Patents by Inventor Yu-Hung Lin

Yu-Hung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097351
    Abstract: The present disclosure provides an antenna system, which includes a defected ground structure board and an antenna structure board. The defected ground structure board includes a first insulating plate and a defected ground structure layer, and the defected ground structure layer is disposed on the first insulating plate. The antenna structure board is disposed on the defected ground structure board. The antenna structure board includes at least one antenna body and a second insulating plate, the at least one antenna body is disposed on the second insulating plate, and the second insulating plate is disposed on the defected ground structure layer.
    Type: Application
    Filed: December 19, 2022
    Publication date: March 21, 2024
    Inventors: Hsin Hung LIN, Yu Shu TAI, Wei Chen CHENG
  • Publication number: 20240096830
    Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 21, 2024
    Inventors: Yu-Yi Huang, Yu-Hung Lin, Wei-Ming Wang, Chen Chen, Shih-Peng Tai, Kuo-Chung Yee
  • Publication number: 20240096781
    Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.
    Type: Application
    Filed: March 20, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
  • Patent number: 11935836
    Abstract: A semiconductor device includes a bridge and a first integrated circuit. The bridge is free of active devices and includes a first conductive connector. The first integrated circuit includes a substrate and a second conductive connector disposed in a first dielectric layer over the substrate. The second conductive connector is directly bonded to the first conductive connector. The second conductive connector includes conductive pads and first conductive vias and a second conductive via between the conductive pads. The second conductive via is not overlapped with the first conductive vias while the first conductive vias are overlapped with one another. A vertical distance between the second conductive via and the first conductive connector is larger than a vertical distance between each of the first conductive vias and the first conductive connector, and a sidewall of the first dielectric layer is substantially flush with a sidewall of the substrate.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Lin, An-Jhih Su, Der-Chyang Yeh, Shih-Guo Shen, Chia-Nan Yuan, Ming-Shih Yeh
  • Publication number: 20240085667
    Abstract: A photolithography projection lens, having a plurality of lens elements and a light diaphragm arranged among them, arranged along an optical axis, and comprising an object side and an image side respectively arranged at the front and rear ends of the plurality of lens elements; wherein: the diopters of the two lenses respectively near the object side and the image side must be positive; each of the lens elements is a single lens without cement; the angle between the chief rays at different image height positions and the optical axis is <1 degree, and the angle between the chief rays at different object height positions and the optical axis is <1 degree; and under the projection of 350˜450 nm wavelength light, it provide the imaging effect of precise magnification.
    Type: Application
    Filed: September 14, 2022
    Publication date: March 14, 2024
    Inventors: SHENG CHE WU, YU HUNG CHOU, YI HUA LIN, YUAN HUNG SU
  • Publication number: 20240088307
    Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Yu-Chih Huang, Chih-Hao Chang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20240087953
    Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: Yu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou
  • Publication number: 20240087974
    Abstract: An semiconductor package includes a redistribution structure, a first semiconductor device, a second semiconductor device, an underfill layer and an encapsulant. The first semiconductor device is disposed on and electrically connected with the redistribution structure, wherein the first semiconductor device has a first bottom surface, a first top surface and a first side surface connecting with the first bottom surface and the first top surface, the first side surface comprises a first sub-surface and a second sub-surface connected with each other, the first sub-surface is connected with the first bottom surface, and a first obtuse angle is between the first sub-surface and the second sub-surface.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Sheng Lin, Chin-Hua Wang, Shu-Shen Yeh, Chien-Hung Chen, Po-Yao Lin, Shin-Puu Jeng
  • Publication number: 20240088293
    Abstract: An n-type metal oxide semiconductor transistor includes a gate structure, two source/drain regions, two amorphous portions and a silicide. The gate structure is disposed on a substrate. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure, wherein at least one of the source/drain regions is formed with a dislocation. The two amorphous portions are respectively disposed in the two source/drain regions. The silicide is disposed on the two source/drain regions, wherein at least one portion of the silicide overlaps the two amorphous portions.
    Type: Application
    Filed: October 5, 2022
    Publication date: March 14, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ya Chiu, Ssu-I Fu, Chin-Hung Chen, Jin-Yan Chiou, Wei-Chuan Tsai, Yu-Hsiang Lin
  • Publication number: 20240089611
    Abstract: The present invention relates to a method of image fusion, which uses the brightness difference of the current frame and the previous frame to determine whether the pixel in a frame image is static or dynamic. If the current pixel is static, the previous corresponding pixel is superimposed onto the current pixel; if the current pixel is dynamic, the previous corresponding pixel is replaced with the current pixel.
    Type: Application
    Filed: September 7, 2023
    Publication date: March 14, 2024
    Inventors: Ping-Hung Yin, Yung-Ming Chou, Bo-Jia Lin, Yu-Sheng Liao
  • Patent number: 11929318
    Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Hao-Yi Tsai, Tsung-Hsien Chiang, Yu-Chih Huang, Chia-Hung Liu, Ban-Li Wu, Ying-Cheng Tseng, Po-Chun Lin
  • Publication number: 20240079267
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.
    Type: Application
    Filed: November 9, 2023
    Publication date: March 7, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Cheng SHIH, Tze-Liang LEE, Jen-Hung WANG, Yu-Kai LIN, Su-Jen SUNG
  • Patent number: 11913047
    Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: February 27, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yu-Fen Huang, Chen-Hung Hsu, Wen-Yang Lin, Yi-Wei Kuo, Shin-Yu Tsai
  • Patent number: 11916314
    Abstract: A mobile device includes a housing, a first radiation element, a second radiation element, a third radiation element, a first switch element, and a second switch element. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The first radiation element, the second radiation element, and the third radiation element are distributed over the housing. The first switch element is closed or open, so as to selectively couple the first radiation element to the third radiation element. The second switch element is closed or open, so as to selectively couple the second radiation element to the third radiation element. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.
    Type: Grant
    Filed: May 12, 2022
    Date of Patent: February 27, 2024
    Assignee: HTC Corporation
    Inventors: Cheng-Hung Lin, Szu-Po Wang, Chia-Te Chien, Chun-Chieh Wang, Kang-Ling Li, Chun-Hsien Lee, Yu-Chieh Chiu
  • Publication number: 20240047216
    Abstract: A method includes forming an etching mask over a first wafer. The etching mask covers an inner portion of the first wafer. A wafer edge trimming process is performed to trim an edge portion of the first wafer, with the etching mask protecting the inner portion of the first wafer from being etched. The edge portion forms a full ring encircling the inner portion of the first wafer. The method further includes removing the etching mask, and bonding the first wafer to a second wafer.
    Type: Application
    Filed: August 2, 2022
    Publication date: February 8, 2024
    Inventors: Wei-Ming Wang, Yu-Hung Lin, Shih-Peng Tai, Kuo-Chung Yee
  • Publication number: 20240014091
    Abstract: A semiconductor device includes an integrated circuit structure and a thermal pillar over the integrated circuit structure. The integrated circuit structure includes a semiconductor substrate including circuitry, a dielectric layer over the semiconductor substrate, an interconnect structure over the dielectric layer, and a first thermal fin extending through the semiconductor substrate, the dielectric layer, and the interconnect structure. The first thermal fin is electrically isolated from the circuitry. The thermal pillar is thermally coupled to the first thermal fin.
    Type: Application
    Filed: July 11, 2022
    Publication date: January 11, 2024
    Inventors: Wei-Ming Wang, Yu-Hung Lin, Shih-Peng Tai, Kuo-Chung Yee
  • Patent number: 11856971
    Abstract: The invention discloses a method for improving immunity in shrimps, by administering an extract of cocoa rind to a shrimp body to improve immunity of the shrimp body. The extract of cocoa rind is obtained by extracting a dried sample of cocoa rind by an aqueous ethanol solution with a concentration of ethanol being 90-98%. The dried sample of cocoa rind has a water content of 2-5%.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: January 2, 2024
    Assignee: NATIONAL PINGTUNG UNIVERSITY OF SCIENCE & TECHNOLOGY
    Inventors: Wen-Teng Cheng, Wan-Lin Tsai, Hsin-Wei Kuo, Yu-Fen Liu, Chin-Chyuan Chang, Yu-Hung Lin
  • Patent number: 11854874
    Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.
    Type: Grant
    Filed: November 2, 2020
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou
  • Patent number: 11848798
    Abstract: An array controlling system includes a database, a controlling center and an array device. The controlling center reads a plurality of data of the database. The array device includes a processing unit, a main bus and an array unit. The processing unit receives a command of the controlling center and converts the command into a communication data. The main bus is configured to transmit the communication data to the array unit. A plurality of array modules of the array unit are connected in series with each other through a serial bus, and sequentially receive the communication data. The processing unit controls each of the array modules according to the communication data. A plurality of sensing data of the array modules are collected to the processing unit. The processing unit returns the sensing data to the database or the controlling center to update the database.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: December 19, 2023
    Assignee: RHYMEBUS CORPORATION
    Inventors: Hsuan-Yu Huang, Shun-Han Ko, Yu-Hung Lin, Po-Chun Chiu, Hsien-Tang Jao
  • Patent number: D1018907
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: March 19, 2024
    Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.
    Inventors: Yun-Chien Lee, Yi-Ching Hsu, Pei-Yi Lin, Yu-Hung Su, Sheng-Yuan Huang, Chun-Fu Lin