Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.

Abstract: This invention relates to the field of plastic waste decomposition. More specifically, the invention comprises products obtained from the decomposition of plastic waste.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.

Abstract: A method includes forming a doped region on a top portion of a substrate, forming a first epitaxial layer over the substrate, forming a recess in the first epitaxial layer, the recess being aligned to the doped region, performing a surface clean treatment in the recess, the surface clean treatment includes: oxidizing surfaces of the recess to form an oxide layer in the recess, and removing the oxide layer from the surfaces of the recess, and forming a second epitaxial layer in the recess.

Abstract: A method for fabrication of a semiconductor structure according to some embodiments of the present disclosure comprises following steps. A first mandrel is formed over a target layer over a substrate, wherein the first mandrel comprises a mandrel island connecting a first mandrel strip and a second mandrel strip. A first spacer is formed along first and second sidewalls of the mandrel island, the first mandrel strip, and the second mandrel strip. The first mandrel is then removed, and the target layer is patterned with the first spacer remains over the target layer. The first mandrel strip and the second mandrel strip are misaligned from one another.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.

Abstract: A method comprises following steps. A first mandrel is formed over a target layer over a substrate, wherein the first mandrel comprises a mandrel island and a first mandrel strip, the mandrel island comprises a first sidewall and a second sidewall perpendicular to the first sidewall, and the first mandrel strip extends from the first sidewall of the mandrel island. A first spacer is formed along the first and second sidewalls of the mandrel island and a sidewall of the first mandrel strip. The first mandrel is removed from the target layer. The target layer is patterned when the first spacer remains over the target layer.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: This invention relates to the field of contaminated plastic waste decomposition. More specifically, the invention comprises methods and systems to decompose contaminated plastic waste and transform it into value-added products.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A probe module includes a circuit board and at least one probe formed on a probe installation surface of the circuit board by a microelectromechanical manufacturing process and including a probe body and a probe tip. The probe body includes first and second end portions and a longitudinal portion having first and second surfaces facing toward opposite first and second directions. The probe tip extends from the probe body toward the first direction and is processed with a gradually narrowing shape by laser cutting. The first and/or second end portion has a supporting seat protruding from the second surface toward the second direction and connected to the probe installation surface, such that the longitudinal portion and the probe tip are suspended above the probe installation surface. The probe has a tiny pinpoint for detecting tiny electronic components, and its manufacturing method is time-saving and high in yield rate.

Abstract: This invention relates to the field of contaminated plastic waste decomposition. More specifically, the invention comprises methods and systems to decompose contaminated plastic waste and transform it into value-added products.

Abstract: This invention relates to the field of plastic waste decomposition. More specifically, the invention comprises products obtained from the decomposition of plastic waste.

Abstract: A method comprises following steps. A first mandrel is formed over a target layer over a substrate, wherein the first mandrel comprises a mandrel island and a first mandrel strip, the mandrel island comprises a first sidewall and a second sidewall perpendicular to the first sidewall, and the first mandrel strip extends from the first sidewall of the mandrel island. A first spacer is formed along the first and second sidewalls of the mandrel island and a sidewall of the first mandrel strip. The first mandrel is removed from the target layer. The target layer is patterned when the first spacer remains over the target layer.

Abstract: This invention relates to the field of contaminated plastic waste decomposition. More specifically, the invention comprises methods and systems to decompose contaminated plastic waste and transform it into value-added products.

Abstract: This invention relates to the field of plastic waste decomposition. More specifically, the invention comprises products obtained from the decomposition of plastic waste.

Abstract: This invention relates to the field of plastic waste decomposition. More specifically, the invention comprises products obtained from the decomposition of plastic waste.

Abstract: This invention relates to the field of contaminated plastic waste decomposition. More specifically, the invention comprises methods and systems to decompose contaminated plastic waste and transform it into value-added products.

Abstract: A method of making a cantilever MEMS probe module includes the steps of forming a cantilever MEMS probe on a first surface of a circuit substrate by a MEMS fabrication process in a way that the cantilever MEMS probe has a support post electrically and mechanically connected with an electric contact of the first surface, a cantilever arm connected with the support post, and a needle connected with the cantilever arm, and forming a through hole penetrating through the first surface and a second surface opposite to the first surface of the circuit substrate and corresponding in position to the needle and a part of the cantilever arm by using a cutting tool to cut the circuit substrate from the second surface toward the first surface of the circuit substrate. A probe module made by the method is disclosed too.