Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip that includes depositing a phase change material layer over a bottom electrode. The phase change material is configured to change its degree of crystallinity upon temperature changes. A top electrode layer is deposited over the phase change material layer, and a hard mask layer is deposited over the top electrode layer. The top electrode layer and the hard mask layer are patterned to remove outer portions of the top electrode layer and to expose outer portions of the phase change material layer. An isotropic etch is performed to remove portions of the phase change material layer that are uncovered by the top electrode layer and the hard mask layer. The isotropic etch removes the portions of the phase change material layer faster than portions of the top electrode layer and the hard mask layer.

Abstract: A method, includes: applying a read voltage at a first read voltage level to read a memory cell for detecting a resistance level of the memory cell; applying the read voltage at a second read voltage level, different from the first read voltage level, to read the memory cell for determining a waveform type has been utilized to program the memory cell; recognizing data bits stored in the memory cell. The data bits stored in the memory cell comprise a first data bit and at least one second data bit. The first data bit is recognized according to the waveform type and is irrelevant with the resistance level. The at least one second data bit is recognized according to the resistance level and is irrelevant with the waveform type. A device is also disclosed herein.

Abstract: A memory device that includes at least one memory cell is introduced. Each of the at least one memory cell is coupled to a bit line and a word line. Each of the at least one memory cell includes a memory element and a selector element, in which the memory element is configured to store data of the at least one memory cell. The selector element is coupled to the memory element in series and is configured to select the memory element for a read operation and amplify the data stored in the memory element in the read operation.

Abstract: A coupling mechanism for a vehicle body having mutually pivotable first and second frames comprises an axle fixed to the first frame, a rotating member fixed to the second frame and rotatably mounted around the axle, and a torsional resistance module that is actuated when the axle and the rotating member rotate relative to each other. The torsional resistance module includes two force magnifying mechanisms connected between the first frame and the rotating member. A buffering member is disposed between the force magnifying mechanisms. When the buffering member is pressed, a relative torsional resistance is provided between the first and second frames through transmission of the force magnifying mechanisms. The torsional resistance has a non-linear relationship with a relative rotational angle between the first and second frames.

Abstract: In some embodiments, the present disclosure relates to an integrated chip including a phase change material disposed over a bottom electrode and configured to change from a crystalline structure to an amorphous structure upon temperature changes. A top electrode is disposed over an upper surface of the phase change material. A via electrically contacts a top surface of the top electrode. Further, a maximum width of the upper surface of the phase change material is less than a maximum width of a bottom surface of the phase change material.

Abstract: A method is disclosed including following operations. A first signal is applied to memory cells in a memory device, to adjust resistance values of the memory cells. After the first signal is applied, a second signal is applied to the memory cells other than the first memory cell, to further adjust the resistance values of the plurality of memory cells other than the first memory cell. After the second signal is applied, data corresponding to the first predetermined resistance value and the second predetermined resistance value is stored in the first memory cell and the second memory cell, respectively. The first signal is configured for controlling a first memory cell in the memory cells to have a first predetermined resistance value. The second signal is configured for controlling a second memory cell in the memory cells to have a second predetermined resistance value.

Abstract: Various embodiments of the present disclosure are directed towards a resistive random access memory (RRAM) device including a scavenger layer. A bit line overlying a semiconductor substrate. A data storage layer around outer sidewalls and a top surface of the bit line. A word line overlying the data storage layer. A scavenger layer between the word line and the bit line such that a bottom surface of the scavenger layer is aligned with a bottom surface of the bit line. A lateral thickness of the scavenger layer is less than a vertical thickness of the scavenger layer.

Abstract: Methods for programming or reading a memory cell are disclosed. The methods include following operations. A read voltage at a first read voltage level is applied to read a memory cell for detecting a resistance level of the memory cell. The read voltage at a second read voltage level, different from the first read voltage level, is applied to read the memory cell for determining a waveform type has been utilized to program the memory cell. The resistance level and the waveform type are combined to recognize data bits stored in the memory cell.

Abstract: An electrical component includes an insulating base, an insulating layer provided outside the insulating base, a shielding member provided between the insulating base and the insulating layer, and multiple conductive bodies accommodated in the insulating base. The conductive bodies include at least one power supply body. Each of the at least one power supply body is provided with a shielding layer outside the power supply body and an insulator between the power supply body and the shielding layer. The shielding layer is accommodated in the shielding member. In the electrical component, by providing a shielding layer and an insulator provided between the power supply body and the shielding layer outside the power supply body, shielding of the shielding layer from the power supply body is implemented, so as to reduce an interference of the power supply body on a signal body, thereby improving transmission quality of high-frequency signals.

Abstract: A method of manufacturing an electrical connector is provided. A substrate is provided with multiple conductive portions and multiple through holes running through the substrate vertically. The substrate is disposed in a mold, and then a liquid plastic is injected into the mold. The liquid plastic flows into the through holes. The liquid plastic forms a connecting member located below the substrate and multiple support members integrally connected by the connecting member after cooling. The support members are correspondingly accommodated in the through holes and protrude upward out of the substrate. The substrate, the support members and the connecting member are taken out from the mold. Multiple first terminals are formed. Each first terminal has a first conducting portion and a first contact portion to be upward conductively connected to a chip module. The first conducting portions of the first terminals are downward conductively connected to the conductive portions correspondingly.

Abstract: A method for manufacturing a formed member is provided. A metal sheet is provided in a mold including a mold cavity. An upper end as well as each of left and right sides of the mold cavity are in communication with at least one first upper runner channel and at least one side runner channel. A liquid insulating material is injected into the mold and flows into the mold cavity from the first upper runner channel and the side runner channel respectively. After the liquid insulating material is solidified, a body is formed in the mold cavity, a first upper connecting portion is formed in each first upper runner channel, and a side connecting portion is formed in each side runner channel. Then the formed member is obtained by disconnecting the joints of the body and each of the first upper connecting portion as well as the side connecting portion.

Abstract: A connector assembly includes a first electronic component, an electrical connector and a shielding shell fixed to the first electronic component, a second electronic component located above the first electronic component, and a mating member fixed to the second electronic component. The electrical connector includes an insulating body, and a first terminal electrically connected to the first electronic component. The mating member includes a second terminal electrically connected to the second electronic component. The shielding shell has a first grounding portion and a second grounding portion, and covers outside the first terminal. The first grounding portion is electrically connected to the first electronic component.

Abstract: In some embodiments, the present disclosure relates to an integrated chip including a phase change material disposed over a bottom electrode and configured to change from a crystalline structure to an amorphous structure upon temperature changes. A top electrode is disposed over an upper surface of the phase change material. A via electrically contacts a top surface of the top electrode. Further, a maximum width of the upper surface of the phase change material is less than a maximum width of a bottom surface of the phase change material.

Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

Abstract: A semiconductor device includes logic circuitry including a transistor disposed over a substrate, multiple layers each including metal wiring layers and an interlayer dielectric layer, respectively, disposed over the logic circuitry, and memory arrays. The multiple layers of metal wiring include, in order closer to the substrate, first, second, third and fourth layers, and the memory arrays include lower multiple layers disposed in the third layer.

Abstract: A method is disclosed including following operations. A first signal is applied to memory cells in a memory device, to adjust resistance values of the memory cells. After the first signal is applied, a second signal is applied to the memory cells other than the first memory cell, to further adjust the resistance values of the plurality of memory cells other than the first memory cell. After the second signal is applied, data corresponding to the first predetermined resistance value and the second predetermined resistance value is stored in the first memory cell and the second memory cell, respectively. The first signal is configured for controlling a first memory cell in the memory cells to have a first predetermined resistance value. The second signal is configured for controlling a second memory cell in the memory cells to have a second predetermined resistance value.

Abstract: Methods for programming or reading a memory cell are disclosed. The methods include following operations. A read voltage at a first read voltage level is applied to read a memory cell for detecting a resistance level of the memory cell. The read voltage at a second read voltage level, different from the first read voltage level, is applied to read the memory cell for determining a waveform type has been utilized to program the memory cell. The resistance level and the waveform type are combined to recognize data bits stored in the memory cell.

Abstract: A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.

Abstract: An electrical component includes an insulating base, an insulating layer provided outside the insulating base, a shielding member provided between the insulating base and the insulating layer, and multiple conductive bodies accommodated in the insulating base. The conductive bodies include at least one power supply body. Each of the at least one power supply body is provided with a shielding layer outside the power supply body and an insulator between the power supply body and the shielding layer. The shielding layer is accommodated in the shielding member. In the electrical component, by providing a shielding layer and an insulator provided between the power supply body and the shielding layer outside the power supply body, shielding of the shielding layer from the power supply body is implemented, so as to reduce an interference of the power supply body on a signal body, thereby improving transmission quality of high-frequency signals.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.