Abstract: There is disclosed a method of polishing a peripheral portion of a wafer having a hard film with use of an abrasive film while preventing damage to the abrasive film. The polishing method uses an abrasive film including a base film made of polyimide, a binder made of polyimide, and abrasive grains held by the binder. The polishing method includes: rotating a silicon substrate having a surface on which a silicon carbide film is formed; and removing the silicon carbide film from a peripheral portion of the silicon substrate by pressing the abrasive film at a low force against the silicon carbide film on the peripheral portion of the silicon substrate.

Abstract: A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.

Abstract: There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

Abstract: A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.

Abstract: There is disclosed a method of polishing a peripheral portion of a wafer having a hard film with use of an abrasive film while preventing damage to the abrasive film. The polishing method uses an abrasive film including a base film made of polyimide, a binder made of polyimide, and abrasive grains held by the binder. The polishing method includes: rotating a silicon substrate having a surface on which a silicon carbide film is formed; and removing the silicon carbide film from a peripheral portion of the silicon substrate by pressing the abrasive film at a low force against the silicon carbide film on the peripheral portion of the silicon substrate.

Abstract: A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.

Abstract: There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.

Abstract: There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.

Abstract: A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.

Abstract: A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.

Abstract: A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.

Abstract: A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.

Abstract: The present invention provides an apparatus for heating or cooling a polishing surface. This apparatus includes a heat exchanger arranged so as to face the polishing surface when the workpiece is polished. The heat exchanger includes a medium passage through which a heat-exchanging medium flows, and a bottom surface facing the polishing surface. At least a part of the bottom surface is inclined with an upward gradient above the polishing surface such that a polishing liquid on the polishing surface generates a lift exerted on the bottom surface during movement of the polishing surface.

Abstract: A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.

Abstract: The present invention provides an apparatus for heating or cooling a polishing surface. This apparatus includes a heat exchanger arranged so as to face the polishing surface when the workpiece is polished. The heat exchanger includes a medium passage through which a heat-exchanging medium flows, and a bottom surface facing the polishing surface. At least a part of the bottom surface is inclined with an upward gradient above the polishing surface such that a polishing liquid on the polishing surface generates a lift exerted on the bottom surface during movement of the polishing surface.

Abstract: A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

Abstract: A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

Abstract: A method of polishing substrates enables the size of a polishing table to be reduced. A surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface. The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

Abstract: A polishing apparatus can strictly control the degree of material removal by providing close control over the operating temperature in the polishing table (12). The polishing apparatus has a polishing table (12) and a workpiece holder (14) for pressing a workpiece (W) towards the polishing table (12). The polishing table (12) has a polishing section (30) or a polishing tool attachment section at a surface thereof and a thermal medium passage (32) formed along the surface. The thermal medium passage (32) has a plurality of temperature adjustment passages provided respectively in a plurality of temperature adjustment regions which are formed by radially dividing a surface area of the polishing table (12).