Abstract: An electronic device includes a substrate, a circuit layer, a first light emitting unit, a second light emitting unit, and a light conversion layer. The circuit layer is disposed on the substrate. The first and second light emitting units are disposed on the circuit layer and are respectively electrically connected to the circuit layer. The light conversion layer is disposed on the first and second light emitting units and includes a first light conversion unit overlapping the first light emitting unit and a second light conversion unit overlapping the second light emitting unit. The first and second light conversion units correspond to a first color. In a top view, an area of the first light emitting unit is smaller than an area of the second light emitting unit, and an area of the first light conversion unit is the same as an area of the second light conversion unit.

Abstract: An electronic device is provided. The electronic device includes a substrate, a driving layer, a semiconductor element, an insulating layer, a first conductive element and a second conductive element. The driving layer is disposed on the substrate and includes a transistor. The semiconductor element is disposed on the driving layer. The insulating layer is disposed between the driving layer and the semiconductor element. The first conductive element passes through the insulating layer to be electrically connected to the semiconductor element. The second conductive element passes through the insulating layer to be electrically connected to the semiconductor element. Moreover, the semiconductor element is electrically connected to the driving layer through the first conductive element and the second conductive element.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.

Abstract: A display device, a display system, and a display and control method are provided. The display device includes a display module, a first multimedia interface, a second multimedia interface, and a controller. The controller receives first picture data of a first picture of a first electronic device via the first multimedia interface, and receives second picture data of a second picture of a second electronic device via the second multimedia interface. The controller determines a content of a display picture displayed by the display module according to the first picture data and the second picture data, and the controller determines whether an input device is used to control the first electronic device or the second electronic device according to a mouse position in the display picture.

Abstract: A light emitting device includes a substrate, a plurality of light emitting parts disposed on the substrate, an organic layer disposed on at least one of the plurality of light emitting parts, a circuit layer disposed on the substrate, and a first layer disposed between the organic layer and the circuit layer.

Abstract: The present invention provides a spin-orbit torque magnetoresistive memory structure, which comprises a first conductive layer, a magnetic tunneling junction (MTJ) layer, a channel layer, and a second conductive layer stacked sequentially. The MTJ layer is disposed on the first conductive layer. The channel layer is disposed on the MTJ layer. The second conductive layer is disposed on the channel layer. These structures are fabricated sequentially using lithography. By forming the MTJ layer before the channel layer, redeposition of the metal of the channel layer on the MTJ layer can be avoided.

Abstract: A codebook generation method and an electronic apparatus are provided. The codebook generation method includes: collecting a plurality of pieces of electric field information of a plurality of antenna units in at least one millimeter-wave antenna module based on an initial codebook; correspondingly generating a full chain codebook (Full Chain Codebook) based on the electric field information; then, extendedly generating a sub chain codebook (Sub Chain Codebook) based on the full chain codebook; and finally generating, based on the full chain codebook and the sub chain codebook, an optimized codebook (Optimized Codebook) by using a power saving algorithm or a cumulative distribution function 50% gain loss algorithm. Therefore, the electronic apparatus using the optimized codebook is more excellent in power saving efficiency and overall efficiency performance.

Abstract: A light guide film comprises a base material layer, an upper ultraviolet adhesive layer, a lower ultraviolet adhesive layer, two optical adhesive layers and a light incident microstructure unit. The base material layer has a light incident surface. The upper ultraviolet adhesive layer is disposed above the base material layer. The lower ultraviolet adhesive layer is disposed below the base material layer. The two optical adhesive layers are disposed above the upper ultraviolet adhesive layer and below the lower ultraviolet adhesive layer, respectively. The light incident microstructure unit has a first microstructure region disposed on the light incident surface of the base material layer.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: A light emitting device includes a blue sub-pixel including a plurality of first light emitting units, a green sub-pixel including a plurality of second light emitting units and a first light converting element overlapped with the plurality of second light emitting units, and a red sub-pixel including a plurality of third light emitting units and a second light converting element overlapped with the plurality of third light emitting units. The plurality of first light emitting units are irregularly spaced in an area of the blue sub-pixel, the plurality of second light emitting units are irregularly spaced in an area of the green sub-pixel, and the plurality of third light emitting units are irregularly spaced in an area of the red sub-pixel.

Abstract: A semiconductor device package includes a carrier, an emitting element and a first package body. The carrier includes a first surface and a second surface opposite to the first surface. The emitting element is disposed on the first surface of the carrier. The first package body is disposed over the first surface of the carrier and spaced apart from the first surface of the carrier.

Abstract: The present disclosure provides a method for manufacturing a display device. The method includes providing a light emitting module, providing a driving module, providing a light conversion module, and assembling the light emitting module, the driving module, and the light conversion module to form a display assembly. The light emitting module is disposed between the light conversion module and the driving module.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a backplate, an insulating layer, and a diaphragm. The substrate has an opening portion. The backplate is disposed on a side of the substrate, with protrusions protruding toward the substrate. The diaphragm is movably disposed between the substrate and the backplate and spaced apart from the backplate by a spacing distance. The protrusions are configured to limit the deformation of the diaphragm when air flows through the opening portion.

Abstract: A display device includes a first display unit emitting a red light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak, and an intensity of the first peak is greater than the intensity of the sub peak.

Abstract: A semiconductor structure includes a source/drain (S/D) region, one or more dielectric layers over the S/D region, one or more semiconductor channel layers connected to the S/D region, an isolation structure under the S/D region and the one or more semiconductor channel layers, and a via under the S/D region and electrically connected to the S/D region. A lower portion of the via is surrounded by the isolation structure and an upper portion of the via extends vertically between the S/D region and the isolation structure.

Abstract: Embodiments of the present disclosure provide a semiconductor device with backside source/drain contacts formed using a buried source/drain feature and a semiconductor cap layer formed between the buried source/drain feature and a source/drain region. The buried source/drain feature and the semiconductor cap layer enable self-aligned backside source/drain contact and backside isolation. The semiconductor cap layer functions as an etch stop layer during backside contact formation while enabling source/drain region growth without fabrication penalty, such as voids in the source/drain regions.

Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a stack of semiconductor nanostructures over a base structure and a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. The semiconductor device structure also includes a gate stack wrapped around each of the semiconductor nanostructures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. The semiconductor device structure further includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor structure includes an isolation structure, a source/drain region over the isolation structure, a gate structure over the isolation structure and adjacent to the source/drain region, an interconnect layer over the source/drain region and the gate structure, an isolating layer below the gate structure, and a contact structure under the source/drain region. The contact structure has a first portion and a second portion. The first portion is below the second portion. The second portion extends through the isolating layer and protrudes above the isolating layer. A portion of the isolating layer is vertically between the gate structure and the first portion of the contact structure.