Abstract: A method of writing data, including: obtaining a write instruction; writing a first data of write data to a target physical unit in a target word line of a plurality of word lines in accordance with the write instruction; after writing the first data, when the target word line has one or more empty physical units arranged after the target physical unit, selecting one or more further target physical unit respectively located in one or more further target word lines; and writing second data connected after the first data in the write data to the selected further target physical units, wherein the one or more further target word lines are arranged after the target word line.

Abstract: A method of manufacturing resin composition includes following operations. A nano-particle filler, a micro-inorganic particle, and a resin are stirred and mixed to form a mixture. The mixture is centrifuged at a high speed to form an upper layer mixing liquid and a lower layer mixing liquid. The upper layer mixing liquid is taken out and obtains the resin composition.

Abstract: A data accessing method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: reading a codeword stored in a physical programming unit, and calculating a bit change ratio of a bit value change in dummy data included in the codeword; adjusting a read voltage level or a log likelihood ratio according to the bit change ratio; and performing a decoding operation on the codeword by using the adjusted read voltage level or the adjusted log likelihood ratio.

Abstract: A voltage prediction method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a plurality of memory cells in a rewritable non-volatile memory module by using a first read voltage level to obtain count information, and the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the memory cells; and predicting a second read voltage level according to the count information, and the second read voltage level is configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.

Abstract: A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.

Abstract: An embodiment identifies a fileset used by an executing application. An embodiment generates, at a first time, a first snapshot of the fileset, the first snapshot comprising a first state of the fileset at the first time and a first indicator corresponding to the first state of the fileset. An embodiment selects, at a recovery time later than the first time, from a sequence of snapshots of the fileset including the first snapshot, a recovery snapshot, the recovery snapshot comprising a recovery indicator, wherein the recovery indicator has a difference from the first indicator that is higher than a threshold value. An embodiment restores, using the recovery snapshot, the fileset to a state other than the first state, the restoring resulting in a restored application.

Abstract: A power amplifier comprising a first transistor pair and a first odd mode resistor string. The first transistor pair has a first transistor and a second transistor. A first end of the first transistor is symmetrically disposed to a first end of the second transistor. A plurality of first odd mode resistors are serially coupled between the first end of the first transistor and the first end of the second transistor. A total length of the first odd mode resistor string is substantially equal to a distance between the first end of the first transistor and the first end of the second transistor.

Abstract: A switching circuit and a method of providing the switching circuit are provided. The switching circuit includes a first transmission amplifier, a second transmission amplifier, a third transmission amplifier, and a fourth transmission amplifier. The first transmission amplifier amplifies a first signal at a first connection port and transmits the first signal to a second connection port in a first mode. The second transmission amplifier amplifies a second signal at a third connection port and transmits the second signal to a fourth connection port in the first mode. The third transmission amplifier amplifies the first signal at the first connection port and transmits the first signal to the fourth connection port in the second mode. The fourth transmission amplifier amplifies the second signal at the third connection port and transmits the second signal to the second connection port in the second mode.

Abstract: An embodiment identifies a fileset used by an executing application. An embodiment generates, at a first time, a first snapshot of the fileset, the first snapshot comprising a first state of the fileset at the first time and a first indicator corresponding to the first state of the fileset. An embodiment selects, at a recovery time later than the first time, from a sequence of snapshots of the fileset including the first snapshot, a recovery snapshot, the recovery snapshot comprising a recovery indicator, wherein the recovery indicator has a difference from the first indicator that is higher than a threshold value. An embodiment restores, using the recovery snapshot, the fileset to a state other than the first state, the restoring resulting in a restored application.

Abstract: A decoding method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending at least one read command sequence instructing to read a first physical unit in a rewritable non-volatile memory module; receiving response data from the rewritable non-volatile memory module, wherein the response data includes a plurality of identification bits, and the plurality of identification bits reflect a voltage variation of a first bit line where a first memory cell in the first physical unit is located during a discharge process; determining a decoding parameter corresponding to the first memory cell according to the plurality of identification bits; and decoding data read from the first memory cell according to the decoding parameter.

Abstract: An apparatus, a computer-implemented method, and a system for controlling maintenance of canary files. An apparatus includes a canary file module that determine access frequency of files and migrates one or more of the files responsive to the access frequency. At least a portion of said module includes one or more of hardware circuits, programmable hardware devices and executable code, the executable code stored on one or more computer readable storage media.

Abstract: A manufacturing method for an antibacterial fiber includes the following steps. A dipping step is performed to soak a conductive fiber in a solution, in which the solution includes an ionic compound, and the ionic compound includes a metal cation. An oxidation step is performed by using the conductive fiber as an anode, such that an antibacterial material produced by the solution is adhered to a surface of the conductive fiber, in which the antibacterial material includes a metal oxide.

Abstract: A voltage prediction method, a memory storage device and a memory control circuit unit are disclosed. The method includes: reading a plurality of memory cells in a rewritable non-volatile memory module by using a first read voltage level to obtain count information, and the first read voltage level is configured to distinguish a first state and a second state adjacent to each other in a threshold voltage distribution of the memory cells, and the count information reflects a total number of first memory cells meeting a target condition among the memory cells; and predicting a second read voltage level according to the count information, and the second read voltage level is configured to distinguish a third state and a fourth state adjacent to each other in the threshold voltage distribution.

Abstract: A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.

Abstract: A computer-implemented method, according to one embodiment, includes: determining, for each pair of HCI systems where each pair includes a first HCI system coupled to another HCI system, a federation relationship setting that corresponds to each pair. The federation relationship settings are used to control a flow of data, as well as to control a flow of workload scheduling, between the first HCI system and the other HCI systems in the respective pairs. Moreover, determining a federation relationship setting that corresponds to a pair includes: determining whether a risk score which corresponds to the pair is outside a predetermined range. In response to determining that the risk score is outside the predetermined range, a restrictive federation relationship setting is assigned to the pair, and in response to determining that the risk score is not outside the predetermined range, a permissive federation relationship setting is assigned to the pair.

Abstract: The present invention relates to carbon fiber composites and a method for producing the same. By reducing specific transition metal ions with a specific concentration, the method for producing the carbon fiber composites can form nanoparticles of a transition metal on an outer surface of a titanium dioxide layer encapsulating a carbon fiber to produce the carbon fiber composites. The nanoparticles of the transition metal directionally contact the titanium dioxide layer, so that the carbon fiber composites have synergistically photocatalytic activity.

Abstract: A computer-implemented method, according to one approach, includes: monitoring actions of a user having access to a cluster, and in response to determining that the user has performed a risk event, incrementing a risk score assigned to the user. A determination is also made as to whether the incremented risk score is outside a predetermined range, and in response to determining that the incremented risk score is outside the predetermined range, a snapshot quota assigned to the user is dynamically reduced.

Abstract: A decoding method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending at least one read command sequence instructing to read a first physical unit in a rewritable non-volatile memory module; receiving response data from the rewritable non-volatile memory module, wherein the response data includes a plurality of identification bits, and the plurality of identification bits reflect a voltage variation of a first bit line where a first memory cell in the first physical unit is located during a discharge process; determining a decoding parameter corresponding to the first memory cell according to the plurality of identification bits; and decoding data read from the first memory cell according to the decoding parameter.

Abstract: A switching circuit and a method of providing the switching circuit are provided. The switching circuit includes a first transmission amplifier, a second transmission amplifier, a third transmission amplifier, and a fourth transmission amplifier. The first transmission amplifier amplifies a first signal at a first connection port and transmits the first signal to a second connection port in a first mode. The second transmission amplifier amplifies a second signal at a third connection port and transmits the second signal to a fourth connection port in the first mode. The third transmission amplifier amplifies the first signal at the first connection port and transmits the first signal to the fourth connection port in the second mode. The fourth transmission amplifier amplifies the second signal at the third connection port and transmits the second signal to the second connection port in the second mode.

Abstract: A resin matrix composition is provided in the present invention. The resin matrix composition includes an epoxy resin, a polysulfone engineering plastic, a modified polyetherimide and an amine curing agent. The modified polyetherimide is formed from a nucleophilic compound and polyetherimide. The nucleophilic compound has a nucleophile such as hydroxyl group, sulfhydryl group, carboxyl group and/or amine group. Therefore, a resin matrix with two phase separation of island phase and co-continuous phase is formed. The resin matrix can have both great flexural strength and toughness. Moreover, the resin matrix has suitable viscosity, such that it is appropriate for impregnating carbon fiber to produce prepreg and carbon fiber composites.