Abstract: The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: An apparatus which can polish an entirety of a surface of a substrate, such as a wafer, is disclosed. The apparatus includes a substrate holder configured to hold a substrate and rotate the substrate; and a polishing head configured to rub a polishing tool against a first surface of the substrate to polish the first surface. The substrate holder includes a plurality of rollers which can contact a periphery of the substrate. The plurality of rollers are rotatable about their respective own axes.

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that perfo

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A substrate processing apparatus includes: a first polishing head configured to polish a first surface of a substrate by sliding a polishing tool on the first surface; a second polishing head configured to polish the first surface of the substrate by sliding a polishing tool on the first surface, the second polishing head having a smaller diameter than a diameter of the first polishing head; and a substrate support mechanism configured to support the substrate by a fluid pressure at positions corresponding to the first polishing head and the second polishing head, the substrate support mechanism being configured to support the substrate from a second surface of the substrate opposite to the first surface.

Abstract: An apparatus and a method which can perform different processes, such as polishing and cleaning, on a surface of a substrate, such as a wafer, with a single processing head, and can process the surface of the substrate efficiently are disclosed. The apparatus includes: a substrate holder configured to hold a substrate and rotate the substrate; and a processing head configured to bring scrubbing tapes into contact with a first surface of the substrate to process the first surface. The processing head includes: pressing members arranged to press the scrubbing tapes against the first surface of the substrate; position switching devices configured to be able to switch positions of the pressing members between processing positions and retreat positions; tape feeding reels configured to feed the scrubbing tapes, respectively; and tape take-up reels configured to take up the scrubbing tapes, respectively.

Abstract: A method and an apparatus which can efficiently polish an entirety of a back surface, including an outermost area thereof, of a substrate while the back surface of the substrate faces downward are disclosed. The method includes rotating a substrate by rotating a plurality of rollers about their respective own axes while the rollers contact a periphery of the substrate with a back surface of the substrate facing downward; and polishing an entirety of the back surface of the substrate by moving a polishing tool relative to the substrate while supplying a liquid onto the back surface of the substrate and while placing the polishing tool in contact with the back surface of the substrate, the polishing tool being located at a lower side of the substrate.

Abstract: A substrate processing apparatus for processing a substrate includes a setting device that sets a plurality of recipe items including operation conditions of the substrate processing apparatus and a recipe generating device that acquires a plurality of recipe models obtained by changing values of the plurality of recipe items and experimenting or simulating a processing result of the substrate and analyzes the plurality of recipe models to generate a recipe, the recipe generating device combining a part or all of the plurality of recipe models to generate the recipe such that a calculation value of a processing result of the substrate by the recipe satisfies a predetermined condition.

Abstract: An apparatus which can remove particles, such as polishing debris, from a back surface with high removal efficiency is provided. The apparatus includes: a substrate holder configured to rotate the substrate while holding the substrate with the back surface facing upward; a scrub cleaning tool configured to be rotatable; a two-fluid nozzle disposed above the substrate holder; and a housing defining a cleaning chamber in which the substrate holder, the scrub cleaning tool, and the two-fluid nozzle are located.

Abstract: A polishing method capable of polishing a substrate, such as a wafer, with low running costs is disclosed. A polishing method includes: rotating a substrate while holding a back-side surface of the substrate with a vacuum suction stage; rotating a polishing head holding a plurality of polishing tools; and polishing a front-side surface of the substrate by pressing the plurality of polishing tools, which are rotating, against the front-side surface of the substrate. The front-side surface is a surface on which interconnect patterns are to be formed.

Abstract: A method for fabricating an abrasive firm includes preparing a base film, coating the base film with a first paint which contains no abrasive grain but contains a binder resin, and drying the paint to form a first layer. The method further includes coating the first layer with a second paint which contains the abrasive grains and the binder resin, and drying the paint to form a second layer. The method further includes heating the first layer and the second layer for imidization.

Abstract: An apparatus which can polish an entirety of a surface of a substrate, such as a wafer, is disclosed. The apparatus includes a substrate holder configured to hold a substrate and rotate the substrate; and a polishing head configured to rub a polishing tool against a first surface of the substrate to polish the first surface. The substrate holder includes a plurality of rollers which can contact a periphery of the substrate. The plurality of rollers are rotatable about their respective own axes.

Abstract: A polishing pad for polishing a workpiece to a mirror finish is attached to a rotatable polishing table of a chemical mechanical polishing apparatus. The workpiece, such as a metal body, is held by a carrier and pressed against the polishing pad. This polishing pad includes: an elastic pad having a polishing surface; a deformable base layer that supports the elastic pad; and an adhesive layer that joins the elastic pad to the base layer.

Abstract: A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.

Abstract: There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.

Abstract: The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

Abstract: There is disclosed a substrate processing apparatus which is capable of detecting whether a substrate, such as a wafer, supported by a fluid is properly present in a predetermined processing position or not. The substrate processing apparatus includes at least one distance sensor configured to measure a distance between a scrubber and a hydrostatic support structure; and a processing controller configured to calculate a gap between the hydrostatic support structure and the surface of the substrate from a measured value of the distance and determine whether the gap falls within a predetermined range or not.