bimodal porous structure including both mesopores and micropores. The catalyst includes a crystalline aluminosilicate and a metal. The catalyst is highly active at a low temperature. According to the method, C9+ aromatic compounds substituted with at least one C2+ alkyl group as by-products formed by xylene production can be selectively dealkylated and converted to BTX, etc. on a large scale within a short time. In addition, the method is an environmentally friendly process entailing reduced waste treatment cost when compared to conventional mesitylene production methods. Therefore, high value-added mesitylene can be separated from low value-added C9+ aromatic compounds at lower cost compared to conventional methods.
    Type: Application
    Filed: June 22, 2012
    Publication date: June 27, 2013
    Applicants: INHA-INDUSTRY PARTNERSHIP INSTITUTE, S-OIL CORPORATION
    Inventors: Sung Hyeon Baeck, Geon Joong Kim, Dong-Kyun Noh, Tae Young Jang, Tae-Yun Kim, Young Soo Ahn, Chan-Ju Song, Sang-Cheol Paik
  • Publication number: 20130161783
    Abstract: A semiconductor device includes an isolation trench formed in a semiconductor substrate; an isolation layer filling the isolation trench; and a first epitaxial layer interposed between the isolation layer and the semiconductor substrate, wherein a lattice structure of the semiconductor substrate has an angle difference from a lattice structure of the first epitaxial layer adjacent to the semiconductor substrate.
    Type: Application
    Filed: September 6, 2012
    Publication date: June 27, 2013
    Inventors: Jeong-Seob OH, Young-Soo Ahn
  • Publication number: 20130153979
    Abstract: A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.
    Type: Application
    Filed: September 6, 2012
    Publication date: June 20, 2013
    Inventors: Yoo Hyun NOH, Jong Moo Choi, Young Soo Ahn
  • Publication number: 20130106008
    Abstract: A method of preparing transparent or nontransparent silica aerogel granules. The method includes forming a granular wet gel by spraying a silica sol into alcohol, the silica sol being prepared by mixing a water glass solution or an opacifier-containing water glass solution with an inorganic acid solution, forming a granular alcohol gel through gelation aging and solvent substitution of the granular wet gel in alcohol, hydrophobically modifying the surface of the granular alcohol gel using an organic silane compound, and drying the surface modified gel at ambient pressure or in a vacuum. The method may prepare silica aerogel granules in a short period of time through heat treatment at a relatively low temperature and at ambient pressure or in a vacuum, thereby ensuring excellent economic feasibility, continuity and reliability, suited for mass production.
    Type: Application
    Filed: September 28, 2011
    Publication date: May 2, 2013
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Young-Soo Ahn, Jeong-gu Yeo, Churl-Hee Cho
  • Publication number: 20130067959
    Abstract: The present disclosure provides a graphite crucible induction-based silicon melting. The graphite crucible comprises a cylindrical body having a plurality of slits which is formed through an outer wall and an inner wall of the cylindrical body and a bottom part connected with an edge of the cylindrical body to seal an end of the cylindrical body.
    Type: Application
    Filed: November 15, 2012
    Publication date: March 21, 2013
    Applicant: Korea Institute of Energy Research
    Inventors: Jin Seok Lee, Young Soo Ahn, Bo Yun Jang, Joon Soo Kim
  • Publication number: 20120288432
    Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
    Type: Application
    Filed: October 6, 2011
    Publication date: November 15, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jin-Seok LEE, Bo-Yun JANG, Young-Soo AHN
  • Publication number: 20120288418
    Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.
    Type: Application
    Filed: November 25, 2011
    Publication date: November 15, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: JIN SEOK LEE, BO YUN JANG, YOUNG SOO AHN
  • Publication number: 20120025127
    Abstract: The present invention relates to a method of manufacturing a mat containing aerogel and to a mat manufactured using this method. A method of manufacturing a mat containing silica aerogel according to an aspect of the invention includes: (S1) producing a wet gel by mixing water glass and alcohol in a reactor; (S2) modifying a surface of the wet gel by adding an organic silane compound and an organic solvent to the reactor and mixing; (S3) separating a upper liquid from a solution in the reactor and impregnating a fibrous matrix with the upper liquid; and (S4) drying the fibrous matrix impregnated with the upper liquid. According to an aspect of the invention, a mat containing silica aerogel can be manufactured using only water glass as raw material, even when applying the drying process in an ambient environment, without using expensive materials or supercritical apparatus.
    Type: Application
    Filed: June 10, 2010
    Publication date: February 2, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jeong-Gu Yeo, Young-Soo Ahn, Churl-Hee Cho, Jeong Min Hong
  • Publication number: 20120009120
    Abstract: The present disclosure relates to a thermal cracking resistant zeolite membrane and a method of fabricating the same. The method includes dissolving an alumina-based material, a silica-based material and sodium hydroxide in water to prepare an aqueous solution, stirring the aqueous solution to form a hydrothermal solution, preparing a slurry of zeolite seeds through wet-type vibration pulverization and centrifugal separation of zeolite powder, passing the zeolite seeds through a support by vacuum filtration such that the zeolite seeds can be infiltrated into an inner region of the support ranging from a depth of 3 ?m to a depth corresponding to 50% of a total thickness of the support, and immersing the support into the hydrothermal solution for hydrothermal treatment to grow a dense zeolite separation layer not only on the surface of the support but also on the inner region thereof.
    Type: Application
    Filed: July 26, 2010
    Publication date: January 12, 2012
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: CHURL-HEE CHO, Jeong-Gu Yeo, Young-Soo Ahn, Si-Kyung Kim, Joon-Soo Kim, Nam-Jo Jeong, Bo-Yun Jang, Dong-Kook Kim, Hong-Soo Kim