Abstract: An embodiment apparatus includes a dielectric layer in a die, a conductive trace in the dielectric layer, and a protrusion bump pad on the conductive trace. The protrusion bump pad at least partially extends over the dielectric layer, and the protrusion bump pad includes a lengthwise axis and a widthwise axis. A ratio of a first dimension of the lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.

Abstract: A method that comprises converting a first electrical signal to a second electrical signal using a converter coupled between a micro-mechanical structure and an analog-to-digital converter (ADC). The method also comprises actuating a switch to selectively interpolate at least one datum between two neighboring converted second electrical signals based on a selected clock signal, wherein the selected clock signal is one of a plurality of clock signals, each clock signals of the plurality of clock signals has a corresponding frequency, and the selected clock signal corresponds to an operating mode of the micro-mechanical structure.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.

Abstract: An anti-cancer active substance from Antrodia Cinnamomea, produced from mycelium of Antrodia Cinnamomea by following steps: (1) culturing mycelium of Antrodia Cinnamomea by liquid fermentation; (2) extracting the thus-obtained mycelium with ethanol and concentrating the extracted solution to obtain an ethanol extract; (3) dissolving the ethanol extract in water, and extracting with equal volume of ethyl acetate to obtain ethyl acetate extract; (4) purifying the ethyl acetate extract by silica gel column chromatography using hexane/ethyl acetate gradient as the mobile phase to obtain an eluate fraction g; and (5) purifying the eluate fraction g by silica gel column chromatography using hexane/ethyl acetate gradient as the mobile phase to obtain a specific eluate fraction which could be purified further to obtain the anti-cancer active substance from Antrodia Cinnamomea.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.

Abstract: An embodiment apparatus includes a dielectric layer in a die, a conductive trace in the dielectric layer, and a protrusion bump pad on the conductive trace. The protrusion bump pad at least partially extends over the dielectric layer, and the protrusion bump pad includes a lengthwise axis and a widthwise axis. A ratio of a first dimension of the lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.

Abstract: A package includes a package substrate, which includes a middle layer selected from the group consisting of a core and a middle metal layer, a top metal layer overlying the middle layer, and a bottom metal layer underlying the middle layer. All metal layers overlying the middle layer have a first total metal density that is equal to a sum of all densities of all metal layers over the middle layer. All metal layers underlying the middle layer have a second total metal density that is equal to a sum of all densities of all metal layers under the middle layer. An absolute value of a difference between the first total metal density and the second total metal density is lower than about 0.1.

Abstract: An embodiment apparatus includes a dielectric layer in a die, a conductive trace in the dielectric layer, and a protrusion bump pad on the conductive trace. The protrusion bump pad at least partially extends over the dielectric layer, and the protrusion bump pad includes a lengthwise axis and a widthwise axis. A ratio of a first dimension of the lengthwise axis to a second dimension of the widthwise axis is about 0.8 to about 1.2.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: A package includes a package substrate, which includes a middle layer selected from the group consisting of a core and a middle metal layer, a top metal layer overlying the middle layer, and a bottom metal layer underlying the middle layer. All metal layers overlying the middle layer have a first total metal density that is equal to a sum of all densities of all metal layers over the middle layer. All metal layers underlying the middle layer have a second total metal density that is equal to a sum of all densities of all metal layers under the middle layer. An absolute value of a difference between the first total metal density and the second total metal density is lower than about 0.1.

Abstract: An integrated circuit (IC) packaging substrate includes a main body, at least one first conductive line, at least one second conductive line, and at least one protrusion pad. The first conductive line is embedded in the main body. The second conductive line is embedded in the main body. The protrusion pad is disposed on the first conductive line. The protrusion pad protrudes from the main body and is configured to be in electrical contact with a solder portion of a semiconductor chip. A first spacing between the protrusion pad and the second conductive line is determined in accordance with a process deviation of the protrusion pad by the width of the protrusion pad and the width of the first conductive line. Moreover, a semiconductor package having the IC packaging substrate and a manufacturing method of the semiconductor package are also provided.

Abstract: A method that comprises converting a first electrical signal to a second electrical signal using a converter coupled between a micro-mechanical structure and an analog-to-digital converter (ADC). The method also comprises actuating a switch to selectively interpolate at least one datum between two neighboring converted second electrical signals based on a selected clock signal, wherein the selected clock signal is one of a plurality of clock signals, each clock signals of the plurality of clock signals has a corresponding frequency, and the selected clock signal corresponds to an operating mode of the micro-mechanical structure.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: A micro-electro-mechanical system (MEMS) includes a micro-mechanical structure that generates a first electrical signal. An analog-to-digital converter (ADC) is coupled with the micro-mechanical structure. The first electrical signal is converted to a second electrical signal using a converter coupled between the micro-mechanical structure and the ADC. The first electrical signal is free from being amplified.

Abstract: A package includes a package substrate, which includes a middle layer selected from the group consisting of a core and a middle metal layer, a top metal layer overlying the middle layer, and a bottom metal layer underlying the middle layer. All metal layers overlying the middle layer have a first total metal density that is equal to a sum of all densities of all metal layers over the middle layer. All metal layers underlying the middle layer have a second total metal density that is equal to a sum of all densities of all metal layers under the middle layer. An absolute value of a difference between the first total metal density and the second total metal density is lower than about 0.1.

Abstract: An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal bump on the under bump metallurgy feature, and a substrate trace on a substrate, the substrate trace coupled to the metal bump through a solder joint and intermetallic compounds, a ratio of a first cross sectional area of the intermetallic compounds to a second cross sectional area of the solder joint greater than forty percent.