Abstract: An electronic device includes a casing, a stylus, a first magnet, a magnetic ring, and a pair of second magnets. The casing has a surface and an accommodation groove recessed from the surface. The stylus has a front end and a rear end. The first magnet is disposed at one of the front end and the rear end of the stylus, and the magnetic ring is disposed at the other of the front end and the rear end of the stylus. The second magnets are disposed in the casing and located below the accommodation groove, where locations of the first magnet and the magnetic ring correspond to locations of the second magnets.

Abstract: In an embodiment, a device includes: a semiconductor substrate; a first inter-layer dielectric (ILD) over the semiconductor substrate; a first conductive feature extending through the first ILD; a first etch stop layer over the first conductive feature and the first ILD, the first etch stop layer being a first dielectric material; a second ILD over the first etch stop layer; a contact having a first portion extending through the second ILD and a second portion extending through the first etch stop layer, the contact being physically and electrically coupled to the first conductive feature; and a first protective layer surrounding the second portion of the contact, the first portion of the contact being free from the first protective layer, the first protective layer being a second dielectric material, the second dielectric material being different from the first dielectric material.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: A touch pad structure includes a first casing, a second casing, a touch pad, an elastic element, a button, and an adjusting element. The first casing has an opening and is disposed on the second casing. The touch pad is disposed in the opening. The touch pad has a pivot portion and a movable portion. The pivot portion is pivoted to the first casing. A side of the movable portion facing the second casing is provided with a trigger. The elastic element is located between the first casing and the second casing. The elastic element has a first end and a second end. The button is aligned to the trigger and abuts against the first end of the elastic element. The adjusting element rotatably and movably penetrates through the second casing and is aligned to the button. The adjusting element abuts against the second end of the elastic element.

Abstract: In one exemplary aspect, a method comprises providing a semiconductor structure having a substrate, one or more first dielectric layers over the substrate, a first metal plug in the one or more first dielectric layers, and one or more second dielectric layers over the one or more first dielectric layers and the first metal plug. The method further comprises etching a via hole into the one or more second dielectric layers to expose the first metal plug, etching a top surface of the first metal plug to create a recess thereon, and applying a metal corrosion protectant comprising a metal corrosion inhibitor to the top surface of the first metal plug.

Abstract: Semiconductor devices and methods of manufacture are described herein. A method includes forming an opening through an interlayer dielectric (ILD) layer to expose a contact etch stop layer (CESL) disposed over a conductive feature in a metallization layer. The opening is formed using photo sensitive materials, lithographic techniques, and a dry etch process that stops on the CESL. Once the CESL is exposed, a CESL breakthrough process is performed to extend the opening through the CESL and expose the conductive feature. The CESL breakthrough process is a flexible process with a high selectivity of the CESL to ILD layer. Once the CESL breakthrough process has been performed, a conductive fill material may be deposited to fill or overfill the opening and is then planarized with the ILD layer to form a contact plug over the conductive feature in an intermediate step of forming a semiconductor device.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.

Abstract: An electronic device is provided, including a main body, a cover movably connected to the main body, a biasing element connected to the cover and the main body, a movable member movably disposed on the main body, and a magnetic element disposed on the movable member. When the cover is located in a closed position relative to the main body, the cover is attracted by the magnetic element and restricted in the closed position. When the movable member is pushed by an external force to move from its initial position to a first position, the movable member and the magnetic element separate from the cover, and the biasing element drives the cover to move from the closed position to an open position.

Abstract: A touch pad structure includes a first casing, a second casing, a touch pad, an elastic element, a button, and an adjusting element. The first casing has an opening and is disposed on the second casing. The touch pad is disposed in the opening. The touch pad has a pivot portion and a movable portion. The pivot portion is pivoted to the first casing. A side of the movable portion facing the second casing is provided with a trigger. The elastic element is located between the first casing and the second casing. The elastic element has a first end and a second end. The button is aligned to the trigger and abuts against the first end of the elastic element. The adjusting element rotatably and movably penetrates through the second casing and is aligned to the button. The adjusting element abuts against the second end of the elastic element.

Abstract: A plug connector includes a conductive body, an insulative body, and a ring shape conductive terminal. The conductive body has an assembling hole. The insulative body is sleeved on the conductive body, wherein the insulative body has an opening hole and the assembling hole is aligned with the opening hole. The ring shape conductive terminal is assembled in the assembling hole, wherein the ring shape conductive terminal includes a conductive inner ring and the conductive inner ring includes a plurality of conductive portions. The conductive portions are arranged circularly and each conductive portion has at least two conductive contacts.

Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.

Abstract: In one exemplary aspect, a method comprises providing a semiconductor structure having a substrate, one or more first dielectric layers over the substrate, a first metal plug in the one or more first dielectric layers, and one or more second dielectric layers over the one or more first dielectric layers and the first metal plug. The method further comprises etching a via hole into the one or more second dielectric layers to expose the first metal plug, etching a top surface of the first metal plug to create a recess thereon, and applying a metal corrosion protectant comprising a metal corrosion inhibitor to the top surface of the first metal plug.

Abstract: An expansion device includes a supporting base and a hub. The supporting base includes a bottom portion, a supporting portion, and an electrical connection port. The supporting portion is connected to the bottom portion and has an insert slot. The electrical connection port is disposed at the bottom portion. The hub is slidably disposed within the supporting portion and is located between the bottom portion and the insert slot. The hub includes a first electrical connection element and a second electrical connection element facing away from the first electrical connection element. The first electrical connection element is electrically connected to the electrical connection port, and the second electrical connection element extends into the insert slot. Another expansion device is also provided.

Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.

Abstract: A plug connector includes a conductive body, an insulative body, and a ring shape conductive terminal. The conductive body has an assembling hole. The insulative body is sleeved on the conductive body, wherein the insulative body has an opening hole and the assembling hole is aligned with the opening hole. The ring shape conductive terminal is assembled in the assembling hole, wherein the ring shape conductive terminal includes a conductive inner ring and the conductive inner ring includes a plurality of conductive portions. The conductive portions are arranged circularly and each conductive portion has at least two conductive contacts.

Abstract: A heat dissipation fan suited for being assembled in an electronic device is provided. The heat dissipation fan includes a hub and a plurality of fan blades disposed at and surrounding the hub. The fan blade has ductility and flexibility, and any two fan blades next to each other are in different thickness.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: In one exemplary aspect, a method comprises providing a semiconductor structure having a substrate, one or more first dielectric layers over the substrate, a first metal plug in the one or more first dielectric layers, and one or more second dielectric layers over the one or more first dielectric layers and the first metal plug. The method further comprises etching a via hole into the one or more second dielectric layers to expose the first metal plug, etching a top surface of the first metal plug to create a recess thereon, and applying a metal corrosion protectant comprising a metal corrosion inhibitor to the top surface of the first metal plug.