Abstract: A face recognition monitoring system based on spectrum and multi-band fusion, including a spectrum camera, a first module for acquiring a face spectral image, a second module for preprocessing data of the face spectral image, a face spectral image database and a third module for recognizing the face spectral image. The spectrum camera includes an optical lens and a silicon-based detector. The silicon-based detector includes a photoelectric conversion substrate and a filter film arranged thereon. The filter film includes N units each including a visible spectrum sensing area, a near-infrared spectral image sensing area and a RGGB image acquisition area. The N units cover all pixels on the photoelectric conversion substrate. A recognition method using the above system is also provided.

Abstract: The present application discloses a method for manufacturing shallow trench isolation, comprising: step 1: performing first time etching on a semiconductor substrate by means of a dry etching process to form the shallow trench, wherein in the first time etching, metal ions are released from a dry etching process chamber and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; and step 2: performing second time etching on the semiconductor substrate exposed on the inner surface of the shallow trench by means of a wet etching process to remove the contamination layer on the inner surface of the shallow trench. In the present application, the metal ions released from the dry etching process chamber and deposited on the inner surface of the shallow trench during the dry etching of the shallow trench can be removed.

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

Abstract: A micro light-emitting device includes an epitaxial unit and a current-spreading layer. The epitaxial unit has a top portion that includes an ohmic contact region and a non-ohmic contact region. The top portion has a periphery area which forms at least a part of the non-ohmic contact region. The periphery area has a reduced conductivity compared with the remainder of the top portion. The current-spreading layer is disposed on the ohmic contact region. A method for making the micro light-emitting device, and a display screen including the same are also disclosed.

Abstract: Image processing performed on images captured with image capture devices may be used to improve upon some of the problems with images captured from devices, including images captured from devices with larger aperture lenses, and, in some particular examples, mobile devices with larger aperture lenses. Multiple images may be captured by the capture device and processing applied to generate a single image through fusing of the multiple images. One potential benefit obtained with fusion of multiple images is a single image with an effective depth of focus (DOF) larger than that available in a single image obtained from the capture device. The DOF of the fused image may be larger than a single image and/or may include multiple distinct in-focus focal distances, whereas a single image from a single capture device has only a single in-focus focal distance.

Abstract: A semiconductor structure includes a substrate including a device region, a peripheral region surrounding the device region, and a transition region disposed between the device region and the peripheral region. An epitaxial layer is disposed on the device region, the peripheral region, and the transition region. A first portion of the epitaxial layer on the peripheral region has a poly-crystal structure.

Abstract: A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InzAlX1Ga1?X1As highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlX2Ga1?X2As first composition graded layer wherein X2 is greater than 0 and less than X1, a GaYIn1?YP highly doped n-type semiconductor layer and a AlX3Ga1?X3As second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

Abstract: The present application discloses a vacuum pumping valve for semiconductor equipment and a vacuum control system, wherein the vacuum pumping valve includes a driving device, a base, a rotary disk, and a set of blades, wherein the blades are mounted between the base and the rotary disk, the rotary disk driven by the driving device drives the blades to move synchronously on the base, the moving blades together form a pumping orifice, the shape of the pumping orifice is a regular polygon coaxial with the rotary disk, and the opening of the pumping orifice is adjustable by means of synchronous movement of the blades. In the present application, the effective passage area of the gas flow and vacuum pressure of the reaction chamber can be controlled, and the problem of an asymmetric gas plasma distribution can be effectively resolved.

Abstract: A semiconductor device includes a substrate having a P-type device region and an N-type device region, wherein the P-type device region includes germanium dopants. A first gate oxide layer is formed on the P-type device region and a second gate oxide layer is formed on the N-type device region. The first gate oxide layer and the second gate oxide layer are formed through a same oxidation process. The first gate oxide layer includes nitrogen dopants and the second gate oxide layer does not include the nitrogen dopants.

Abstract: Systems with a contouring method are provided for contouring one or more targets that correspond to specific organs and/or tumors in a three-dimensional medical image of a patient using neural networks. The contouring system includes a storage unit, a processing unit, and a plurality of modules that are computer operable. The processing unit is used to obtain the image, and then to generate one or more contouring images using a contouring method. The contouring method includes enhancing image features and improving contouring accuracy using an image preprocessing module, and extracting a plurality of multi-scale image representations and expanding these representations to one or more contouring images using a neural network-based contouring module.

Abstract: The presented disclosure provides a gear processing apparatus, including a base, a driving unit, a bearing unit, a grinding assembly and a control unit. The driving unit, the bearing unit and the grinding assembly are arranged on the base. The bearing unit is used to carry the gear and can be activated by the driving unit to perform plural first corresponding axial movements relative to the bearing unit. The grinding assembly includes a grinding member. The grinding assembly can be activated by the driving unit to perform plural second corresponding axial movements relative to the bearing unit to contact the tooth surface of the gear by the grinding member. The control unit is used to control the driving module to apply additional movement to at least one of the plural first corresponding axial directions or/and at least one of the plural second corresponding axial directions during the grinding process to change the grinding directions of the tooth surface of the gear generated by the grinding member.

Abstract: The present application relates to a wafer transfer module in a semiconductor manufacturing machine, relating to semiconductor integrated circuit manufacturing machines, wherein two sets of transmitter/receivers are provide on sidewalls of the wafer transfer module to monitor the travel position of an elevator, two sets of transmitter/receivers are provide on the sidewalls of the wafer transfer module to monitor the position of a transfer arm, a signal received by the receiver is transmitted to a control system such that the control system determines, according to the travel position of the elevator and the transfer arm position, whether the transfer arm can obtain a to-be-transferred wafer, thereby preventing the problem of a wafer scratch caused by an elevator position deviation or a transfer arm position deviation.

Abstract: The presented disclosure provides a gear processing apparatus, including a base, a bearing unit, a grinding unit, and a control unit. The bearing unit and the grinding unit are arranged on the base. The bearing unit is configured to carry the gear. The grinding unit includes a driving module and a grinding member connecting to the driving module. The grinding member can perform a motion of a plurality of axial directions relative to the bearing unit to contact the tooth surface of the gear. The control unit is electrically connected to the bearing unit and the grinding unit. The control unit is configured to control the driving module to apply additional motion to at least one of the plurality of axial directions during the grinding process to drive the grinding member to grind the tooth surface of the gear.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: The disclosure provides a bolt including a main body, a head portion and a thread portion. The main body has a central axis. The head portion connects the main body. The thread portion is connected to the main body and runs around the central axis. The thread portion has a bearing surface facing toward the head portion. The bearing surface is a continuous curved surface or has an inflection point. The bearing surface includes a concave curved surface, a convex curved surface and a flank surface. The concave curved surface connects the main body. The convex curved surface is located further away from the main body than the concave curved surface. One side of the convex curved surface connects the concave curved surface, and another side of the convex curved surface connects the flank surface.

Abstract: A face recognition monitoring system based on spectrum and multi-band fusion, including a spectrum camera, a first module for acquiring a face spectral image, a second module for preprocessing data of the face spectral image, a face spectral image database and a third module for recognizing the face spectral image. The spectrum camera includes an optical lens and a silicon-based detector. The silicon-based detector includes a photoelectric conversion substrate and a filter film arranged thereon. The filter film includes N units each including a visible spectrum sensing area, a near-infrared spectral image sensing area and a RGGB image acquisition area. The N units cover all pixels on the photoelectric conversion substrate. A recognition method using the above system is also provided.

Abstract: A fingerprint identification system for a mobile phone and an identification method. The system includes a fingerprint collection module, a spectral chip, a data storage module and an identification module. The fingerprint collection module is arranged under a mobile phone screen. The mobile phone screen provides a light source to illuminate a fingerprint. The spectral chip is configured to modulate an incident spectrum, and convert an optical signal into an electrical signal to be amplified and converted into a digital signal or code for output. A finger reflection spectral data and a fingerprint image data are collected by inversion of an optical signal intensity information and a pixel location information. The data storage module is configured to store reflection spectral data and fingerprint image data of a real finger input in advance. The identification module is configured to compare the collected data with the pre-stored data.

Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

Abstract: A desiccant wheel is provided to be rotatable. Through the body of the wheel or a surface adsorbent, water vapor in humid air flow is adsorbed. By passing a high-temperature air flow through the wheel, the body or surface coating is regenerated with moisture removed. Along a cross-section radial, the wheel is divided into different areas. The body has three-dimensionally inter-connected pores. The pores can be of different types. The wheel is a complete concentric cylinder or a concentric cylinder comprising equal or unequal sectors. The equal or unequal sectors are separated with each other. The wheel can rotate at a fixed speed for continually repeating a process of adsorbing, transiting, and regenerating. Thereby, drying can be carried out without causing physical or chemical change to heat-sensitive material, which also improves drying efficiency, reduces size, lowers power consumption, and helps in carbon reduction for industry.