Abstract: An apparatus includes a clock skew calibration circuit configured to be coupled to a multi-phase clock generator through a plurality of delay lines, wherein a first clock skew calibration unit of the clock skew calibration circuit comprises a frequency doubler configured to receive a plurality of multi-phase clock signals and generate a clock signal, a frequency divider configured to receive the clock signal and generate a reduced frequency signal indicative of a skew of a first multi-phase clock signal, and a delay line control circuit configured to adjust the skew of the first multi-phase clock signal by comparing the reduced frequency signal with a predetermined duty cycle, and generating a control signal to modify a delay applied to the first multi-phase clock signal.

Abstract: The present disclosure provides a semiconductor device and an electrostatic discharge (ESD) clamp circuit. The semiconductor device includes a voltage divider, a cascoded inverter, and a discharge circuit. The voltage divider is electrically coupled between a power supply voltage and an output voltage of the semiconductor device. The cascoded inverter is electrically coupled to the voltage divider. The discharge circuit is electrically coupled to the cascoded inverter. The cascoded inverter is configured to turn on the discharge circuit o discharge an electrostatic discharge (ESD) current in response to an ESD event occurring on the power supply voltage or the output voltage when the semiconductor device is in an ESD mode.

Abstract: A package structure is provided. The package structure comprises a package substrate, an electronic device, a thermal interface material (TIM), a lid and an insulating encapsulant. The electronic device is disposed on and electrically connected to the package substrate. The TIM is disposed on the electronic device. The lid is disposed on the TIM. The insulating encapsulant is disposed on the package substrate and laterally encapsulates the electronic device and the TIM. A lateral dimension of the TIM is greater than a lateral dimension of the electronic device.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: The present invention provides for a genetically modified host cell comprising a first polypeptide capable of active transport of urea into the host cell and/or a second polypeptide capable of degrading urea into ammonia and carbon dioxide, wherein the genetically modified host cell is capable of degrading urea into ammonia and carbon dioxide. The genetically modified host cell in a medium comprising urea, a calcium salt or calcium ion, and a phosphate is capable of producing calcium phosphate.

Abstract: Methods and systems for performing data correction and phase optimization are disclosed herein. In some implementations, a system for performing data correction comprises: an analog to digital converter (ADC) configured to receive differential data from a continuous time linear equalizer (CTLE) and generate a bitstream comprising a plurality of data bits and a corresponding plurality of data sign bits; a decision feedback equalization (DFE) block configured to receive the bitstream from the ADC and provide data to a clock and data recovery (CDR) block; and data correction circuitry. In some implementations, the data correction circuitry is configured to: receive the bitstream from the ADC; determine whether to correct a data sign bit; responsive to determining the data sign bit is to be corrected, flip the data sign bit; and provide the plurality of data sign bits, including the flipped data sign bits, to the DFE.

Abstract: A semiconductor device includes a first switch, a second switch, a third switch, and a fourth switch formed on a first side of a substrate, wherein the first switch and the second switch are connected in series between a first reference voltage and an output voltage, and wherein the third switch and the fourth switch are connected in series between the first reference voltage and a second reference voltage. The semiconductor device includes a capacitor formed on a second side of the substrate opposite to the first side, and having a first terminal and a second terminal. The first terminal is coupled to a first node between the first and second switches, and the second terminal is coupled to a second node between the third and fourth switches.

Abstract: An apparatus includes a clock skew calibration circuit configured to be coupled to a multi-phase clock generator through a plurality of delay lines, wherein a first clock skew calibration unit comprises a frequency doubler configured to receive a plurality of multi-phase clock signals and generate a clock signal based on the plurality of multi-phase clock signals, a frequency divider configured to receive the clock signal and generate a reduced frequency signal based on the clock signal, and a delay line control circuit configured to compare the duty cycle of the reduced frequency signal with a predetermined duty cycle, and generate a first control signal to adjust the skew of the first multi-phase clock signal through adjusting a first delay applied to the first multi-phase clock signal until a calibrated signal of the first multi-phase clock signal is achieved.

Abstract: A package structure includes a circuit substrate, a package unit, a thermal interface material and a cover. The package unit is disposed on and electrically connected with the circuit substrate. The package unit includes a first surface facing the circuit substrate and a second surface opposite to the first surface. A underfill is disposed between the package unit and the circuit substrate, surrounding the package unit and partially covering sidewalls of the package unit. The cover is disposed over the package unit and over the circuit substrate. An adhesive is disposed on the circuit substrate and between the cover and the circuit substrate. The thermal interface material includes a metal-type thermal interface material and is disposed between the cover and the package unit. The thermal interface material physically contacts the second surface and the sidewalls of the package unit and physically contacts the underfill.

Abstract: An integrated circuit includes a first set of memory cells configured to store a first set of data, a second set of memory cells configured to store a second set of data, a first set of input output (IO) circuits coupled to the first set of memory cells, a second set of IO circuits coupled to the second set of memory cells, a first error correction code (ECC) circuit configured to store a first number of ECC bits, a second ECC circuit configured to store a second number of ECC bits; and a first ECC encoder/decoder circuit configured to correct at least a first number of errors in the first set of data and the second set of data based on the first number of ECC bits and the second number of ECC bits.

Abstract: A memory device includes a plurality of one-time-programming (OTP) memory cells grouped at least into a first portion and a second portion, wherein the first and second portions are disposed next to each other along a first lateral direction; a first driver circuit disposed next to the first portion along a first lateral direction, wherein the first portion is interposed between the second portion and the first driver circuit along the first lateral direction; and a second driver circuit disposed next to both of the first and second portions along a second lateral direction perpendicular to the first lateral direction. The OTP memory cells of the first portion are associated with a first electrical/physical characteristic and the OTP memory cells of the second portion are associated with a second electrical/physical characteristic, in which the first electrical/physical characteristic is different from the second electrical/physical characteristic.

Abstract: The present invention discloses a vessel power safety control system and operating method thereof. The vessel power safety control system includes a load power management module, a real-time monitoring module, an integration module and a power module. The present invention can assist the autonomous ship as any occurrence of fault during navigation. Once the accident occurs, the load power management module will give an instruction to control the DC bus to switch from closed circuit to open circuit to protect other equipment. After determining whether the errors of the equipment on board is eliminated, the load power management system performs automatic system reset procedure. As such, the DC bus can be converted from an open circuit to a closed circuit to restart the power supply for the facility.

Abstract: An apparatus includes a clock skew calibration circuit configured to be coupled to a multi-phase clock generator through a plurality of delay lines, wherein a first clock skew calibration unit comprises a frequency doubler configured to receive a plurality of multi-phase clock signals and generate a clock signal based on the plurality of multi-phase clock signals, a frequency divider configured to receive the clock signal and generate a reduced frequency signal based on the clock signal, and a delay line control circuit configured to compare the duty cycle of the reduced frequency signal with a predetermined duty cycle, and generate a first control signal to adjust the skew of the first multi-phase clock signal through adjusting a first delay applied to the first multi-phase clock signal until a calibrated signal of the first multi-phase clock signal is achieved.

Abstract: A hand tool rack includes a first housing having a first pivoting portion, a first connecting portion, a first accommodating portion, and a first hanging hole, and a second housing having a second pivoting portion pivotally connected with the first pivoting portion, a second connecting portion, a second accommodating portion, and a second hanging hole. When the second housing is in the closed position, the first accommodating portion is in communication with the second accommodating portion, and the first hanging hole is not aligned with the second hanging hole. When the second housing is in the open position, the first accommodating portion and the second accommodating portion are open toward the same direction, and the first hanging hole is aligned with the second hanging hole.

Abstract: Methods and systems for performing data correction and phase optimization are disclosed herein. In some implementations, a system for performing data correction comprises: an analog to digital converter (ADC) configured to receive differential data from a continuous time linear equalizer (CTLE) and generate a bitstream comprising a plurality of data bits and a corresponding plurality of data sign bits; a decision feedback equalization (DFE) block configured to receive the bitstream from the ADC and provide data to a clock and data recovery (CDR) block; and data correction circuitry. In some implementations, the data correction circuitry is configured to: receive the bitstream from the ADC; determine whether to correct a data sign bit; responsive to determining the data sign bit is to be corrected, flip the data sign bit; and provide the plurality of data sign bits, including the flipped data sign bits, to the DFE.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a package frame. The semiconductor package is disposed on the circuit substrate. The package frame is disposed over the circuit substrate. The package frame encircles the semiconductor package. The semiconductor package has a first surface facing the circuit substrate and a second surface opposite to the first surface. The package frame leaves exposed at least a portion of the second surface of the semiconductor package. The package frame forms a cavity, which cavity encircles the semiconductor package.

Abstract: A package structure includes a package substrate, a package module on the package substrate, a thermal interface material (TIM) layer on the package module, and a package lid on the TIM layer. The package lid includes a package lid foot portion attached to the package substrate, and a package lid plate portion on the package lid foot portion and including a patterned bottom surface having a plurality of recessed portions, wherein at least a portion of the TIM layer is located in the plurality of recessed portions.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The package includes a substrate, and first, second and third semiconductor elements disposed on and electrically connected to the substrate. A heat transfer enhancing layer, a thermal conductive material layer and an adhesive material layer are respectively disposed on and joined to the first, second and third semiconductor elements. A lid is disposed over the first, second and third semiconductor elements, and joined to the heat transfer enhancing layer, the thermal conductive material layer and the adhesive material layer. The thermal conductive material layer has a thermal conductivity lower than that of the heat transfer enhancing layer and higher than that of the adhesive material layer, and the thermal conductive material layer has a bonding strength larger than that of the heat transfer enhancing layer and smaller than that of the adhesive material layer.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.