Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.

Abstract: A method of manufacturing a semiconductor structure includes: forming a first oxide layer over a landing pad layer; forming a middle patterned dielectric layer over the first oxide layer; sequentially forming a second oxide layer and a top dielectric layer over the middle patterned dielectric layer; forming a trench through the top dielectric layer, the second oxide layer and the first oxide layer; conformally forming a bottom conductive layer in the trench; removing a portion of the top dielectric layer adjacent to the trench to expose a portion of the second oxide layer beneath the portion of the top dielectric layer; and performing an etching process to remove the second oxide layer and the first oxide layer. A semiconductor structure is also provided.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A system includes one or more data processors and a non-transitory computer-readable storage medium containing instructions which, when executed on the one or more data processors, cause the one or more data processors to perform operations. The operations include receiving a modified basic input-output system (BIOS) setting using an application programming interface (API). The modified BIOS setting includes an attribute describing at least one extensible firmware interface (EFI) variable. The operations further include storing the modified BIOS setting in a future setting data structure in a baseboard management controller (BMC). The operations further include providing a current setting data structure stored in the BMC. The operations further include replacing at least a portion of the current setting data structure with the modified BIOS setting to provide a modified current setting data structure. The modified current setting data structure is then applied to the system.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments isolation regions are formed by modifying a dielectric material of a dielectric layer such that a first portion of the dielectric layer is more readily removed by an etching process than a second portion of the dielectric layer. The modifying of the dielectric material facilitates subsequent processing steps that allow for the tuning of a profile of the isolation regions to a desired geometry based on the different material properties of the modified dielectric material.

Abstract: An intelligent exercise intensity assessing system includes an exercise testing machine, a physiological information sensor, a signal transmitter connected with the physiological information sensor, a central control host connected with the signal transmitter, and a cloud database connected with the central control host. The physiological information sensor senses physiological information of an exerciser before and after the exerciser operates the exercise testing machine. The physiological information is transmitted by the signal transmitter to the central control host, and transmitted by the central control host to the cloud database. The cloud database analyzes the physiological information to obtain a corresponding forecasted watt value, and obtains a resistance level of different fitness apparatuses according to the forecasted watt value.

Abstract: An exercise intensity assessing system includes a physiological information sensor, a signal transmitter connected with the physiological information sensor, a central control host connected with the signal transmitter, and a cloud database connected with the central control host. The physiological information sensor senses physiological information of an exerciser before and after the exerciser exercises. The physiological information is transmitted by the signal transmitter to the central control host, and transmitted by the central control host to the cloud database for being diagnosed and analyzed by a fitness instructor. The cloud database obtains a forecasted watt value corresponding to the physiological information, and obtains a resistance level of different fitness apparatuses according to the forecasted watt value.

Abstract: Disclosed herein are humanized antibodies, antigen-binding fragments thereof, and antibody conjugates, that are capable of specifically binding to certain biantennary Lewis antigens, which antigens are expressed in a variety of cancers. The presently disclosed antibodies are useful to target antigen-expressing cells for treatment or detection of disease, including various cancers. Also provided are polynucleotides, vectors, and host cells for producing the disclosed antibodies and antigen-binding fragments thereof. Pharmaceutical compositions, methods of treatment and detection, and uses of the antibodies, antigen-binding fragments, antibody conjugates, and compositions are also provided.

Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.

Abstract: An electronic device includes a host, a display, a sliding plate, and a keyboard. The host has an operating surface. The display is pivoted to the host. The sliding plate is slidably disposed in the host, where the display is mechanically coupled to the sliding plate, and the sliding plate includes a plat portion and a recess portion that are arranged side by side. The keyboard is integrated to the host. The keyboard includes a key structure, where the key structure includes a key cap and a reciprocating element, and the key cap is exposed from the operating surface of the host. The reciprocating element is disposed between the key cap and the sliding plate and has a first end connected to the key cap and a second end contacting the sliding plate. The second end is located on a sliding path of the plat portion and the recess portion.

Abstract: A dynamic random access memory includes an array region, a bottom capacitor array located in the array region, and a top capacitor array located in the array region and located on the bottom capacitor array. The bottom capacitor array is single-sided capacitor array. The top capacitor is a double-sided capacitor array.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a substrate including a plurality of active areas separated from each other. In some embodiments, the method also includes forming first mask structures on the substrate. In some embodiments, the method further includes forming a first protective layer covering the first mask structures and the substrate. In some embodiments, the first protective layer defines an area exposing a portion of the first mask structures and the substrate, and the area defined by the first protective layer has a zigzag edge in a top view. In addition, the method includes performing a first etching process to remove a portion of the substrate exposed from the first mask structures and the first protective layer to form trenches.

Abstract: The present invention relates to a biosensor device for sensing an analyte over a period of time using particle motion, the biosensor device having a surface and a particle, wherein the particle and/or the surface are functionalized, and wherein the biosensor device has a first state in which the particle is associated with the surface and a second state in which the particle is not associated with the surface, and wherein switching between the first and second states depends on the presence, absence and/or concentration of the analyte, whereby motion characteristics of the particle change depending on the presence, absence and/or concentration of the analyte, thereby allowing sensing of the analyte by measuring changes in a spatial coordinate parameter of the particle relative to the surface, and wherein the properties of the particle and surface are selected such that in the second state the particle is within the vicinity of the surface such that the biosensor is able to measure changes in a spatial coordi

Abstract: A method of manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a sacrificial structure disposed on a substrate; arranging a photomask to cover the sacrificial structure, wherein the photomask includes a plurality of transparent portions, a plurality of central opaque portions, at least one first edge opaque portion and at least one second edge opaque portion between the first edge opaque portion and the central opaque portions; removing portions of the sacrificial structure to form a plurality of central openings, at least one first edge opening and at least one second edge opening through the central opaque portions, the first edge opaque portion, the second edge opaque portion and the transparent portions; and forming at least one edge word line on the substrate through the second edge opening and forming a plurality of central word lines on the substrate through the central openings.

Abstract: A method of manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a sacrificial structure disposed on a substrate; arranging a photomask to cover the sacrificial structure, wherein the photomask includes a plurality of transparent portions, a plurality of central opaque portions, at least one first edge opaque portion and at least one second edge opaque portion between the first edge opaque portion and the central opaque portions; removing portions of the sacrificial structure to form a plurality of central openings, at least one first edge opening and at least one second edge opening through the central opaque portions, the first edge opaque portion, the second edge opaque portion and the transparent portions; and forming at least one edge word line on the substrate through the second edge opening and forming a plurality of central word lines on the substrate through the central openings.

Abstract: An integrated circuit (IC) chip assembly includes an integrated circuit (IC) die that includes a first substrate in which plurality of transistors is formed, a first structure that contains a plurality of first metallization components, and a second structure that contains a plurality of second metallization components. The first structure is disposed over a first side of the first substrate. The second structure is disposed over a second side of the first substrate opposite the first side. The chip assembly includes a second substrate bonded to the IC die through the second side. The chip assembly includes a trench that extends through the second substrate and through the second structure of the IC die. Sidewalls of the trench are defined at least in part by one or more protective layers.

Abstract: A socket of a testing tool is configured to provide testing signals. A device-under-test (DUT) board is configured to provide electrical routing. An integrated circuit (IC) die is disposed between the socket and the DUT board. The testing signals are electrically routed to the IC die through the DUT board. The IC die includes a substrate in which plurality of transistors is formed. A first structure contains a plurality of first metallization components. A second structure contains a plurality of second metallization components. The first structure is disposed over a first side of the substrate. The second structure is disposed over a second side of the substrate opposite the first side. A trench extends through the DUT board and extends partially into the IC die from the second side. A signal detection tool is configured to detect electrical or optical signals generated by the IC die.