Patents by Inventor Yu-Wei Lin
Yu-Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240077762Abstract: A display is disclosed. The display comprises a display panel, and an optical film disposed on a viewing side of the display panel. The optical film has a total haze ranging from 15% to 60%, an inner haze less than or equal to 10%, and a reflectivity satisfying the relationships of 0.35%?(RSCI-RSCE)?1.50% and RSCE?1.50%, wherein RSCI is an average reflectivity of diffuse component and specular component, and RSCE is an average reflectivity of diffuse component. By adjusting the total haze, inner haze and reflectivity of the optical film to satisfy the above relationship, the display can have good anti-glare properties, and the contrast ratio of the display will not be reduced too much to avoid the display quality be affected.Type: ApplicationFiled: April 10, 2023Publication date: March 7, 2024Applicant: BenQ Materials CorporationInventors: Yu-Wei Tu, Chih-Wei Lin, Kuo-Hsuan Yu
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Publication number: 20240078979Abstract: An electronic device including a display device is provided. The display device includes a sharing area, a junction area, and a privacy area. The junction area is positioned between the sharing area and the privacy area. The display device includes a privacy panel. A transmittance of the privacy panel corresponding to the sharing area is greater than a transmittance of the privacy panel corresponding to the junction area, and the transmittance of the privacy panel corresponding to the junction area is greater than a transmittance of the privacy panel corresponding to the privacy area.Type: ApplicationFiled: August 8, 2023Publication date: March 7, 2024Applicants: Innolux Corporation, CARUX TECHNOLOGY PTE. LTD.Inventors: Li-Wei Sung, Chia-Hsien Lin, Cheng-Wu Lin, Yu-Ming Wu
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Publication number: 20240081078Abstract: A memory device includes a multi-layer stack, a channel layer, a memory material layer and at least three conductive pillars. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer and memory material layer penetrate through the plurality of conductive layers and the plurality of dielectric layers. The at least three conductive pillars are surrounded by the channel layer and the memory material layer, wherein the at least three conductive pillars are electrically connected to conductive layers respectively. The at least three conductive pillars includes a first, a second and a third conductive pillars disposed between the first conductive pillar and the second conductive pillar. A third width of the third conductive pillar is smaller than a first width of the first conductive pillar and a second width of the second conductive pillar.Type: ApplicationFiled: January 10, 2023Publication date: March 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Jiang, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
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Patent number: 11922863Abstract: A display panel and a pixel circuit thereof are provided. The pixel circuit includes a driving current generator, a pulse width signal generator, a voltage provider, and a current enabler. The driving current generator provides a driving current. The pulse width signal generator includes an output switch. The output switch is controlled by a control signal, and provides a pulse width signal according to the control signal. The voltage provider adjusts the control signal according to a data write-in signal and a pulse width modulation enable signal. The current enabler provides the driving current to a lighting component according to the pulse width signal and an amplitude modulation enable signal.Type: GrantFiled: December 22, 2022Date of Patent: March 5, 2024Assignee: AUO CorporationInventors: Che-Wei Tung, Mei-Yi Li, Che-Chia Chang, Yu-Chieh Kuo, Yu-Zuo Lin
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Patent number: 11923459Abstract: A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.Type: GrantFiled: April 12, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hung Wei Li, Mauricio Manfrini, Sai-Hooi Yeong, Yu-Ming Lin
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Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240071947Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.Type: ApplicationFiled: August 30, 2022Publication date: February 29, 2024Inventors: Yu-Ling Tsai, Lai Wei Chih, Meng-Tsan Lee, Hung-Pin Chang, Li-Han Hsu, Chien-Chia Chiu, Cheng-Hung Lin
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Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240072170Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.Type: ApplicationFiled: August 24, 2022Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Yu-Shih Wang, Yih-Ann Lin, Chia Ming Liang, Ryan Chia-Jen CHEN
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Publication number: 20240071981Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.Type: ApplicationFiled: November 1, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
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Publication number: 20240069069Abstract: A probe pin cleaning pad including a foam layer, a cleaning layer, and a polishing layer is provided. The cleaning layer is disposed between the foam layer and the polishing layer. A cleaning method for a probe pin is also provided.Type: ApplicationFiled: November 10, 2023Publication date: February 29, 2024Applicant: Alliance Material Co., Ltd.Inventors: Chun-Fa Chen, Yu-Hsuen Lee, Ching-Wen Hsu, Chao-Hsuan Yang, Ting-Wei Lin
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Patent number: 11913047Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.Type: GrantFiled: January 7, 2022Date of Patent: February 27, 2024Assignee: GLAC BIOTECH CO., LTD.Inventors: Hsieh-Hsun Ho, Ching-Wei Chen, Yu-Fen Huang, Chen-Hung Hsu, Wen-Yang Lin, Yi-Wei Kuo, Shin-Yu Tsai
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Patent number: 11903188Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.Type: GrantFiled: February 16, 2022Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Perng-Fei Yuh, Yih Wang, Meng-Sheng Chang, Jui-Che Tsai, Ku-Feng Lin, Yu-Wei Lin, Keh-Jeng Chang, Chansyun David Yang, Shao-Ting Wu, Shao-Yu Chou, Philex Ming-Yan Fan, Yoshitaka Yamauchi, Tzu-Hsien Yang
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Publication number: 20230314510Abstract: Methods and systems for performing data correction and phase optimization are disclosed herein. In some implementations, a system for performing data correction comprises: an analog to digital converter (ADC) configured to receive differential data from a continuous time linear equalizer (CTLE) and generate a bitstream comprising a plurality of data bits and a corresponding plurality of data sign bits; a decision feedback equalization (DFE) block configured to receive the bitstream from the ADC and provide data to a clock and data recovery (CDR) block; and data correction circuitry. In some implementations, the data correction circuitry is configured to: receive the bitstream from the ADC; determine whether to correct a data sign bit; responsive to determining the data sign bit is to be corrected, flip the data sign bit; and provide the plurality of data sign bits, including the flipped data sign bits, to the DFE.Type: ApplicationFiled: March 31, 2022Publication date: October 5, 2023Inventors: Yu-Wei Lin, Nanyuan Chen
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Patent number: 11736266Abstract: Disclosed are some examples of Phase interpolator circuitry used in retimer systems. The phase interpolator circuitry includes a phase interpolator configured to: receive the phase control signal, generate, based on the phase control signal, an output clock signal, and provide the output clock signal to the transmitter to track a plurality data packets. Phase interpolator circuitry is coupled with clock data recovery circuitry. In some implementations, clock data recovery circuitry is coupled between a receiver and a transmitter. The clock data recovery circuitry is configured to: extract a data component from an input data signal associated with the receiver, provide the data component to the transmitter, and generate a phase control signal.Type: GrantFiled: September 27, 2022Date of Patent: August 22, 2023Assignee: Diodes IncorporatedInventors: Yu-Wei Lin, Yi Sheng Lin, Nanyuan Chen
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Publication number: 20230262969Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.Type: ApplicationFiled: February 16, 2022Publication date: August 17, 2023Inventors: PERNG-FEI YUH, YIH WANG, MENG-SHENG CHANG, JUI-CHE TSAI, KU-FENG LIN, YU-WEI LIN, KEH-JENG CHANG, CHANSYUN DAVID YANG, SHAO-TING WU, SHAO-YU CHOU, PHILEX MING-YAN FAN, YOSHITAKA YAMAUCHI, TZU-HSIEN YANG
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Publication number: 20230187383Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a package frame. The semiconductor package is disposed on the circuit substrate. The package frame is disposed over the circuit substrate. The package frame encircles the semiconductor package. The semiconductor package has a first surface facing the circuit substrate and a second surface opposite to the first surface. The package frame leaves exposed at least a portion of the second surface of the semiconductor package. The package frame forms a cavity, which cavity encircles the semiconductor package.Type: ApplicationFiled: February 3, 2023Publication date: June 15, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Lin, Chun-Yen Lan, Tzu-Ting Chou, Tzu-Shiun Sheu, Chih-Wei Lin, Shih-Peng Tai, Wei-Cheng Wu, Ching-Hua Hsieh
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Publication number: 20230122556Abstract: Disclosed are some examples of Phase interpolator circuitry used in retimer systems. The phase interpolator circuitry includes a phase interpolator configured to: receive the phase control signal, generate, based on the phase control signal, an output clock signal, and provide the output clock signal to the transmitter to track a plurality data packets. Phase interpolator circuitry is coupled with clock data recovery circuitry. In some implementations, clock data recovery circuitry is coupled between a receiver and a transmitter. The clock data recovery circuitry is configured to: extract a data component from an input data signal associated with the receiver, provide the data component to the transmitter, and generate a phase control signal.Type: ApplicationFiled: September 27, 2022Publication date: April 20, 2023Applicant: Diodes IncorporatedInventors: Yu-Wei Lin, Yi Sheng Lin, Nanyuan Chen
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Patent number: 11600319Abstract: A memory system includes a plurality of first memory units, a plurality of read word lines, and a plurality of read bit lines. Each first memory unit of the plurality of first memory units includes a second memory unit, a first transistor coupled to the second memory unit, and a second transistor coupled to the second memory unit and the first transistor. Each read word line of the plurality of read word lines is coupled to a plurality of first transistors disposed along a corresponding row. Each read bit line of the plurality of read bit lines is coupled to a plurality of second transistors disposed along a corresponding column.Type: GrantFiled: June 18, 2021Date of Patent: March 7, 2023Assignee: National Cheng Kung UniversityInventors: Lih-Yih Chiou, Yu-Wei Lin, Wei-Shuo Ling
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Publication number: 20230067664Abstract: A package structure includes a circuit substrate, a package element and a molding layer. The package element is disposed on the circuit substrate and is electrically connected with the circuit substrate. The molding layer is disposed over the circuit substrate and covers at least a top surface of the circuit substrate. The molding layer includes a first portion wrapping around sidewalls of the package element and having a first thickness, and a second portion surrounding the first portion and connected with the first portion. The first thickness of the first portion is larger than a second thickness of the second portion. A top surface of the first portion of the molding layer is higher than a top surface of the package element.Type: ApplicationFiled: July 15, 2022Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chao-Wei Li, Tzu-Ting Chou, Chun-Yen Lan, Yu-Wei Lin, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh