Abstract: A method includes applying a pulse sequence to a PCM device, each pulse of the pulse sequence including a pulse number, an amplitude, a leading edge, a pulse width, and a trailing edge, the trailing edge having a duration longer than a duration of the leading edge. Applying the pulse sequence includes increasing the pulse number while increasing at least one of the amplitude, the pulse width, or the trailing edge duration. A conductance level of the PCM device is altered in response to applying the pulse sequence.

Abstract: An electrical component includes an insulating base, an insulating layer provided outside the insulating base, a shielding member provided between the insulating base and the insulating layer, and multiple conductive bodies accommodated in the insulating base. The conductive bodies include at least one power supply body. Each of the at least one power supply body is provided with a shielding layer outside the power supply body and an insulator between the power supply body and the shielding layer. The shielding layer is accommodated in the shielding member. In the electrical component, by providing a shielding layer and an insulator provided between the power supply body and the shielding layer outside the power supply body, shielding of the shielding layer from the power supply body is implemented, so as to reduce an interference of the power supply body on a signal body, thereby improving transmission quality of high-frequency signals.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A spin-orbit torque MRAM is provided. The spin-orbit torque MRAM includes a spin Hall metal layer, a free magnetic layer disposed on the spin Hall metal layer, a barrier layer, and a pinned layer. The free magnetic layer includes a first area and a second area located on both sides thereof. The barrier layer includes a first area and a second area located on both sides thereof. The first area of the barrier layer is disposed on that of the free magnetic layer, and the second area of the barrier layer is disposed on that of the free magnetic layer. The pinned layer is disposed on the first area of the barrier layer.

Abstract: The current disclosure describes techniques for patterning a phase-change memory layer. A SiON layer is used as a first hard mask and an electrical conductive protective layer is used as a second hard mask to pattern the phase-change memory layer. An organic BARC layer is sued to improve the photolithography accuracy. The thickness ratio between the organic BARC layer and the hard mask SiON layer and the etching conditions of the hard mask SiON layer are controlled such that the patterned organic BARC layer is completely or near completely resolved simultaneously with the patterning of the hard mask SiON layer.

Abstract: A display device is provided. The display device includes a first substrate, a second substrate, a base layer, a first shielding layer, and a first optical adjustment layer. The second substrate has a third surface and a fourth surface. The base layer is disposed between the first substrate and the second substrate. The first shielding layer is disposed between the first substrate and the base layer and defines a first shielding region and a first non-shielding region. The first optical adjustment layer is disposed between the first shielding layer and the second substrate. The thickness of the first optical adjustment layer is in a range from 1 ?m to 3 ?m. The reflectance of the first optical adjustment layer is in a range from 0.05% to 1.2%.

Abstract: A spin-orbit torque MRAM is provided. The spin-orbit torque MRAM includes a spin Hall metal layer, a free magnetic layer disposed on the spin Hall metal layer, a barrier layer, and a pinned layer. The free magnetic layer includes a first area and a second area located on both sides thereof. The barrier layer includes a first area and a second area located on both sides thereof. The first area of the barrier layer is disposed on that of the free magnetic layer, and the second area of the barrier layer is disposed on that of the free magnetic layer. The pinned layer is disposed on the first area of the barrier layer.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A perpendicularly magnetized spin-orbit magnetic device including a heavy metal layer, a magnetic tunnel junction, a first antiferromagnetic layer, a first block layer and a first stray field applying layer is provided. The magnetic tunnel junction is disposed on the heavy metal layer. The first block layer is disposed between the magnetic tunnel junction and the first antiferromagnetic layer. The first stray field applying layer is disposed between the first antiferromagnetic layer and the first block layer. The first stray field applying layer provides a stray magnetic field parallel to a film plane. The first antiferromagnetic layer contacts the first stray field applying layer to define the direction of the magnetic moment in the first stray field applying layer.

Abstract: A method for manufacturing an electrical connector, including: S1: providing a bearing tray, where the bearing tray is concavely provided with multiple holding slots at intervals; S2: providing multiple solders correspondingly placed in the multiple holding slots; S3: heating the bearing tray, so as to soften the solders; S4: providing an insulating body and multiple terminals disposed at the insulating body, where each of the terminals has a soldering portion exposed from the insulating body, and moving the insulating body and the terminals entirely to the bearing tray, so that the soldering portion of each of the terminals is correspondingly inserted into a corresponding one of the softened solders; and S5: sticking the solder to the soldering portion, moving the insulating body away from above the bearing tray, and separating the solders from the bearing tray. The electrical connector has good electrical connection performance.

Abstract: A touch display device includes a first substrate, a first touch pattern and an insulation layer. The first touch pattern is disposed on the first substrate, and the insulation layer is disposed on the first substrate. The insulation layer and the first touch pattern are overlapped. The insulation layer includes a protection layer and a dielectric layer, and the dielectric layer is disposed between the protection layer and the first substrate. A material of the protection layer includes an oxide, and a material of the dielectric layer comprises silicon nitride or silicon oxynitride.

Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.

Abstract: Techniques and implementations related to automatic image capture during preview, as well as recommendation of images, are described. A method for operating an electronic apparatus may involve receiving a stream of one or more preview images in a preview mode of the electronic apparatus. The method may also involve determining whether any preview image of the stream of preview images is valuable. The method may further involve controlling an operation of the electronic apparatus in response to the determining.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a silicon substrate having a groove, an epitaxial layer disposed on the sidewalls of the groove, and a gate disposed above the epitaxial layer and electrically connected to the epitaxial layer. The sidewalls of the groove have a lattice direction of (111). The groove extends in a first direction. The semiconductor structure and its fabrication method make a complementary metal oxide semiconductor (CMOS) circuit and a high electron mobility transistor (HEMT) with high electron mobility, high breakdown voltage and heat resistance properties being capable of being integrated on the same silicon (100) substrate at the same time to enhance the ability of the system on chip to handle power and RF power signals.

Abstract: A mirror display device, which includes: a display panel; a first polarizer disposed on the display panel; and an optical structure disposed on the first polarizer. The optical structure includes: a first polarization conversion layer; and a second polarization conversion layer or a reflection layer, wherein the first polarization conversion layer is disposed between the first polarizer and the second polarization conversion layer or the reflection layer; wherein a sum of a first reflectance and a first transmittance of the optical structure is greater than 100% and less than 150%, in which the first reflectance is referred to a percentage of external light irradiating into the mirror display device and reflected by the optical structure, and the first transmittance is referred to a percentage of light passing through a first polarizer and then irradiating into and passing through the optical structure.

Abstract: A posture sensing apparatus and posture sensing method are provided. The posture sensing apparatus includes a magnetic object and a first magnetic sensor. The magnetic object and the first magnetic sensor are disposed respectively at two different positions of a user or a wearing object that the user is wearing. The magnetic object emits a magnetic field. The first magnetic sensor senses the magnetic field emitted by the magnetic object to generate a first angle, so as to obtain a posture of the user based on the first angle.

Abstract: A touch display panel includes a display structure and a touch structure. The display structure includes pixels having a first pitch P1. The touch structure includes a touch layer having slits and dummy clefts. The slits and the dummy clefts have a second pitch P2 and a third pitch P3, respectively. Two adjacent vertices of each slit define a line segment having a length Ly. A first moire ratio (MR1) defined as P ? ? 2 P ? ? 1 satisfies: 20.7%×A1+8.5%×B1?3%?MR1?12.7%×A1+16.5%×B1+3%, wherein A1 is an integer from 0 to 3, B1 is an integer from 1 to 3, and 0?B1?A1?1. A second moire ratio (MR2) defined as P ? ? 3 P ? ? 1 satisfies: 20.7%×A2+8.5%×B2?3%?MR2?12.7%×A2+16.5%×B2+3%, wherein A2 is an integer from 0 to 3, B2 is an integer from 1 to 3, and 0?B2?A2?1. An arrangement ratio (LR) defined as Ly P ? ? 1 satisfies: (2C+1)×25%?20%?LR?(2C+1)×25%+20%, wherein C is an integer from 0 to 11.

Abstract: A touch display device includes a substrate. The substrate includes a display area, a non-display area, a first touch area, and a non-touch area. A first touch grid is disposed within the first touch area. A second touch grid is electrically isolated from the first touch grid and disposed within the first touch area. A first wire is disposed within the non-touch area and electrically connected to the first touch grid. A second wire is disposed within the non-touch area and electrically connected to the second touch grid. The first wire and the second wire are staggered and are electrically isolated from each other. The second wire includes at least two separate conductive units and at least one bridge wire connected to the at least two separate conductive units. An insulating layer is disposed between the first wire and the second wire.

Abstract: A display device is provided. The display device includes a first substrate, a second substrate, a base layer, a first shielding layer, and a first optical adjustment layer. The second substrate has a third surface and a fourth surface. The base layer is disposed between the first substrate and the second substrate. The first shielding layer is disposed between the first substrate and the base layer and defines a first shielding region and a first non-shielding region. The first optical adjustment layer is disposed between the first shielding layer and the second substrate. The thickness of the first optical adjustment layer is in a range from 1 ?m to 3 ?m. The reflectance of the first optical adjustment layer is in a range from 0.05% to 1.2%.

Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.