Patents by Inventor Yu Ping

Yu Ping has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12274180
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.
    Type: Grant
    Filed: March 17, 2023
    Date of Patent: April 8, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Publication number: 20250113742
    Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.
    Type: Application
    Filed: December 12, 2024
    Publication date: April 3, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Yu-Ping Wang
  • Patent number: 12268098
    Abstract: A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the array region includes a magnetic random access memory (MRAM) region and a logic region and the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.
    Type: Grant
    Filed: December 4, 2023
    Date of Patent: April 1, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang, Yu-Ruei Chen
  • Publication number: 20250107454
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.
    Type: Application
    Filed: December 11, 2024
    Publication date: March 27, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
  • Patent number: 12262544
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer, and patterning the second SOT layer and the passivation layer.
    Type: Grant
    Filed: March 4, 2024
    Date of Patent: March 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hung-Chan Lin, Yu-Ping Wang
  • Patent number: 12262647
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: March 1, 2024
    Date of Patent: March 25, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 12256556
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a passivation layer around the MTJ, and a second SOT layer on the first SOT layer and the passivation layer. Preferably, a top surface of the passivation layer is lower than a top surface of the first SOT layer.
    Type: Grant
    Filed: March 4, 2024
    Date of Patent: March 18, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hung-Chan Lin, Yu-Ping Wang
  • Publication number: 20250088589
    Abstract: An interactive system combines an automated voice mechanism with a visual feedback mechanism. A first terminal device and a telecommunications server mutually transmit messages through a public switched telephone network. The first terminal device can send an input message to the telecommunications server and receive a voice feedback message from the telecommunications server. The telecommunications server can generate a processing message based on the input message and transmit the processing message to an information management server which based on the processing message's content, through an internet sends a forward message to an information distribution server which based on the forward message's content, sends a control message to a second terminal device. The second terminal device transmits a request message to a picture content management server according to the forward message to obtain a picture feedback message returned by the picture content management server.
    Type: Application
    Filed: August 28, 2024
    Publication date: March 13, 2025
    Applicant: Dynalab Global Pte. Ltd.
    Inventors: Chen-Yin Lee, Yu-Ping Wei
  • Patent number: 12250833
    Abstract: A method for manufacturing semiconductor device structure includes providing a substrate having a surface; forming a first gate structure on the surface; forming a second gate structure on the surface; forming a first well region in the substrate and between the first gate structure and the second gate structure; forming a conductive contact within a trench between the first gate structure and the second gate structure; forming a first structure in the first well region, wherein the first structure tapers away from a bottom portion of the conductive contact.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: March 11, 2025
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Yu-Ping Chen, Chun-Shun Huang
  • Patent number: 12241964
    Abstract: This document describes techniques and systems related to tracking different sections of articulated vehicles. A vehicle uses a radar system that can discern between unarticulated vehicles and articulated vehicles, which by definition have multiple sections that can pivot in different directions for turning or closely following a curve. The radar system obtains detections indicative of another vehicle traveling nearby. When the detections indicate the other vehicle is articulated, the radar system tracks each identifiable section, rather than tracking all the sections together. A bounding box is generated for each identifiable section; the radar system separately and concurrently monitors a velocity of each bounding box. The multiple bounding boxes that are drawn enable the radar system to accurately track each connected section of the articulated vehicle, including to detect whether any movement occurs between two connected sections, for accurately localizing the vehicle when driving.
    Type: Grant
    Filed: February 21, 2022
    Date of Patent: March 4, 2025
    Assignee: Aptiv Technologies AG
    Inventors: Susan Yu-Ping Chen, Jan K. Schiffmann
  • Publication number: 20250058286
    Abstract: A moisture-permeable composite membrane is manufactured by the step of subjecting a mixture to a crosslinking treatment. The mixture contains a polyisoprene, a polyurethane with a polar functional group, a crosslinking agent, and a vulcanizing agent. In the mixture, a weight ratio of the polyurethane with the polar functional group to the polyisoprene ranges from 1:0.55 to 1:6.60. A method for manufacturing the moisture-permeable composite membrane is also provided.
    Type: Application
    Filed: January 4, 2024
    Publication date: February 20, 2025
    Inventors: Kuo-Chin CHEN, Sung-Yun HUANG, Li-Hsun CHANG, Chia-Lin CHEN, Shu-Ling LIN, Yu-Ping CHUANG
  • Patent number: 12232309
    Abstract: A capacitor includes cup-shaped lower electrodes disposed on a substrate, a capacitor dielectric layer conformally covering inner surfaces and outer surfaces of the cup-shaped lower electrodes, and a support layer disposed between outer surfaces of the cup-shaped lower electrodes to connect the cup-shaped lower electrodes. The capacitor further includes an annealed oxide layer, which is interposed between the inner surfaces of the cup-shaped lower electrodes and the capacitor dielectric layer, and is also interposed between a portion of the outer surfaces of the cup-shaped lower electrodes and the capacitor dielectric layer. A method for forming the capacitor is also provided.
    Type: Grant
    Filed: February 4, 2022
    Date of Patent: February 18, 2025
    Assignee: WINBOND ELECTRONICS CORP.
    Inventors: Yu-Ping Hsiao, Cheol-Soo Park, Chun-Hung Cheng, Wei-Chieh Chuang, Wei-Chao Chou, Yen-Min Juan
  • Publication number: 20250048936
    Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.
    Type: Application
    Filed: October 17, 2024
    Publication date: February 6, 2025
    Applicant: United Microelectronics Corp.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Chen-Yi Weng, Jing-Yin Jhang, Yu-Ping Wang, Hung-Yueh Chen
  • Publication number: 20250048648
    Abstract: A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a magnetic tunneling junction (MTJ) on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes metal and the blocking layer includes a grid line pattern according to a top view.
    Type: Application
    Filed: October 16, 2024
    Publication date: February 6, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Jia-Rong Wu, I-Fan Chang, Rai-Min Huang, Ya-Huei Tsai, Yu-Ping Wang
  • Publication number: 20250040149
    Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a substrate having a first active region, a second active region, and a word line connecting region between the first active region and the second active region, a first gate pattern extending along a first direction from the first active region to the second active region, a second gate pattern extending along the first direction from the first active region to the second active region, a first magnetic tunneling junction (MTJ) between the first gate pattern and the second pattern and within the word line connecting region, and a second MTJ between the first gate pattern and the second gate pattern in the first active region. Preferably, top surfaces of the first MTJ and the second MTJ are coplanar.
    Type: Application
    Filed: October 16, 2024
    Publication date: January 30, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ya-Huei Tsai, Rai-Min Huang, Yu-Ping Wang, Hung-Yueh Chen
  • Publication number: 20250035718
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, in which the MTJ includes a pinned layer on the substrate, a reference layer on the pinned layer, a barrier layer on the reference layer, and a free layer on the barrier layer. Preferably, the free layer and the barrier layer have same width and the barrier layer and the reference layer have different widths.
    Type: Application
    Filed: October 15, 2024
    Publication date: January 30, 2025
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen -Yi Weng, Che-Wei Chang, Si-Han Tsai, Ching-Hua Hsu, Jing-Yin Jhang, Yu-Ping Wang
  • Patent number: 12207564
    Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic tunnel junction (MTJ) region and an edge region, forming an first inter-metal dielectric (IMD) layer on the substrate, and then forming a first MTJ and a second MTJ on the first IMD layer, in which the first MTJ is disposed on the MTJ region while the second MTJ is disposed on the edge region. Next, a second IMD layer is formed on the first MTJ and the second MTJ.
    Type: Grant
    Filed: July 10, 2023
    Date of Patent: January 21, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Yu-Ping Wang
  • Publication number: 20250017312
    Abstract: A shoe includes a shoe body, a power supply unit, a sensing unit and a control unit. The power supply unit is disposed in the shoe body and is configured to provide electric power. The sensing unit and the control unit are electrically connected to the power supply unit for receiving the electric power therefrom. The sensing unit is disposed in the shoe body and is configured to continuously measure a distance to a ground. The control unit is configured to communicate with the sensing unit, to calculate a statistical value of a plurality of measured distances that are measured by the sensing unit within a predetermined period, to obtain a comparison result by comparing the statistical value with a predetermined standard, and to determine that the ground is uneven in response to determining that the comparison result is greater than a predetermined value.
    Type: Application
    Filed: July 3, 2024
    Publication date: January 16, 2025
    Applicant: POU CHEN CORPORATION
    Inventors: Yu-Ping TSENG, Liang-Chia TSENG
  • Patent number: 12201032
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on a first sidewall of the MTJ, and a second spacer on a second sidewall of the MTJ. Preferably, the first spacer and the second spacer are asymmetric, the first spacer and the second spacer have different heights, and a top surface of the MTJ includes a reverse V-shape.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: January 14, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Ying-Cheng Liu, Yi-An Shih, Yi-Hui Lee, Chen-Yi Weng, Chin-Yang Hsieh, I-Ming Tseng, Jing-Yin Jhang, Yu-Ping Wang
  • Patent number: D1061122
    Type: Grant
    Filed: July 11, 2023
    Date of Patent: February 11, 2025
    Assignee: KONINKLIJKE PHILIPS N.V.
    Inventors: Rizki Tarisa, Nicolas Raymond Guy Hubert, Yu Ping Cheng