Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A semiconductor device includes a plurality of fin structures disposed over a substrate and a work function alloy layer disposed over each fin structure of the plurality of fin structures. The plurality of fin structures includes a first fin structure and a second fin structure. A content of a first element in a first portion of the work function alloy layer, which portion is disposed over the first fin structure, is different from a content of the first element in a second portion of the work function alloy layer, which portion is disposed over the second fin structure.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: A method for processing a substrate is provided. The method includes the following operations: placing a substrate over a first injector in a substrate processing apparatus, the substrate having a front surface and a back surface opposite to the front surface, and the front surface having a plurality of concentric regions; adjusting a temperature of each of the plurality of concentric regions by controlling at least one of a flow rate and a temperature associated with a fluid dispensing from the first injector; and rotating the substrate by a spin base disposed below the substrate, the substrate is rotated with respect to a center axis perpendicular to the front surface thereof when adjusting the temperature. The spin base includes a ring opening for rotating relative to the first injector, and the first injector is displaced from a projection of a center of the substrate from a top view perspective.

Abstract: An electrical connector including an insulating body, a metal shielding member disposed in the insulating body, a plurality of terminals disposed in the insulating body, and an outer shell sheathed on the insulating body is provided. The metal shielding member has a leading edge, a pair of side edges bordered at two opposite sides of the leading edge, a protrusion located at the leading edge, and a plurality of openings. The leading and the side edges are protruded out of the insulating body. The openings are located between the leading and the side edges, and are concentrated at positions near the leading edge. Portions of the insulating body penetrate the openings.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.

Abstract: A portable electronic device including a main display having a locking recess at a side edge and at least one external display detachable relative to the side edge of the main display is provided. The external display includes a body, and at least one latch pivoted to the body. The latch is pivoted to the body to be swiveled out of or into the body. An opening of the locking recess faces obliquely upward and faces away from a direction of gravity when the main display is standing, the at least one latch swiveled out of the body faces obliquely downward and faces forward the direction of gravity to be inserted into the locking recess, and the at least one external display is hung on at the side edge of the main display by a weight of the at least one external display.

Abstract: A thermoelectric cooling module including multiple P-type thermoelectric units, multiple N-type thermoelectric units, multiple electrical connecting members, and a filler is provided. Each of the electrical connecting members is electrically connected between the P-type thermoelectric unit and the N-type thermoelectric unit that are adjacent. The filler is disposed between the P-type thermoelectric unit and the N-type thermoelectric unit that are adjacent, and is also disposed at a surrounding of the P-type thermoelectric units and the N-type thermoelectric units.

Abstract: A portable electronic device including a first body, a second body, and a hinge mechanism is provided. The second body is connected to the first body through the hinge mechanism, and the hinge mechanism has a rotating shaft fixed to the second body. When the second body rotates relative to the first body, the rotating shaft slides along an arc-shaped path to increase or decrease a distance between a lower edge of the second body and a back side of the first body.

Abstract: A portable electronic device including a main display and at least one external display detachable relative to one side of the main display is provided. The external display includes a body, a slider slidably disposed in the body, at least one latch pivoted to the body, and at least one elastic member connected between the slider and the body. The latch has a driving column and a tenon portion opposite to each other, and the driving column is movably connected to the slider, such that when the slider slides relative to the body, the latch is driven to pivot relative to the body, and the tenon portion is rotated out of the body or hidden in body. The tenon portion that is rotated out of the body is inserted into the main display, so that the external display is combined to the main display.

Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature, and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.

Abstract: An electronic device assembly is provided, including an electronic device body and a detachable lens module. The electronic device body has a housing and a first joining unit, wherein the first joining unit is disposed on the housing. The detachable lens module is detachably assembled onto the housing and has a second joining unit, wherein the first joining unit is joined to the second joining unit to electrically connect the detachable lens module to the electronic device body.