Abstract: A retainer is disposed around a holding region 39 of a polygonal substrate WF in a top ring for holding the polygonal substrate WF with a surface to be polished facing downward. The retainer 30 includes a plurality of retainer main bodies 3 disposed around the holding region 39 independently along respective sides of the polygonal substrate WF. At least one of the plurality of retainer main bodies 3 includes a first securing surface (first surface 3a), a first opposed surface (second surface 3b), a second securing surface (third surface 3c), and a second opposed surface (fourth surface 3d).

Abstract: Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

Abstract: Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

Abstract: A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method comprises: rotating a polishing table supporting a polishing pad; and polishing the substrate by pressing the substrate against a polishing surface of the polishing pad by a polishing head, wherein polishing the substrate includes: an oscillation polishing process of polishing the substrate while causing the polishing head to oscillate along the polishing surface; and a static polishing process of polishing the substrate with the oscillation of the polishing head stopped, the static polishing process is performed after the oscillation polishing process, and the static polishing process comprises determining a static polishing end point which is a point in time at which a rate of change of torque for rotating the polishing table has reached a change-rate threshold value.

Abstract: Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Abstract: The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

Abstract: A substrate processing apparatus for processing a substrate includes a setting device that sets a plurality of recipe items including operation conditions of the substrate processing apparatus and a recipe generating device that acquires a plurality of recipe models obtained by changing values of the plurality of recipe items and experimenting or simulating a processing result of the substrate and analyzes the plurality of recipe models to generate a recipe, the recipe generating device combining a part or all of the plurality of recipe models to generate the recipe such that a calculation value of a processing result of the substrate by the recipe satisfies a predetermined condition.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

Abstract: Provided is a technique capable of suppressing a shortage of a light amount of a reflected light from wiring patterns even when a film thickness of a film is thick. A film thickness measurement apparatus 30 is applicable to a polishing apparatus 10 for polishing a film 202 of a substrate 200. The film 202 includes a plurality of wiring patterns. The film thickness measurement apparatus 30 includes a light emitter 43 configured to project an emitted light L1 during polishing of the film by the polishing apparatus, an optical condenser 44 configured to condense the emitted light projected from the light emitter to provide a predetermined spot size D and project the light onto the film, and a light receiver 45 configured to receive a reflected light L2 reflected from the film. The predetermined spot size is smaller than a minimum width of respective wiring patterns constituting the plurality of wiring patterns.

Abstract: An apparatus and a method which can perform different processes, such as polishing and cleaning, on a surface of a substrate, such as a wafer, with a single processing head, and can process the surface of the substrate efficiently are disclosed. The apparatus includes: a substrate holder configured to hold a substrate and rotate the substrate; and a processing head configured to bring scrubbing tapes into contact with a first surface of the substrate to process the first surface. The processing head includes: pressing members arranged to press the scrubbing tapes against the first surface of the substrate; position switching devices configured to be able to switch positions of the pressing members between processing positions and retreat positions; tape feeding reels configured to feed the scrubbing tapes, respectively; and tape take-up reels configured to take up the scrubbing tapes, respectively.

Abstract: A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method comprises: rotating a polishing table supporting a polishing pad; and polishing the substrate by pressing the substrate against a polishing surface of the polishing pad by a polishing head, wherein polishing the substrate includes: an oscillation polishing process of polishing the substrate while causing the polishing head to oscillate along the polishing surface; and a static polishing process of polishing the substrate with the oscillation of the polishing head stopped, the static polishing process is performed after the oscillation polishing process, and the static polishing process comprises determining a static polishing end point which is a point in time at which a rate of change of torque for rotating the polishing table has reached a change-rate threshold value.

Abstract: Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

Abstract: A method and an apparatus which can efficiently polish an entirety of a back surface, including an outermost area thereof, of a substrate while the back surface of the substrate faces downward are disclosed. The method includes rotating a substrate by rotating a plurality of rollers about their respective own axes while the rollers contact a periphery of the substrate with a back surface of the substrate facing downward; and polishing an entirety of the back surface of the substrate by moving a polishing tool relative to the substrate while supplying a liquid onto the back surface of the substrate and while placing the polishing tool in contact with the back surface of the substrate, the polishing tool being located at a lower side of the substrate.

Abstract: A polishing method capable of polishing a substrate, such as a wafer, with low running costs is disclosed. A polishing method includes: rotating a substrate while holding a back-side surface of the substrate with a vacuum suction stage; rotating a polishing head holding a plurality of polishing tools; and polishing a front-side surface of the substrate by pressing the plurality of polishing tools, which are rotating, against the front-side surface of the substrate. The front-side surface is a surface on which interconnect patterns are to be formed.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: An apparatus which can remove particles, such as polishing debris, from a back surface with high removal efficiency is provided. The apparatus includes: a substrate holder configured to rotate the substrate while holding the substrate with the back surface facing upward; a scrub cleaning tool configured to be rotatable; a two-fluid nozzle disposed above the substrate holder; and a housing defining a cleaning chamber in which the substrate holder, the scrub cleaning tool, and the two-fluid nozzle are located.

Abstract: Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Abstract: There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

Abstract: There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.