Abstract: The disclosure provides a bolt including a main body, a head portion and a thread portion. The main body has a central axis. The head portion connects the main body. The thread portion is connected to the main body and runs around the central axis. The thread portion has a bearing surface facing toward the head portion. The bearing surface is a continuous curved surface or has an inflection point. The bearing surface includes a concave curved surface, a convex curved surface and a flank surface. The concave curved surface connects the main body. The convex curved surface is located further away from the main body than the concave curved surface. One side of the convex curved surface connects the concave curved surface, and another side of the convex curved surface connects the flank surface.

Abstract: A face recognition monitoring system based on spectrum and multi-band fusion, including a spectrum camera, a first module for acquiring a face spectral image, a second module for preprocessing data of the face spectral image, a face spectral image database and a third module for recognizing the face spectral image. The spectrum camera includes an optical lens and a silicon-based detector. The silicon-based detector includes a photoelectric conversion substrate and a filter film arranged thereon. The filter film includes N units each including a visible spectrum sensing area, a near-infrared spectral image sensing area and a RGGB image acquisition area. The N units cover all pixels on the photoelectric conversion substrate. A recognition method using the above system is also provided.

Abstract: A fingerprint identification system for a mobile phone and an identification method. The system includes a fingerprint collection module, a spectral chip, a data storage module and an identification module. The fingerprint collection module is arranged under a mobile phone screen. The mobile phone screen provides a light source to illuminate a fingerprint. The spectral chip is configured to modulate an incident spectrum, and convert an optical signal into an electrical signal to be amplified and converted into a digital signal or code for output. A finger reflection spectral data and a fingerprint image data are collected by inversion of an optical signal intensity information and a pixel location information. The data storage module is configured to store reflection spectral data and fingerprint image data of a real finger input in advance. The identification module is configured to compare the collected data with the pre-stored data.

Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

Abstract: A desiccant wheel is provided to be rotatable. Through the body of the wheel or a surface adsorbent, water vapor in humid air flow is adsorbed. By passing a high-temperature air flow through the wheel, the body or surface coating is regenerated with moisture removed. Along a cross-section radial, the wheel is divided into different areas. The body has three-dimensionally inter-connected pores. The pores can be of different types. The wheel is a complete concentric cylinder or a concentric cylinder comprising equal or unequal sectors. The equal or unequal sectors are separated with each other. The wheel can rotate at a fixed speed for continually repeating a process of adsorbing, transiting, and regenerating. Thereby, drying can be carried out without causing physical or chemical change to heat-sensitive material, which also improves drying efficiency, reduces size, lowers power consumption, and helps in carbon reduction for industry.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, in which the buffer layer includes a first buffer layer and a second buffer layer. Preferably, the first buffer layer includes a first layer of the first buffer layer comprising AlyGa1-yN on the substrate and a second layer of the first buffer layer comprising AlxGa1-xN on the first layer of the first buffer layer. The second buffer layer includes a first layer of the second buffer layer comprising AlwGa1-wN on the first buffer layer and a second layer of the second buffer layer comprising AlzGa1-zN on the first layer of the second buffer layer, in which x>z>y>w.

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

Abstract: A dynamic balancing apparatus includes a dynamic balancing assembly and a plurality of damping particles. The dynamic balancing assembly includes at least two structural members separately arranged on a rotating shaft connected to a rotor, wherein each structural member includes at least one recess portion. The plurality of damping particles are introduced into at least one recess portion of each structural member, such that a centroid of each structural member deviates from the axis. Accordingly, each structural member generates inertial force and moment of inertia as rotation of the rotor to offset another inertial force and moment of inertia generated by centroid deviation of the rotor while rotating to achieve dynamic balance. The plurality of damping particles can move in the recess portion as rotation of the rotor to induce friction and collision so as to achieve the effects of vibration reduction and noise reduction.

Abstract: Techniques and systems are provided for processing image data. A first image having a first resolution can be obtained. In some aspects, the first image is generated based on a pixel binning process. A second image can be obtained having a second resolution that is greater than the first resolution. In some aspects, the second image is generated based on a remosaicing process. One or more weight maps can be generated based on characteristics determined based on pixels of the first image, pixels of the second image, or pixels of both the first image and the second image. A fused image can be generated based on the one or more weight maps that includes a first set of pixels from the first image and a second set of pixels from the second image.

Abstract: A dynamic balancing apparatus includes a dynamic balancing assembly and a plurality of damping particles. The dynamic balancing assembly includes at least two structural members separately arranged on a rotating shaft connected to a rotor, wherein each structural member includes at least one recess portion. The plurality of damping particles are introduced into at least one recess portion of each structural member, such that a centroid of each structural member deviates from the axis. Accordingly, each structural member generates inertial force and moment of inertia as rotation of the rotor to offset another inertial force and moment of inertia generated by centroid deviation of the rotor while rotating to achieve dynamic balance. The plurality of damping particles can move in the recess portion as rotation of the rotor to induce friction and collision so as to achieve the effects of vibration reduction and noise reduction.

Abstract: A power backup circuit provides a plurality of input power sources to back up a load. The power backup circuit includes a first switch, a second switch, and a control unit. The input power sources at least includes a first input power source and a second input power source. If the input power source of the load needs to be changed from the first input power source to the second input power source, the control unit controls the first switch to be coupled to the second input power source and controls the second switch to be coupled to the second input power source after the control unit effects a supply current flowing through a first power supply path and a second power supply path both coupled to the first input power source and the load to be reduced below a current threshold.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Abstract: A desiccant wheel is provided to be rotatable. Through the body of the wheel or a surface adsorbent, water vapor in humid air flow is adsorbed. By passing a high-temperature air flow through the wheel, the body or surface coating is regenerated with moisture removed. Along a cross-section radial, the wheel is divided into different areas. The body has three-dimensionally inter-connected pores. The pores can be of different types. The wheel is a complete concentric cylinder or a concentric cylinder comprising equal or unequal sectors. The equal or unequal sectors are separated with each other. The wheel can rotate at a fixed speed for continually repeating a process of adsorbing, transiting, and regenerating. Thereby, drying can be carried out without causing physical or chemical change to heat-sensitive material, which also improves drying efficiency, reduces size, lowers power consumption, and helps in carbon reduction for industry.

Abstract: The present disclosure provides a Pennisetum extract, process for manufacturing the same, and uses thereof for inhibiting differentiation and/or activation of osteoclast, and prevention and/or treatment of osteoporosis.