Abstract: A capacitor device and a manufacturing method thereof are disclosed in the present invention. The capacitor device includes pad structures, bottom electrodes, a top electrode, and a dielectric layer. The bottom electrodes are disposed on the pad structures, respectively. The top electrode is disposed on the bottom electrodes. The dielectric layer is disposed between the top electrode and the bottom electrodes. The top electrode includes at least one void. The manufacturing throughput of the manufacturing method of the memory device may be enhanced accordingly.

Abstract: An image interpolation method comprises applying a filter to an RGBIR image to generate a LUMA image; calculating two gradients according to the LUMA image; and interpolating a missing pixel between two pixels in the RGBIR image according to the two gradients. Wherein each gradient corresponding to two LUMA pixels in the LUMA image. An image fusion method comprises applying a filter to an RGBIR image to generate a LUMA image; obtaining an R-image, a G-image, a B-image and an IR image according to the RGBIR image; and generating a fusion image according to the R-image, G-image, B-image, the IR image and the LUMA image.

Abstract: A circuit of a resonant power converter comprising: a high-side switch and a low-side switch, coupled to form a half-bridge switching circuit which is configured to switch a transformer for generating an output voltage; a high-side drive circuit, generating a high-side drive signal coupled to drive the high-side switch in response to a high-side control signal; a bias voltage, coupled to a bootstrap diode and a bootstrap capacitor providing a power source from the bootstrap capacitor for the high-side drive circuit; wherein the high-side drive circuit generates the high-side drive signal with a fast slew rate to turn on the high-side switch when the high-side switch is to be turned on with soft-switching; the high-side drive circuit generates the high-side drive signal with a slow slew rate to turn on the high-side switch when the high-side switch is to be turned on without soft-switching.

Abstract: An electrode for a lithium-ion battery is provided, which comprises: a current collector; and an electrode material layer disposed on the current collector, wherein the electrode material layer comprises an anode material and a binder, the binder is pectin, its derivative or a combination thereof, and the anode material is selected from the group consisting of lithium vanadium oxide, lithium titanium oxide, lithium iron oxide, graphite, and a combination thereof. In addition, a lithium-ion battery comprising the aforesaid electrode is also provided.

Abstract: Embodiments of the present disclosure relate to the field of acoustic sensing demodulation with high signal-to-noise ratio, real-time demodulation, and high sensitivity, and in particular, to a parallel sensing and demodulation system for acoustic waves based on dual optical frequency combs. The present disclosure introduces dual optical frequency combs as multi-path parallel input light sources, leveraging features of the dual optical frequency combs including narrow linewidth, stable power, high sensitivity, and the capability of precisely converting signals from the optical domain to the radio frequency domain, so the dual optical frequency combs can be used as multi-channel parallel input light sources for acoustic array detection. Besides, some embodiments of the present disclosure employ three-wavelength adaptive demodulation technology to ensure that the detection of acoustic wave signals at every moment has a high signal-to-noise ratio and improved sensitivity for detecting weak signals.

Abstract: A method includes forming an epitaxial source/drain region in a substrate; forming a first inter-layer dielectric over the epitaxial source/drain region; forming a gate stack over the substrate and adjacent to the first inter-layer dielectric; forming a gate mask over the gate stack; forming a source/drain plug through the first inter-layer dielectric and electrically connected to the epitaxial source/drain region; depositing a dielectric layer over the gate mask and the first inter-layer dielectric, the dielectric layer having a different etch selectivity than the gate mask; forming a second inter-layer dielectric over the dielectric layer; etching an opening through the second inter-layer dielectric and the dielectric layer, the opening exposing the source/drain plug and the gate mask; and forming a conductive feature in the opening, the conductive feature being electrically connected to the source/drain plug.

Abstract: A display substrate, a manufacturing method thereof and a display device. The display substrate includes a base substrate, a pixel driving circuit layer and an antenna layer, wherein the pixel driving circuit layer is arranged on the base substrate and includes a thin film transistor and a plurality of signal lines, and the antenna layer is arranged on a side of the pixel driving circuit layer far away from the pixel driving circuit layer and comprises a first antenna arranging region including a first antenna network formed by a plurality of first antenna lines; wherein in a direction perpendicular to the display substrate, at least a portion of the first antenna lines overlap with at least a portion of the signal lines.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate and a plurality of pixels arranged on the base substrate, each pixel includes a plurality of sub-pixels, and each sub-pixel includes a first active layer, a first gate insulation layer, a gate electrode, a second gate insulation layer, a second active layer, a first insulation layer, a source electrode and a drain electrode laminated one on another. The source electrode is connected with the first active layer through a via hole penetrating through the first insulation layer, the second gate insulation layer and the first gate insulation layer, and the source electrode and the drain electrode are connected with the second active layer through a via hole penetrating through the first insulation layer.

Abstract: This application relates to an electric vehicle, a thermal management system, and a method for controlling same. The thermal management system includes: a passenger compartment thermal management subsystem, including a compressor, a first throttle, and an evaporator configured to refrigerate the passenger compartment, where the compressor, the first throttle, and the evaporator are controlled to communicate with each other in sequence to form a first refrigerant circuit, the passenger compartment thermal management subsystem further includes a condenser, and the condenser is disposed between the compressor and the first throttle and able to exchange heat with the first refrigerant circuit; a heat emitting component thermal management subsystem, including a heat emitting component and a cooling water tank configured to cool the heat emitting component, and a control valve system, connected to the passenger compartment thermal management subsystem and the heat emitting component thermal management subsystem.

Abstract: A method (fabricating a fusible structure) includes forming a metal line that extends in a first direction, the forming a metal line including: configuring the mask such that the metal line has a first portion that is between a second portion and a third portion; and using an optical proximity correction technique with a mask so that the first portion has a first thickness that is thinner than a second thickness of each of the second portion and the third portion; and forming a first dummy structure proximal to the metal line and aligned with the first portion relative to the first direction.

Abstract: In an image comparison method, an original reference image and an original test image are obtained. The original reference image and the original test image are binarized to obtain a reference binary image and a test binary image. The reference binary image and the test binary image are detected edges to obtain a reference edge image and a test edge image. A morphological expansion is performed on the reference edge image to obtain an expanded reference edge image. An OR operation is performed on the extended reference edge image and the test edge image to obtain an extended test edge image. An XOR operation is performed on the expanded reference edge image and the expanded test edge image. The method improves the accuracy of image comparison.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, forming a buffer layer on the substrate, forming a mesa isolation on the HEMT region, forming a HEMT on the mesa isolation, and then forming a capacitor on the capacitor region. Preferably, a bottom electrode of the capacitor contacts the buffer layer directly.

Abstract: A method and an apparatus for obtaining an extended depth of field image, where the method includes: determining a target focal length range based on an initial focal length, where the target focal length range includes the initial focal length; obtaining a plurality of images of a photographed object for a plurality of focal lengths in the target focal length range; and registering and fusing the plurality of images to obtain an extended depth of field image. The target focal length range of concern to a user is selected based on the initial focal length, such that there is no need to obtain images of all focal lengths of a lens, a quantity of obtained images and processing time of registration and fusion can be reduced.

Abstract: Embodiments of the present disclosure provide a transmission method and a device. The method includes: determining first spatial information; and receiving, in CSS and/or USS according to the first spatial information, a random access response message of a 2-step random access procedure triggered by beam failure recovery (BFR). The terminal can receive, in common search space and/or UE-specific search space, the random access response message of the 2-step random access procedure triggered by the beam failure recovery (BFR), so that reliability of a communications system can be improved.

Abstract: A memory module with improved timing adaptivity of sensing amplification, comprises at least one sensing amplifier, a tracking word line, a tracking bit line and a pulse-width controller. The tracking word line comprises a front node and an end node. Each said sensing amplifier is enabled/disabled when an enabling signal is activated/deactivated. The pulse-width controller is coupled to the tracking bit line, the front node and the end node. When a voltage of the tracking bit line changes to a predetermined voltage, the pulse-width controller activates the enabling signal, and causes a voltage of the front node to change. When the voltage of the front node changes, the tracking word line causes a voltage of the end node to change after a first delay time. When the voltage of the end node changes, the pulse-width controller deactivates the enabling signal after a second delay time.

Abstract: A multilayer polymer capacitor (MLPC), including a casing, a multilayer core, an electroplated positive terminal, a first electroplated negative terminal, and a second electroplated negative terminal. The casing includes a casing body and a cover plate. The casing body is provided with an accommodating cavity, whose bottom is provided with a through hole. The multilayer core is provided in the accommodating cavity. An anode lead-out part and a cathode lead-out part are provided at two ends of the accommodating cavity, respectively. The electroplated positive terminal and the first electroplated negative terminal are provided on outer side surfaces of two ends of the casing, respectively. The second electroplated negative terminal is provided on an outer bottom surface of the casing, and is electrically connected to the multilayer core.

Abstract: Molding equipment for a fusion-reactor armored conductor is provided, relating to the technical field of four-sided extrusion molding machines. The molding equipment includes a molding machine body, a pressing device and a shaping device are sequentially arranged inside the molding machine body. The pressing device includes four driving devices, each driving device includes a servo motor, a transmission device, a pressing roller, a power output shaft, and a pressing support. The servo motor drives the power output shaft to rotate through the transmission device, the pressing roller is arranged on the power output shaft, and the power output shaft is connected to the pressing support through a copper sleeve sliding bearing. The shaping device includes four shaping rollers. Each of the pressing device and the shaping device is internally provided with a roller adjusting device.

Abstract: Certain aspects of the present disclosure provide techniques for channel state information (CSI) reporting with frequency domain (FD) compression. A method that can be performed by a user equipment (UE) includes determining the size of the intermediate set based on one or more parameters included in the CSI report configuration, determining one or more FD bases for each layer based on the intermediate set, wherein the one or more FD bases are characterized by an M value indicative of a number of the one or more FD bases and based on the CSI report configuration, and reporting the one or more FD bases for each layer based on the size of the intermediate set.

Abstract: An adhered multilayer die unit includes at least one probe zone and at least one non-probe zone for probes to be inserted in the probe zone. The adhered multilayer die unit includes dies and at least one adhesive layer. Each die includes at least one connecting surface, and through holes in the at least one probe zone for the probes to be inserted through the through holes of each die. The at least one adhesive layer adheres the connecting surfaces of the dies to each other. The at least one adhesive layer is entirely in the at least one non-probe zone. Accordingly, the adhered multilayer die unit of the invention has great structural strength in large-area condition, avoids drilling process difficulty problem and size restriction of fastening combining manner, avoids adhesive spillage and its affection on probes, and avoids adhesive-caused problems of adhesive spillage and die levelness deviation.