Patents by Inventor Yu-Hung Lin

Yu-Hung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250149477
    Abstract: A photonic assembly includes: an electronic integrated circuits (EIC) die including a semiconductor substrate, semiconductor devices located on a horizontal surface of the semiconductor substrate, first dielectric material layers embedding first metal interconnect structures, a dielectric pillar structure vertically extending through each layer selected from the first dielectric material layers, a first bonding-level dielectric layer embedding first metal bonding pads, wherein a first subset of the first metal bonding pads has an areal overlap with the dielectric pillar structure in a plan view; and a photonic integrated circuits (PIC) die including waveguides, photonic devices, second dielectric material layers embedding second metal interconnect structures, a second bonding-level dielectric layer embedding second metal bonding pads, wherein the second metal bonding pads are bonded to the first metal bonding pads.
    Type: Application
    Filed: November 3, 2023
    Publication date: May 8, 2025
    Inventors: Yu-Hung Lin, Chih-Hao Yu, Wei-Ming Wang, Chen Chen, Chia-Hui Lin, Ren-Fen Tsui, Chen-Hua Yu
  • Publication number: 20250151381
    Abstract: The present disclosure describes a semiconductor device having fin structures with optimized fin pitches for substantially uniform S/D structures. The semiconductor device includes multiple fin structures on a substrate. The multiple fin structures have a first pitch and a second pitch in an alternate configuration and the second pitch is different from the first pitch. The semiconductor device further includes a gate structure on the multiple fin structures and a source/drain (S/D) structure adjacent to the gate structure and in contact with the multiple fin structures.
    Type: Application
    Filed: November 3, 2023
    Publication date: May 8, 2025
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hung LIN, Wei Hsin LIN, Hui-Hsuan KUNG, Yi-Lii HUANG
  • Publication number: 20250118612
    Abstract: A semiconductor package includes a photonic integrated circuit (PIC) die having a photonic layer, and an electronic integrated circuit (EIC) die bonded to the PIC die. The EIC die includes an optical region that allows the transmission of optical signals through the optical region towards the photonic layer, and a peripheral region outside of the optical region. The optical region includes optical concave/convex structures, a protection film and optically transparent material layers. The optical concave/convex structures are formed in the semiconductor structure. The protection film is conformally disposed over the optical concave/convex structures. The optically transparent material layers are disposed over the protection film and filling up the optical region. The peripheral region includes first bonding pads bonded to the photonic integrated circuit die, and via structures connected to the first bonding pads, wherein the protection film is laterally surrounding sidewalls of the via structures.
    Type: Application
    Filed: October 10, 2023
    Publication date: April 10, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen Chen, Yu-Hung Lin, Chih-Hao Yu, Wei-Ming Wang, Chia-Hui Lin, Shih-Peng Tai
  • Patent number: 12272613
    Abstract: A semiconductor device includes an integrated circuit structure and a thermal pillar over the integrated circuit structure. The integrated circuit structure includes a semiconductor substrate including circuitry, a dielectric layer over the semiconductor substrate, an interconnect structure over the dielectric layer, and a first thermal fin extending through the semiconductor substrate, the dielectric layer, and the interconnect structure. The first thermal fin is electrically isolated from the circuitry. The thermal pillar is thermally coupled to the first thermal fin.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: April 8, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Ming Wang, Yu-Hung Lin, Shih-Peng Tai, Kuo-Chung Yee
  • Publication number: 20250052966
    Abstract: A method of forming a semiconductor package is provided. The method includes forming a micro lens recessed from the top surface of a substrate. A concave area is formed between the surface of the micro lens and the top surface of the substrate. The method includes depositing a first dielectric material that fills a portion of the concave area using a spin coating process. The method includes depositing a second dielectric material that fills the remainder of the concave area and covers the top surface of the substrate using a chemical vapor deposition process. The method includes planarizing the second dielectric material. The method includes forming a bonding layer on the planarized second dielectric material and over the top surface of the substrate. The method includes bonding a semiconductor wafer to the substrate via the bonding layer.
    Type: Application
    Filed: August 10, 2023
    Publication date: February 13, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Yi HUANG, Yu-Hao KUO, Chiao-Chun CHANG, Jui-Hsuan TSAI, Yu-Hung LIN, Shih-Peng TAI, Jih-Churng TWU, Chen-Hua YU
  • Publication number: 20250031434
    Abstract: A method includes bonding a first semiconductor die and a second semiconductor die to a substrate, where a gap is disposed between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, performing a plasma treatment to dope top surfaces and sidewalls of each of the first semiconductor die and the second semiconductor die with a first dopant, where a concentration of the first dopant in the first sidewall decreases in a vertical direction from a top surface of the first semiconductor die towards a bottom surface of the first semiconductor die, and a concentration of the first dopant in the second sidewall decreases in a vertical direction from a top surface of the second semiconductor die towards a bottom surface of the second semiconductor die, and filling the gap with a spin-on dielectric material.
    Type: Application
    Filed: July 17, 2023
    Publication date: January 23, 2025
    Inventors: Yu-Hung Lin, Jih-Churng Twu, Su-Chun Yang, Shih-Peng Tai, Yu-Hao Kuo
  • Patent number: 12203646
    Abstract: A wrist-wearable electronic device comprising a house, a display, and a lens module. The lens module is coupled to a sidewall of the housing and can include a first light emitting element, a lens, and a first Frensel structure. The lens includes a body, a lower surface, and an upper surface. The first Frensel structure is disposed on the lower surface of the lens and is configured to disperse light generated by the first light emitting element into the body of the lens.
    Type: Grant
    Filed: May 28, 2024
    Date of Patent: January 21, 2025
    Assignee: Garmin International, Inc.
    Inventors: Cheng-Yu Tsai, Minhung Lee, Yu-Hung Lin, Yung-Lang Yang
  • Publication number: 20240404909
    Abstract: A method for forming a package structure is provided, wherein the method includes forming an interconnect structure in a substrate. The method also includes bonding a chip over the substrate and electrically connected to the interconnect structure. The method includes bonding a plurality of dies over the substrate and adjacent to the chip. The method also includes supplying a molding material to the gap between the chip and the dies, after which the method includes thinning down the substrate.
    Type: Application
    Filed: June 1, 2023
    Publication date: December 5, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Yu-Hung LIN, Shih-Peng TAI, Yu-Yi HUANG, Yu-Hao KUO
  • Publication number: 20240377972
    Abstract: A read voltage calibration method, a memory storage device, a memory control circuit unit are provided, including: reading, according to a first read command, a first physical unit based on a first read voltage level to obtain first data, and the first read voltage level is a default read voltage level corresponding to the first physical unit or a first voltage difference exists between the first read voltage level and the default read voltage level; decoding the first data to obtain first error bit information; reading, according to a second read command, the first physical unit based on a second read voltage level to obtain second data, and a second voltage difference exists between the second read voltage level and the default read voltage level; decoding the second data to obtain second error bit information; calibrating the default read voltage level according to the first and second error bit information.
    Type: Application
    Filed: June 16, 2023
    Publication date: November 14, 2024
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Szu-Wei Chen, Yu-Hung Lin, I-Sung Huang, Po-Cheng Su
  • Patent number: 12112808
    Abstract: A read voltage calibration method, a memory storage device, and a memory control circuit unit are provided. The read voltage calibration method includes: reading data from a first physical unit by using multiple read voltage levels; decoding the data to obtain multiple error evaluation parameters; determining a first vector distance parameter according to a first error evaluation parameter; determining multiple candidate read voltage levels according to the first vector distance parameter and a first read voltage level; determining a target read voltage level according to one of the candidate read voltage levels; and reading the data again from the first physical unit by using the target read voltage level.
    Type: Grant
    Filed: March 7, 2023
    Date of Patent: October 8, 2024
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Szu-Wei Chen, An-Cin Li, Yu-Hung Lin, Kai-Wei Tsou
  • Publication number: 20240332202
    Abstract: A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, and a second encapsulant. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die.
    Type: Application
    Filed: June 6, 2024
    Publication date: October 3, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Lin, Chih-Wei Wu, Chia-Nan Yuan, Ying-Ching Shih, An-Jhih Su, Szu-Wei Lu, Ming-Shih Yeh, Der-Chyang Yeh
  • Publication number: 20240319590
    Abstract: Optical devices and methods of manufacture are presented in which a first mask is utilized for multiple purposes. Some methods include depositing a first mask over a support material, forming a concave surface in the support material through the first mask, and bonding the first mask to a first bonding layer over an optical interposer.
    Type: Application
    Filed: March 20, 2023
    Publication date: September 26, 2024
    Inventors: Yu-Hung Lin, Yu-Yi Huang, Chih-Hao Yu, Yu-Ting Yen, Shih-Peng Tai
  • Publication number: 20240249778
    Abstract: A read voltage calibration method, a memory storage device, and a memory control circuit unit are provided. The read voltage calibration method includes: reading data from a first physical unit by using multiple read voltage levels; decoding the data to obtain multiple error evaluation parameters; determining a first vector distance parameter according to a first error evaluation parameter; determining multiple candidate read voltage levels according to the first vector distance parameter and a first read voltage level; determining a target read voltage level according to one of the candidate read voltage levels; and reading the data again from the first physical unit by using the target read voltage level.
    Type: Application
    Filed: March 7, 2023
    Publication date: July 25, 2024
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Szu-Wei Chen, An-Cin Li, Yu-Hung Lin, Kai-Wei Tsou
  • Patent number: 12033949
    Abstract: A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, and a second encapsulant. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die.
    Type: Grant
    Filed: October 5, 2022
    Date of Patent: July 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Lin, Chih-Wei Wu, Chia-Nan Yuan, Ying-Ching Shih, An-Jhih Su, Szu-Wei Lu, Ming-Shih Yeh, Der-Chyang Yeh
  • Publication number: 20240186252
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A semiconductor substrate is provided. A plurality of dielectric layers and a plurality of first conductive features in the dielectric layers are formed on the semiconductor substrate. At least one polymer layer and a plurality of second conductive features in the at least one polymer layer on the dielectric layers are formed. A plurality of conductive connectors are formed to electrically connect to the second conductive features. The semiconductor substrate, the dielectric layers and the at least one polymer layer are cut into a plurality of dies.
    Type: Application
    Filed: February 14, 2024
    Publication date: June 6, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Lin, An-Jhih Su, Der-Chyang Yeh, Shih-Guo Shen, Chia-Nan Yuan, Ming-Shih Yeh
  • Publication number: 20240170896
    Abstract: A composite mounting type electrical connector includes an insulating shell, a plurality of terminals and a plurality of shielding members. The plurality of terminals are arranged in two rows parallel to each other, and a plurality of shielding members are arranged between the two rows of terminals and separated from each other by a predetermined distance to form insulation. The two rows of terminals are soldered to a circuit board by surface mounting technology and dual in line package process respectively. The ground terminals in the two columns of terminals are commonly connected to a shield spacer to form a common ground structure. The power terminals in the two columns of terminals are commonly connected to another shielding member to form a parallel connecting structure. The shielding members produce a shielding effect between two rows of terminals, which can prevent crosstalk therebetween.
    Type: Application
    Filed: May 27, 2023
    Publication date: May 23, 2024
    Inventors: MING LUO, YUNG- CHANG LIN, YU-HUNG LIN, HUNG-TIEN CHANG, HSUAN HO CHUNG
  • Publication number: 20240153901
    Abstract: A first and second semiconductor device are bonded together using a bonding contact pad embedded within a bonding dielectric layer of the first semiconductor device and at least one bonding via embedded within a bonding dielectric layer of the second semiconductor device. The bonding contact pad extends a first dimension in a first direction perpendicular to the major surface of the first semiconductor device and a second dimension in a second direction parallel to the plane of the first semiconductor wafer, the second dimension being at least twice the first dimension. The bonding via extends a third dimension in the first direction and a fourth dimension in the second direction, the third dimension being at least twice the first dimension. The bonding contact pad and bonding via may be at least partially embedded in respective bonding dielectric layers in respective topmost dielectric layers of respective stacked interconnect layers.
    Type: Application
    Filed: January 9, 2023
    Publication date: May 9, 2024
    Inventors: Yu-Hung Lin, Han-Jong Chia, Wei-Ming Wang, Kuo-Chung Yee, Chen Chen, Shih-Peng Tai
  • Publication number: 20240142664
    Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.
    Type: Application
    Filed: February 12, 2023
    Publication date: May 2, 2024
    Inventors: Han-Yi CHANG, Chun-Han CHEN, Tsung-Kao HSU, Wei-che WANG, Yu-Hung LIN, Wan-Ying GAO, Li-Hao LIU
  • Publication number: 20240128178
    Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.
    Type: Application
    Filed: February 8, 2023
    Publication date: April 18, 2024
    Inventors: Yu-Hung LIN, Wei-Ming WANG, Su-Chun YANG, Jih-Churng TWU, Shih-Peng TAI, Kuo-Chung YEE
  • Publication number: 20240113034
    Abstract: A method for forming a semiconductor package is provided. The method includes forming a first alignment mark in a first substrate of a first wafer and forming a first bonding structure over the first substrate. The method also includes forming a second bonding structure over a second substrate of a second wafer and trimming the second substrate, so that a first width of the first substrate is greater than a second width of the second substrate. The method further includes attaching the second wafer to the first wafer via the first bonding structure and the second bonding structure, thinning the second wafer until a through-substrate via in the second substrate is exposed, and performing a photolithography process on the second wafer using the first alignment mark.
    Type: Application
    Filed: February 8, 2023
    Publication date: April 4, 2024
    Inventors: Yu-Hung LIN, Wei-Ming WANG, Chih-Hao YU, PaoTai HUANG, Pei-Hsuan LO, Shih-Peng TAI