Abstract: A method of making a cantilever MEMS probe module includes the steps of forming a cantilever MEMS probe on a first surface of a circuit substrate by a MEMS fabrication process in a way that the cantilever MEMS probe has a support post electrically and mechanically connected with an electric contact of the first surface, a cantilever arm connected with the support post, and a needle connected with the cantilever arm, and forming a through hole penetrating through the first surface and a second surface opposite to the first surface of the circuit substrate and corresponding in position to the needle and a part of the cantilever arm by using a cutting tool to cut the circuit substrate from the second surface toward the first surface of the circuit substrate. A probe module made by the method is disclosed too.

Abstract: A method for forming a semiconductor device structure includes providing a substrate having a first fin structure and a second fin structure that are capped by a patterned hard mask structure. A liner layer and an overlying insulating layer are formed between the first and second fin structures. A multi-step etching process including a first step of selectively removing the patterned hard mask structure and a second step of in-situ and selectively removing a portion of the insulating layer to form an isolation feature is performed. The process gas used in the multi-step etching process includes a first etching gas and a second etching gas. The flow rate of the first etching gas is greater than that of the second etching gas in the first step and the flow rate of the first etching gas is less than that of the second etching gas in the second step.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A method of making a cantilever MEMS probe module includes the steps of forming a cantilever MEMS probe on a first surface of a circuit substrate by a MEMS fabrication process in a way that the cantilever MEMS probe has a support post electrically and mechanically connected with an electric contact of the first surface, a cantilever arm connected with the support post, and a needle connected with the cantilever arm, and forming a through hole penetrating through the first surface and a second surface opposite to the first surface of the circuit substrate and corresponding in position to the needle and a part of the cantilever arm by using a cutting tool to cut the circuit substrate from the second surface toward the first surface of the circuit substrate. A probe module made by the method is disclosed too.

Abstract: A multi-channel wavelength division multiplexing/demultiplexing device includes optical filters for respective optical channels, and at least one microlens. The optical filters guide a light beam to travel along a preset optical path, and each optical filter filters a specific and different range of wavelength, and has a first surface for incident and reflective light, and a second surface for outgoing light through penetration as an output beam for the corresponding channel. Each microlens is installed between two adjacent optical filters to adjust optical beam shape of the traveling light along the optical path, particularly, altering a beam waist of a Gaussian beam and an imaging position to greatly increase optical efficiency of collimators for the whole system.

Abstract: A foldable frame assembly for a playpen includes a collapsible bottom frame which has a central support mount, a plurality of linking elements, a plurality of first linking rods and a plurality of second linking rods. The linking elements are pivoted between the central support mount and the lower end of the plurality of pillars respectively. Each of the linking elements is provided with a sliding part for moving along the linking elements. When the central support mount was lifted upward, the second linking rods are associated with the first linking rods through the sliding parts thereby incurring an inward torque to prevent the pillars from deflecting outward. By such of the inward torque, users can save their troublesome of stretching hands to hold and keep the pillars uprightly while converting the playpen into its folded configuration.

Abstract: A foldable frame assembly for a playpen includes a collapsible bottom frame which has a central support mount, a plurality of linking elements, a plurality of first linking rods and a plurality of second linking rods. The linking elements are pivoted between the central support mount and the lower end of the plurality of pillars respectively. Each of the linking elements is provided with a sliding part for moving along the linking elements. When the central support mount was lifted upward, the second linking rods are associated with the first linking rods through the sliding parts thereby incurring an inward torque to prevent the pillars from deflecting outward. By such of the inward torque, users can save their troublesome of stretching hands to hold and keep the pillars uprightly while converting the playpen into its folded configuration.

Abstract: A manufacturing method for a metal gate includes providing a substrate having a dielectric layer and a polysilicon layer formed thereon, the polysilicon layer, forming a protecting layer on the polysilicon layer, forming a patterned hard mask on the protecting layer, performing a first etching process to etch the protecting layer and the polysilicon layer to form a dummy gate having a first height on the substrate, forming a multilayered dielectric structure covering the patterned hard mask and the dummy gate, removing the dummy gate to form a gate trench on the substrate, and forming a metal gate having a second height in the gate trench. The second height of the metal gate is substantially equal to the first height of the dummy gate.

Abstract: A manufacturing method for a semiconductor structure includes providing a substrate having at least a gate structure formed thereon, performing a first wet etching process to etch the substrate at two sides of the gate structure, performing a second wet etching process to etch the substrate to form a recess respectively at two sides of the gate structure, and performing a selective epitaxial growth method to form an epitaxial layer having a diamond shape with a flat bottom respectively in the recess.

Abstract: A manufacturing method for a metal gate includes providing a substrate having a dielectric layer and a polysilicon layer formed thereon, the polysilicon layer, forming a protecting layer on the polysilicon layer, forming a patterned hard mask on the protecting layer, performing a first etching process to etch the protecting layer and the polysilicon layer to form a dummy gate having a first height on the substrate, forming a multilayered dielectric structure covering the patterned hard mask and the dummy gate, removing the dummy gate to form a gate trench on the substrate, and forming a metal gate having a second height in the gate trench. The second height of the metal gate is substantially equal to the first height of the dummy gate.

Abstract: A manufacturing method for a semiconductor structure includes providing a substrate having at least a gate structure formed thereon, performing a first wet etching process to etch the substrate at two sides of the gate structure, performing a second wet etching process to etch the substrate to form a recess respectively at two sides of the gate structure, and performing a selective epitaxial growth method to form an epitaxial layer having a diamond shape with a flat bottom respectively in the recess.

Abstract: An adjustable shoulder strap mechanism for baby stroller, provides with a pair of shoulder straps adjustable in height for suitable use of baby or child occupant of different size. The upper end of the shoulder straps can be repositioned by manipulating a driving mechanism accessible on the rear side of the backrest of a stroller. In a preferred embodiment, a head cushioning pad is disposed on the front side of the backrest, following the adjustment of the upper end of the shoulder straps.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)4-x to allow the silica moiety to carry a photo-polymerizable unsaturated group; adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9 and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4?x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.