Abstract: A method for generating a random number, a memory storage device and a control circuit are provided. The method includes: writing data into a plurality of memory cells; reading at least one of the memory cells repeatedly according to a first read voltage to obtain a plurality of sensing currents; and generating the random number according to the sensing currents.

Abstract: There is a method and system for capability-based resource allocation in a software-defined environment that performs the following steps (not necessarily in the following order): (i) determining a set of capability characteristics for a plurality of workload resources within a software-defined environment; (ii) determining a set of workload components for a specified workload; and (iii) identifying a set of workload resources from the plurality of workload resources to allocate to the specified workload based, at least in part, on the set of capability characteristics corresponding to each workload within the set of workload resources. A workload component of the set of workload components has a unique set of workload characteristics.

Abstract: A data programming method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data and programming the first data into a first lower physical programming unit; receiving second data; in response to the second data to be programmed into a first upper physical programming unit corresponding to the first lower physical programming unit, performing a first data obtaining operation which does not include reading the first lower physical programming unit by using a default read voltage; and programming the second data into the first upper physical programming unit according to the third data obtained through the first data obtaining operation.

Abstract: Provided are a method, system, and computer program product for processing read and write requests in a storage controller. A host adaptor in the storage controller receives a write request from a host system for a storage address in a storage device. The host adaptor sends write information indicating the storage address updated by the write request to a device adaptor in the storage controller. The host adaptor writes the write data to a cache in the storage controller. The device adaptor indicates the storage address indicated in the write information to a modified storage address list stored in the device adaptor, wherein the modified storage address list indicates modified data in the cache for storage addresses in the storage device.

Abstract: A NAND flash memory unit, an operating method and a reading method are provided. The NAND flash memory unit includes a plurality of gate layers, a tunnel layer, a charge trapping layer, a conductor layer and a second dielectric layer. A first dielectric layer is included between two adjacent gate layers among the gate layers. The tunnel layer, the charge trapping layer, the conductor layer, and the second dielectric layer penetrate the gate layers. The charge trapping layer is disposed between the tunnel layer and the gate layers, and the second dielectric layer is disposed between the conductor layer and the tunnel layer. Therefore, an erasing speed may be increased; the charge trapping layer may be repaired; the controllability of the gate layers may be increased.

Abstract: A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.

Abstract: The present disclosure provides a memory management method for a rewritable non-volatile memory module. The rewritable non-volatile memory module includes physical programming units, each of which includes multiple bits. The memory management method includes: identifying a first physical programming unit by applying a predetermined read voltage, where the first physical programming unit is identified as in a fully-erased status; identifying a second and a third physical programming units which are programmed before the first physical programming unit; acquiring status data of the second and the third physical programming unit; computing a difference of the status data between the second and the third physical programming unit; if the difference is larger than a threshold, identifying the second physical programming unit as in a program failure status.

Abstract: A memory management method, a memory storage device and a memory controlling circuit unit are provided. The method includes: programming data into a plurality of memory cells of a rewritable non-volatile memory module; determining whether a storage state of the data conforms with a first condition or a second condition based on a default bias range and a threshold voltage distribution of the memory cells storing the data; performing a first operation if the storage state of the data conforms with the first condition; and performing a second operation if the storage state of the data conforms with the second condition. Accordingly, the probability of misidentifying the valid data as the invalid data may be reduced.

Abstract: A memory cell programming method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module at least into a first area and a second area, wherein a first programming parameter set is configured initially for writing a first kind of data into the physical erasing units of the first area and the upper physical programming units of the physical erasing units of the first area are not written with data. The method also includes adjusting the first set of programming parameters to obtain a second programming parameter set, and applying the second set of programming parameters to write a second kind of data into the physical erasing units of the second area, wherein the upper physical programming units of the physical erasing units of the second area are not written with data.

Abstract: A memory cell programming method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of the rewritable non-volatile memory module at least into a first area and a second area, wherein a first programming parameter set is configured initially for writing a first kind of data into the physical erasing units of the first area and the upper physical programming units of the physical erasing units of the first area are not written with data. The method also includes adjusting the first set of programming parameters to obtain a second programming parameter set, and applying the second set of programming parameters to write a second kind of data into the physical erasing units of the second area, wherein the upper physical programming units of the physical erasing units of the second area are not written with data.

Abstract: A time estimating method, a memory storage device, and a memory controlling circuit unit are provided for a rewritable non-volatile memory module having memory cells. The method includes: writing first data into first memory cells of the memory cells; reading the first memory cells according to a reading voltage, so as to determine whether each of the first memory cells belongs to a first state or a second state; and calculating a quantity of the first memory cells belonging to the first state, and obtaining a time information of the rewritable non-volatile memory module according to the quantity.

Abstract: A configuration method of erase operation, a memory controlling circuit unit, and a memory storage device are provided. The method includes: determining whether a first use state of a first physical unit conforms to a first default state; and if the first use state conforms to the first default state, adjusting a first erase operation corresponding to the first physical unit from using a first mode to a second mode. Thereby, a threshold voltage distribution of memory cells in an erase state may be maintained in a proper range.

Abstract: An error processing method for a rewritable non-volatile memory module, a memory storage device and a memory controlling circuit unit are provided. The rewritable non-volatile memory module includes a plurality of memory cells. The error processing method includes: sending a first read command sequence for reading a plurality of bits from the memory cells; performing a first decoding on the bits; determining whether each error belongs to a first type error or a second type error if the bits have at least one error; recording related information of a first error in the at least one error if the first error belongs to the first type error; and not recording the related information of the first error if the first error belongs to the second type error. Accordingly, errors with particular type may be processed suitably.

Abstract: A NAND flash memory unit, an operating method and a reading method are provided. The NAND flash memory unit includes a plurality of gate layers, a tunnel layer, a charge trapping layer, a conductor layer and a second dielectric layer. A first dielectric layer is included between two adjacent gate layers among the gate layers. The tunnel layer, the charge trapping layer, the conductor layer, and the second dielectric layer penetrate the gate layers. The charge trapping layer is disposed between the tunnel layer and the gate layers, and the second dielectric layer is disposed between the conductor layer and the tunnel layer. Therefore, an erasing speed may be increased; the charge trapping layer may be repaired; the controllability of the gate layers may be increased.

Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract: A data writing method, and a memory control circuit unit and a memory storage apparatus using the method are provided. The method including: programming data to several memory cells on a first word line of the rewritable non-volatile memory module of the memory storage apparatus, and a first predetermined reading voltage is initially configured for the first word line. The data storing method further includes: adjusting the first predetermined reading voltage to obtain a first available reading voltage for the first word line, and applying the first available reading voltage to the first word line to read first page data. The storing method further includes: if the difference value between the first available reading voltage and the first predetermined reading voltage is larger than a predetermined threshold value, performing a protection operation for the first page data.

Abstract: A NAND flash memory unit, an operating method and a reading method are provided. The NAND flash memory unit includes a plurality of gate layers, a tunnel layer, a charge trapping layer, a conductor layer and a second dielectric layer. A first dielectric layer is included between two adjacent gate layers among the gate layers. The tunnel layer, the charge trapping layer, the conductor layer, and the second dielectric layer penetrate the gate layers. The charge trapping layer is disposed between the tunnel layer and the gate layers, and the second dielectric layer is disposed between the conductor layer and the tunnel layer. Therefore, an erasing speed may be increased; the charge trapping layer may be repaired; the controllability of the gate layers may be increased.

Abstract: Methods and systems for scene recognition are provided. At least one dark region from an image is searched, and color for pixels of the at least one dark region is calculated. It is determined whether a proportion of low colorfulness pixels to the pixels of the at least one dark region is greater than a predefined threshold, wherein when the color information of the respective pixel is less than a specific level, the respective pixel is determined as low colorfulness. When the proportion of low colorfulness pixels to the pixels of the at least one dark region is greater than the predefined threshold, a scene corresponding to the image is not determined as a backlight scene.

Abstract: A method for managing cache memories includes providing a computerized system including a shared data storage system (CS) configured to interact with several local servers that serve applications using respective cache memories, and access data stored in the shared data storage system; providing cache data information from each of the local servers to the shared data storage system, the cache data information comprising cache hit data representative of cache hits of each of the local servers, and cache miss data representative of cache misses of each of the local servers; aggregating, at the shared data storage system, at least part of the cache hit and miss data received and providing the aggregated cache data information to one or more of the local servers; and at the local servers, updating respective one or more cache memories used to serve respective one or more applications based on the aggregated cache data information.

Abstract: A data writing method, and a memory control circuit unit and a memory storage apparatus using the method are provided. The method including: programming data to several memory cells on a first word line of the rewritable non-volatile memory module of the memory storage apparatus, and a first predetermined reading voltage is initially configured for the first word line. The data storing method further includes: adjusting the first predetermined reading voltage to obtain a first available reading voltage for the first word line, and applying the first available reading voltage to the first word line to read first page data. The storing method further includes: if the difference value between the first available reading voltage and the first predetermined reading voltage is larger than a predetermined threshold value, performing a protection operation for the first page data.