Patents by Inventor Yu Ping

Yu Ping has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240169167
    Abstract: The present disclosure provides a method for anti-tampering apparatus servicing data implemented by a calculation device connected to a target device, the method comprising: identifying a contract identification code and obtaining a contract package file and a contract authentication code from at least one remote device; obtaining a microservice file corresponding to the target device from the remote device when a device embedded code of the calculation device is matching the contract authentication code; performing the microservice file to enable the target device according to the contract package file and generate an execution report; publishing the execution report to the remote device to obtain an acceptance certification code; and combining and hashing the device embedded code, the contract authentication code and the acceptance certification code to generate a hash value, and sending the hash value to a blockchain.
    Type: Application
    Filed: December 22, 2022
    Publication date: May 23, 2024
    Inventors: Min-Hao LI, Yu-Chiao WANG, Ya-Ping LEE, Wei-Der CHUNG, Jhy-Ping WU
  • Publication number: 20240169682
    Abstract: Aspects of the invention include techniques for intimacy-based masking of three dimensional (3D) face landmarks within a metaverse. A non-limiting example method includes determining a degree of intimacy R between a first user and a second user responsive to a first avatar of the first user being observed by a second avatar of the second user in a virtual environment. An initial set of M landmarks of a feature of the first avatar is determined and N landmarks are randomly selected from M for masking. The N landmarks are replaced with random noise sampled with a unit normal distribution to define a set of noised landmarks X that are then iteratively denoised to define a set of denoised landmarks D. A masked version of the first avatar is presented to the second user by modifying the feature of the first avatar with the set of denoised landmarks D.
    Type: Application
    Filed: November 21, 2022
    Publication date: May 23, 2024
    Inventors: Xiao Feng Ji, Yu Hong Li, Jian Jun Wang, Yuan Jin, Li ping Wang
  • Publication number: 20240162401
    Abstract: A method for fabricating a micro display device includes the steps of providing a wafer comprising a first area, a second area, and a third area, forming first bonding pads on the first area, forming second bonding pads on the second area, and forming third bonding pads on the third area. Preferably, the first bonding pads and the second bonding pads are made of different materials and the first bonding pads and the third bonding pads are made of different materials.
    Type: Application
    Filed: December 9, 2022
    Publication date: May 16, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chuan-Lan Lin, Yu-Ping Wang, Chien-Ting Lin, Chun-Ting Yeh
  • Publication number: 20240161818
    Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.
    Type: Application
    Filed: November 30, 2022
    Publication date: May 16, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang, Li-Ping Huang, Yu-Fang Chen, Chun-Yen Tseng, Tzu-Feng Chang, Chun-Chieh Chang
  • Publication number: 20240152187
    Abstract: A foldable electronic device including a first body, a second body, a hinge module, and a cover is provided. The hinge module is connected to the first body and the second body, such that the first body and the second body are rotated relatively to be folded or unfolded via the hinge module. The hinge module has a protruding rod eccentric to a rotation center of the hinge module. The cover is pivoted to the second body and located on a moving path of the protruding rod. The hinge module drives the cover to be rotated relative to the second body via the protruding rod.
    Type: Application
    Filed: October 24, 2023
    Publication date: May 9, 2024
    Applicant: Acer Incorporated
    Inventors: Chun-Hung Wen, Chun-Hsien Chen, Hui-Ping Sun, Wen-Neng Liao, Yu-Ming Lin, Kuan-Lin Chen
  • Publication number: 20240150652
    Abstract: The disclosure relates to a quantum dot structure. The quantum dot structure includes a quantum dot and a cloud-like shell covering a portion of the quantum dot and having an irregular outer surface. The quantum dot includes: a core; a first shell discontinuously around a core surface of the core; and a second shell between the core and the first shell and encapsulating the core surface of the core, wherein the second shell has an irregular outer surface.
    Type: Application
    Filed: October 31, 2023
    Publication date: May 9, 2024
    Inventors: Pei Cong YAN, Chia-Chun HSIEH, Huei Ping WANG, Hung-Chun TONG, Yu-Chun LEE
  • Publication number: 20240149057
    Abstract: A device for treating a user's skin using plasma is provided. The device comprises a plasma generation assembly and a power supply. The plasma generation assembly comprises a discharge electrode including a first surface; a first dielectric material layer provided on the first surface of the discharge electrode and the first surface, a ground electrode surrounding the discharge electrode, and an insulation member spacing around the discharge electrode from the ground electrode. The power supply configured to apply power to the plasma generation assembly so that plasma is generated from the first surface of the discharge electrode to the ground electrode and between the first dielectric material layer and the user's skin.
    Type: Application
    Filed: November 4, 2022
    Publication date: May 9, 2024
    Inventors: HUI-FANG LI, YU-TING LIN, CHUN-HAO CHANG, CHIH-TUNG LIU, CHUN-PING HSIAO, YU-PIN CHENG
  • Patent number: 11979479
    Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.
    Type: Grant
    Filed: January 16, 2023
    Date of Patent: May 7, 2024
    Assignees: Chung Yuan Christian University, KGI Securities Co. Ltd.
    Inventors: Yu-Kuen Lai, Chao-Lin Wang, He-Ping Li, Cheng-Han Chuang, Kai-Po Chang
  • Publication number: 20240139337
    Abstract: The present disclosure relates to a method for treating a cancer and/or cancer metastasis in a subject comprising administering to the subject irinotecan loaded in a mesoporous silica nanoparticle. The present disclosure also provides a conjugate comprising an agent loaded in a mesoporous silica nanoparticle (MSN) defining at least one pore and having at least one functional group on a sidewall of the at least one pore.
    Type: Application
    Filed: November 2, 2022
    Publication date: May 2, 2024
    Inventors: Cheng-Hsun WU, SI-HAN WU, YI-PING CHEN, RONG-LIN ZHANG, CHUNG-YUAN MOU, Yu-Tse LEE
  • Publication number: 20240137431
    Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.
    Type: Application
    Filed: January 16, 2023
    Publication date: April 25, 2024
    Applicants: Chung Yuan Christian University, KGI Securities Co. Ltd.
    Inventors: Yu-Kuen Lai, Chao-Lin Wang, He-Ping Li, Cheng-Han Chuang, Kai-Po Chang
  • Patent number: 11968910
    Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, forming an etch stop layer on the MTJ stack, forming a first spin orbit torque (SOT) layer on the etch stop layer, and then patterning the first SOT layer, the etch stop layer, and the MTJ stack to form a MTJ.
    Type: Grant
    Filed: October 14, 2021
    Date of Patent: April 23, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hung-Chan Lin, Yu-Ping Wang, Chien-Ting Lin
  • Patent number: 11968911
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ stack; forming a first hard mask on the first SOT layer; and using a second hard mask to pattern the first hard mask, the first SOT layer, and the MTJ stack to form a MTJ.
    Type: Grant
    Filed: November 3, 2021
    Date of Patent: April 23, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hung-Chan Lin, Yu-Ping Wang, Chien-Ting Lin
  • Publication number: 20240130141
    Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 18, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Ya-Huei Tsai, Rai-Min Huang, Yu-Ping Wang, Hung-Yueh Chen
  • Publication number: 20240128635
    Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.
    Type: Application
    Filed: December 24, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Ping Chiang, Chao-Wen Shih, Shou-Zen Chang, Albert Wan, Yu-Sheng Hsieh
  • Publication number: 20240117342
    Abstract: An construction method of an embryonic chromosome signal library is provided. The construction method comprises obtaining an embryo and performing whole-genome amplification and next-generation sequencing to obtain a first chromosome signal; mapping the first chromosome signal to a chromosome reference signal to obtain a second chromosome signal; dividing the second chromosome signal within a predetermined interval range to obtain a third chromosome signal; and performing a regression correction on the sequencing read count (RC) of the third chromosome signal to obtain an embryonic chromosome signal library. Furthermore, a detection method and system of embryonic chromosomes are also provided. Thereby, the information comparison of the embryo chromosome signal library is used to determine whether the pre-implantation embryo is abnormal or not to achieve pre-implantation chromosome screening of pre-implantation embryos.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 11, 2024
    Inventors: LI-JEN SU, SHAO-PING WENG, YU-YU YEN, LI-CHING WU, HUI-YIN CHIU, JUI-HUNG KAO
  • Patent number: 11957064
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 11956973
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer; and patterning the second SOT layer and the passivation layer.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hung-Chan Lin, Yu-Ping Wang
  • Publication number: 20240112323
    Abstract: A method for detecting defects on a wafer including the steps of obtaining a reference image of a chip pattern formed on a reference wafer, using a computer algorithm to analyze the reference image to produce a division map for the chip pattern; setting respective thresholds for divisions of the division map, obtaining a comparison data between a test image of the chip pattern formed on a test wafer and the reference image, using the division map and the thresholds to examine the comparison data to identify a defect in the test image.
    Type: Application
    Filed: November 17, 2022
    Publication date: April 4, 2024
    Applicant: United Semiconductor (Xiamen) Co., Ltd.
    Inventors: Yu Peng Hong, QINGRONG CHEN, Kai Ping Huang, Chin-Chun Huang, WEN YI TAN
  • Patent number: 11950513
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.
    Type: Grant
    Filed: July 5, 2022
    Date of Patent: April 2, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Wei Chen, Po-Kai Hsu, Yu-Ping Wang, Hung-Yueh Chen
  • Patent number: D1025979
    Type: Grant
    Filed: June 14, 2022
    Date of Patent: May 7, 2024
    Assignee: Dell Products L.P.
    Inventors: Iven Dieterle, Ian Li, Jihun Yeom, Hsuan-Ping Weng, Yu-Hsuan Chiu