Abstract: An integrated circuit includes a feedthrough via structure includes a dummy transistor with a dummy gate metal. The dummy transistor is positioned between a first transistor and a second transistor. The dummy gate metal is a different material than the gate metal of the first and second transistors. The feedthrough via structure and electrically connects a backside metal line with a front side metal line. The first and second transistors are positioned between the front side of backside metal lines.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first conductive feature disposed between two substrate portions, a second conductive feature disposed over the first conductive feature, a third conductive feature disposed over the first conductive feature, and a fourth conductive feature disposed over the first conductive feature. The fourth conductive feature includes a top portion disposed over the second and third conductive features and a bottom portion disposed between the second and third conductive features, and the first, second, third, and fourth conductive features are electrically connected.

Abstract: A display device includes a backlight module and a display module. The backlight module includes a plurality of light emitting units, a base plate and at least one controller. The light emitting units are disposed on a first surface of the base plate, the controller is disposed on a second surface of the base plate, the second surface is opposite to the first surface, and at least one of the light emitting units is electrically connected to the controller. The display module is disposed on the first surface, and the light emitting units are disposed between the display module and the base plate. The backlight module includes a covering layer, an optical film, and a plurality of pins, the covering layer is disposed on the first surface of the base plate, and the pins are disposed between the covering layer and the optical film.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a first dopant having a first doping type. A deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type. An isolation structure is disposed within the semiconductor substrate. The isolation structure extends from the back-side surface of the semiconductor substrate to a point below the back-side surface. A doped liner is disposed between the isolation structure and the second doped region. The doped liner comprises the second dopant.

Abstract: A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.

Abstract: A semiconductor device comprises semiconductor layers extending over a substrate, a gate structure, gate spacers, epitaxial source/drain structures, a conductive contact and a lower dielectric plug. The gate structure wraps around the semiconductor layers. The gate spacers are on opposite sidewalls of the gate structure. The epitaxial source/drain structures are on opposite sides of the metal gate structure. The conductive contact is over a first one of the epitaxial source/drain structures. The lower dielectric plug is over a second one of epitaxial source/drain structures, wherein from a cross-sectional view, the gate spacers are between the lower dielectric plug and the conductive contact, wherein from a plan view, the lower dielectric plug and the conductive contact have a same pattern.

Abstract: The present disclosure provides a synthetic leather including a base layer, a first polyolefin layer and a second polyolefin layer. The first polyolefin layer is disposed on the base layer, and a Shore A hardness thereof is about 40A to about 70A. The second polyolefin layer is disposed on the first polyolefin layer, and a Shore A hardness thereof is about 75 to about 98.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.

Abstract: An automotive sensor includes a body and a connecting member. The body forms a workspace. The connecting member is inserted into the body and includes a primary end, and the primary end is arranged in the workspace and includes a holding portion. The automation of the assembly process can be realized, and then the effect of improving assembly efficiency and reducing labor cost can be achieved.

Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.

Abstract: A manufacturing method of a display device includes the following steps. A substrate is provided. The substrate has a pixel region, and a driving circuit is disposed on the pixel region. Light emitting elements are placed in a light emitting element mounting region of the pixel region. A force of an electric field between a first alignment electrode and a second alignment electrode is used to substantially align the light emitting elements in one direction and fix the light emitting elements in the light emitting element mounting region of the pixel region. An insulation layer is formed on the aligned light emitting elements to further fix the aligned light emitting elements in the light emitting element mounting region of the pixel region. The aligned light emitting elements are electrically connected to the driving circuit. The substrate carrying the aligned light emitting elements is cut into multiple sub-substrates.

Abstract: A display device, a display system, and a display and control method are provided. The display device includes a display module, a first multimedia interface, a second multimedia interface, and a controller. The controller receives first picture data of a first picture of a first electronic device via the first multimedia interface, and receives second picture data of a second picture of a second electronic device via the second multimedia interface. The controller determines a content of a display picture displayed by the display module according to the first picture data and the second picture data, and the controller determines whether an input device is used to control the first electronic device or the second electronic device according to a mouse position in the display picture.

Abstract: The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.

Abstract: A method for manufacturing a display device is provided. The method includes providing a driving module, disposing at least two light emitting units on the driving module and electrically connected to the driving module, providing a light conversion module, and disposing the light conversion module on the driving module. The light conversion module includes a first light conversion layer, a second light conversion layer, and a light blocking pattern disposed at a side of the first light conversion layer and the second light conversion layer, and an overlapping region of the first light conversion layer and the second light conversion layer is overlapped with the light blocking pattern in a top view direction.

Abstract: Using a same hardmask layer during formation of some isolation structures (e.g., shallower shallow trench isolation structures) and during formation of additional isolation structures (e.g., shallow trench isolation structures) results in the isolation structures being approximately level with a horizontal surface of a substrate in which the isolation structures are formed. That is, a step height of the isolation structures is reduced. Therefore, heights of portions of gates that extend over the isolation structures are increased. The increased heights of the gates result in increased landing areas for contacts, which helps prevent current leakage and thus improves performance of electronic devices that include the isolation structures.

Abstract: A sprayer head has a main body and an output head, wherein the main body comprises an output column with a water channel having a plurality of output aperture channels passing through the output column; the output column comprises a first threaded section and a control lever at a closed front end, and the control lever is jacketed with a first sealing ring. The output head has a connecting ring, a conic sleeve and a control member, the connecting ring being made of plastic and having a second threaded section for engaging with the first threaded section, and two opposing latches on an outer periphery; the conic sleeve is made of metal and has two opposing L-shaped rotatable slots on an outer periphery.

Abstract: A polymer structure and applications thereof are provided. The polymer structure includes a substrate and a light shielding layer covering at least a portion of the surface of the substrate, wherein the substrate includes a first polymer, the light shielding layer comprises a second polymer which includes a structural unit derived from a first ultraviolet absorber, the light shielding layer has a thickness of 1 ?m to 200 ?m, and the first ultraviolet absorber is a polyfunctional reactive ultraviolet absorber.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.