Abstract: A method for forming an isolation structure includes following operations. A trench is formed in a semiconductor substrate. A first insulating layer covering a bottom and sidewalls of the trench is formed. A charge-trapping layer is formed on the first insulating layer. The trench is filled with a second insulating layer. The charge-trapping layer include a material different from those of the first insulating layer and the second insulating layer.

Abstract: The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.

Abstract: The present invention relates to the mRNA vaccine of coronavirus spike protein with deletion of glycosites in the receptor binding domain (RBD), the subunit 1 (S1) domain, or the subunit 2 (S2) domain, or a combination thereof. The vaccine elicits broadly protective immune responses coronavirus and variants thereof.

Abstract: A chip packaging structure and a method for fabricating the same are provided. The chip package structure includes a conductive substrate, a dam and a metal shielding layer. The conductive substrate includes a substrate, vias and electrodes. The substrate has first and second board surfaces opposite to each other. The vias penetrate through the first board surface and the second board surface, and a part of the vias is disposed in a first die-bonding region on which a chip is to be arranged. The electrodes extend from the first board surface to the second board surface through the vias. The dam is formed on the first board surface to surround the first die-bonding region, and the dam has a height higher than that of the chip. The metal shielding layer covers the dam and a part of the first board surface that do not overlap with the electrodes.

Abstract: The disclosure relates to processing application programming interface (API) requests. Embodiments include receiving, at an API wrapper, from a first caller, a first call to an API and sending the first call to the API. Embodiments include receiving, by the API wrapper, from one or more second callers, a second one or more calls to the API prior to receiving a response from the API to the first call. Embodiments include receiving, by the API wrapper, the response from the API to the first call and responding to the first call from the first caller with the response from the API to the first call. Embodiments include responding, by the API wrapper, to the second one or more calls from the one or more second callers with the response from the API to the first call without sending the second one or more calls to the API.

Abstract: Provided is engineered microorganisms expressing acetoacetyl-CoA reductase variants and a method for improving the yield of PHA. Compared with the wild-type acetoacetyl-CoA reductase represented by SEQ ID NO. 31, the variant has one or more of the following mutations: (1) mutation of valine at position 141 to isoleucine or leucine; (2) mutation of methionine at position 12 to threonine, serine, alanine, leucine, lysine or isoleucine; (3) mutation of isoleucine at position 194 to valine, leucine or methionine; (4) mutation of glutamic acid at position 42 to lysine, glutamine, leucine, aspartic acid, proline, threonine, asparagine, or histidine; and (5) mutation of phenylalanine at position 55 to valine, alanine or isoleucine. The variants and their coding genes can promote the synthesis and accumulation of PHA by the strain and increase the yield of PHA.

Abstract: A transparent display panel with driving electrode regions, circuit wiring regions, and optically transparent regions is provided. The driving electrode regions are arranged into an array in a first direction and a second direction. An average light transmittance of the circuit wiring regions is less than ten percent, and an average light transmittance of the optically transparent regions is greater than that of the driving electrode regions and the circuit wiring regions. The first direction intersects the second direction. The circuit wiring regions connect the driving electrode regions at intervals, such that each optically transparent region spans among part of the driving electrode regions. The transparent display panel includes first signal lines and second signal lines extending along the circuit wiring regions, and each circuit wiring region is provided with at least one of the first signal lines and at least one of the second signal lines.

Abstract: The present invention relates to the field of medical biology, and discloses a single domain antibody and derivative proteins thereof against CTLA4. In particular, the present invention discloses a CTLA4 binding protein and the use thereof, especially the use for treating and/or preventing CTLA4 relevant diseases such as tumor.

Abstract: An implant delivery tube fitting (12) and an implant delivery system. The implant delivery tube fitting (12) is used for loading and delivering an implant, and the implant delivery tube fitting (12) comprises, sequentially from a proximal end to a distal end, an outer tube (122) and a capsule (121). The inner lumen of the capsule (121) is adapted to receive an implant, and the capsule (121) is provided at the distal end of the outer tube (122). The capsule (121) has a telescopic structure, and the outer tube (122) can drive the capsule (121) to make a telescopic movement so that the capsule (121) is lengthened or shortened.

Abstract: The present application discloses a method and apparatus for training a semantic representation model, a device and a computer storage medium, which relates to the field of natural language processing technologies in artificial intelligence.

Abstract: An injection machine for producing degradable edible objects includes a material pipe with an axial pipeline and an injection head; a spiral rod being a screw thread passed into the pipeline and having a feeding section, a compressed section and a metering section, and the feeding and metering sections separately having equal diameters, and the metering section having an outer diameter greater than that of the feeding section, and the compressed section having an outer diameter gradually increasing from the feeding section to the metering section, and the front end of the spiral rod being provided with a spiral rod head, and an injection nozzle being screwed with the injection head, and the heating unit being installed on the outer peripheral surfaces of the material pipe, the injection head and the injection nozzle.

Abstract: Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.

Abstract: A digital and informationized fully-automatic aluminum thermal-spraying production line includes: an automatic feeding system including first transfer mechanisms and first carrying conveying mechanisms; a laser cleaning system including a laser cleaning tank, laser cleaning nozzles and cleaning conveying mechanisms; a first transfer system including second carrying conveying mechanisms and second transfer mechanisms; an aluminum thermal-spraying system including traveling mechanisms, turning mechanisms and an aluminum spraying mechanism, the traveling mechanisms being configured to convey workpieces on the second carrying conveying mechanisms onto the turning mechanisms one-by-one, the turning mechanisms being configured to turn the workpieces by a preset angle, and the aluminum spraying mechanism being configured to perform aluminum arc-spraying on the workpieces.

Abstract: A semiconductor device includes a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductive bump, a conductive cap over the conductive bump, and a passivation layer. The conductive pad is over the semiconductor substrate. The conductive bump is over the conductive pad, wherein the conductive bump has a stepped sidewall structure including a lower sidewall, an upper sidewall laterally offset from the lower sidewall, and an intermediary surface laterally extending from a bottom edge of the upper sidewall to a top edge of the lower sidewall. The conductive cap is over the conductive bump. The passivation layer is over the semiconductor substrate and laterally surrounds the conductive bump, wherein the passivation layer has a top surface higher than the intermediary surface of the stepped sidewall structure of the conductive bump and lower than a top surface of conductive cap.

Abstract: An electromagnetic wave absorption structure includes at least one electromagnetic wave composite absorbing layer. The electromagnetic wave composite absorbing layer includes a conductive composite layer and an insulating layer. The insulating layer is stacked and overlapped with the conductive composite layer. The electromagnetic wave absorption structure can provide good electromagnetic wave absorption function, and have the features of light and thin, so it is particularly suitable for satisfying the electromagnetic wave absorption or shielding requirements of thin electronic products.

Abstract: A timing controller is provided. A data enable signal in a timing control module is regenerated by a signal regenerating module. A number of vertical valid display rows is regenerated as a vertical valid display period. A total charge time of all rows of pixels in each frame can be increased effectively. A horizontal blanking period is changed sequentially in a row-by-row manner, thereby compensating charge effects of rows of pixels accurately.

Abstract: The present application provides a memory device having word lines with improved resistance, and a manufacturing method of the memory device. The memory device includes a semiconductor substrate defined with a peripheral region and an array region at least partially surrounded by the peripheral region, and including a first recess extending into the semiconductor substrate and disposed in the array region; an isolation structure surrounded by the semiconductor substrate and disposed in the peripheral region; and a word line disposed within the first recess, wherein the word line includes an insulating layer conformal to the first recess and a conductive member surrounded by the insulating layer, and the conductive member includes a second recess extending into the conductive member and toward the semiconductor substrate. A method of manufacturing the memory device is also disclosed.

Abstract: A touchpad module includes a base plate, a touch member, a supporting structure and a pressure sensing unit. The touch member is movable toward the base plate. The supporting structure is arranged between the base plate and the touch member. The pressure sensing unit is installed on the touch member. The pressure sensing unit is arranged between the touch member and the base plate. While the touch member is pressed in response to an external pressing force, the touch member is moved downwardly toward the base plate to compress the supporting structure. Consequently, the supporting structure is subjected to deformation, and the touch member has a displacement amount. According to the displacement amount, a magnitude of the pressing force is sensed by the pressure sensing unit, and a pressure sensing signal is outputted from the pressure sensing unit.