Abstract: Provided by the present disclosure is a power distribution box having a data interaction function, comprising a moving mechanism, a control mechanism and a data interaction mechanism. The moving mechanism comprises an electric valve and an electric telescopic rod. The control mechanism comprises a main control single-chip microcomputer and a control panel. The data interaction mechanism comprises a power distribution box tester and an output port. The electric valve is electrically connected to the main control single-chip microcomputer and is arranged at the bottom of the power distribution box. The control panel is arranged on a support rod and is electrically connected to the main control single-chip microcomputer. The power distribution box tester is electrically connected to the main control single-chip microcomputer and is arranged in the power distribution box, and the power distribution box tester is used for testing electrical devices of the power distribution box.

Abstract: A method for manufacturing bamboo plastic composite material having steps of cutting multiple bamboo stalks into multiple bamboo pieces and grinding the bamboo pieces to form multiple bamboo powders; cleaning the bamboo powders; drying the bamboo powers; modifying the bamboo powders; mixing multiple raw materials to form a bamboo plastic composite material with a composition of PVC 10 to 20 wt %; vinyl chloride/vinyl acetate (VC/VAC) copolymer 10 to 30 wt %; styrene-acrylonitrile copolymer (SAN) 1 to 5 wt %; chlorinated polyethylene (CPE) 1 to 5 wt %; the bamboo powders 10 to 40 wt %; inorganic filler 10 to 40 wt %; internal lubricant 0.1 to 1 wt %; external lubricant 0.1 to 1 wt %; and heat stabilizer 1 to 5 wt %; and forming and molding the bamboo plastic composite material.

Abstract: To arrange a power unit, an electric power conversion unit, and engine-related components compactly, a drive motor, a reduction drive, a generator, and an engine body are integrally arranged in this order in a vehicle width direction of a power unit compartment such that respective heights thereof are substantially the same. An electric power conversion unit, in which a motor inverter, an electric power generation inverter, and a DC/DC converter are integrated, is arranged above the drive motor, the reduction drive, and the generator. Engine-related components such as a low-voltage battery, an air cleaner, and an oil filter are arranged above the engine body.

Abstract: A network device includes one or more circuit components. The one or more circuit components include a semiconductor substrate, a first device terminal and a second device terminal, a drift region, and a mobility modulator. Both device terminals are coupled to the semiconductor substrate, the second device terminal being spatially separated from the first device terminal. The drift region is disposed on the semiconductor substrate between the first device terminal and the second device terminal, the drift region being configured to allow a flow of charge-carriers between the first device terminal and the second device terminal. The mobility modulator is coupled to the drift region, the mobility modulator being configured to selectively apply a field across the drift region responsive to one or more modulation signals, so as to modulate a mobility of charge-carriers as a function of longitudinal position along the drift region.

Abstract: In some embodiments, the present application provides an integrated chip (IC). The IC includes a metal-insulator-metal (MIM) device disposed over a substrate. The MIM device includes a plurality of conductive plates that are spaced from one another. The MIM device further includes a first conductive plug structure that is electrically coupled to a first conductive plate and to a third conductive plate of the plurality of conductive plates. A first plurality of insulative segments electrically isolate a second conductive plate and a fourth conductive plate from the first conductive plug structure. The MIM device further includes a second conductive plug structure that is electrically coupled to the second conductive plate and to the fourth conductive plate of the plurality of conductive plates. A second plurality of insulative segments electrically isolate the first conductive plate and the third conductive plate from the second conductive plug structure.

Abstract: An electronic assembly is provided. The electronic assembly includes a first circuit structure including a conductive structure, a second circuit structure disposed on the first circuit structure, a plurality of electronic elements disposed on the first circuit structure, and a connecting element disposed on the first circuit layer. The connecting element is disposed between two adjacent ones of the plurality electronic elements and electrically connected to the second circuit layer and one of the two adjacent ones of the plurality of electronic elements.

Abstract: A method of decoding video data performed by an electronic device is provided. The method receives the video data and determines a block unit from a current frame included in the video data. The method determines an extrapolation merge list of the block unit. The extrapolation merge list includes multiple extrapolation merge candidates. The method selects an extrapolation reference candidate from the extrapolation merge candidates for the block unit. Each of the extrapolation merge candidates includes multiple previous extrapolation parameters used to reconstruct a corresponding one of multiple extrapolation-reconstructed blocks. The extrapolation reference candidate is one of the extrapolation merge candidates. The method then determines an extrapolation prediction filter of the block unit based on the extrapolation reference candidate, and reconstructs the block unit based on the extrapolation prediction filter.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: An electronic device and an image processing method thereof are provided. The image processing method includes the following steps: detecting whether a buffer has second image data when performing a first compositing operation of first image data; detecting whether an image capturing operation of third image data is performed; judging a first time point for obtaining the third image data; and comparing a second time point for completing the first compositing operation to the first time point and determining whether to perform a second compositing operation of the second image data first or a third compositing operation of the third image data first.

Abstract: A method of overvoltage protection and an overvoltage protection device are provided. The method includes: electrically connecting an input terminal of a one-way pass circuit to a first equipment and electrically connecting an output terminal of the one-way pass circuit to a second equipment; electrically connecting a converter to the output terminal and a supercapacitor; detecting a first voltage of a first power flow at the output terminal by the converter; and charging the supercapacitor by the first power flow in response to the first voltage being greater than a first threshold.

Abstract: An electronic device including a flexible substrate, a plurality of electronic components, and a first driving unit is provided. The flexible substrate includes a surface having a first region and a second region. The first region has a Gaussian curvature of 0 and the second region has a non-zero Gaussian curvature. The plurality of electronic components are disposed on the flexible substrate. The first driving unit is disposed on the first region of the flexible substrate. One of the plurality of electronic components located on the second region of the flexible substrate is driven by the first driving unit.

Abstract: A method of power control can include receiving at a UE a first downlink reference signal from a repeater and a second downlink reference signal from a base station, the first downlink reference signal corresponding to a first path that is between the UE and the base station and passes the repeater, the second downlink reference signal corresponding to a second path that is between the UE and the base station. The UE estimates a first uplink path loss of the first path and a second uplink path loss of the second path and determine a first uplink transmit power corresponding to the first path and a second uplink transmit power corresponding to the second path. The UE performs an uplink transmission on the first path based on the first uplink transmit power and on the second path based on the second uplink transmit power.

Abstract: A thermoplastic polyurethane precursor that can be used to prepare a polyurethane having a low initial yellowness index, high yellowing resistance, high thermal oxidative aging resistance, high hydrolysis resistance, and low fisheye.

Abstract: An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a first ESD protection unit in a P-type semiconductor substrate to protect a first circuit. The first ESD protection unit includes first and second N-type and P-type well regions. The first N-type and P-type doped regions are in the first N-type well region. The second N-type and P-type doped regions are in the first P-type and second N-type well regions. The third N-type and P-type doped regions are in the second P-type well region. The first P-type and the third N-type doped regions are electrically connected to a common bus electrically connected to power supply and ground terminals of the first circuit. The first N-type and the second P-type doped regions are electrically connected to the power supply terminal. The second N-type and the third P-type doped regions are electrically connected to the ground terminal.

Abstract: A light sensing method having a sensing order adjusting mechanism is provided. The method includes steps of: in a previous sensing cycle, sensing a first light signal that is emitted by both of an ambient light source and a light-emitting component and then is reflected by a tested object; in the previous sensing cycle, sensing a second light signal that is emitted by both of the ambient light source and the light-emitting component and then is reflected by the tested object; in the previous sensing cycle, sensing an ambient light signal emitted by only the ambient light source; and in a next sensing cycle, sensing the first light signal, the second light signal and the ambient light signal in an order different from that in the previous sensing cycle.

Abstract: Low-flow tungsten chemical vapor deposition (CVD) techniques described herein provide substantially uniform deposition of tungsten on a semiconductor substrate. In some implementations, a flow of a processing vapor is provided to a CVD processing chamber such that a flow rate of tungsten hexafluoride in the processing vapor results in the tungsten layer being grown at a slower rate than a higher flow rate of the tungsten hexafluoride to promote substantially uniform growth of the tungsten layer. In this way, the low-flow tungsten CVD techniques may be used to achieve similar surface uniformity performance to an atomic layer deposition (ALD) while being a faster deposition process relative to ALD (e.g., due to the lower deposition rate and large quantity of alternating processing cycles of ALD). This reduces the likelihood of defect formation in the tungsten layer while increasing the throughput of semiconductor device processing for the semiconductor substrate (and other semiconductor substrates).

Abstract: This disclosure relates to verifying possession of a card via a tap gesture of the card in relation to a mobile device supporting Near-Field Communication (NFC) functionality.

Abstract: A semiconductor device and a method of manufacturing thereof are provided. The method comprises: forming a gate electrode over a substrate; forming source/drain regions beside the gate electrode; forming contact plugs on the source/drain regions; forming a dielectric layer over the contact plugs and the gate electrode; forming first openings and a second opening in the dielectric layer to expose portions of the contact plugs and a portion of the gate electrode respectively; performing a pre-clean process such as applying an ozone-containing source to the exposed portions of the contact plugs and the gate electrode; performing a surface treatment to the first and second openings to passivate sidewalls of the first and second openings; forming a conductive layer to fill the first openings and the second opening in a same deposition process by using a same metal precursor; and performing a planarization process.

Abstract: A lens assembly includes a first lens, a second lens, and a third lens. The first lens is a meniscus lens with positive refractive power and includes a convex surface facing an object side and a concave surface facing an image side. The second lens is with positive refractive power and includes a convex surface facing the image side. The third lens is with refractive power and includes a concave surface facing the image side. The first lens, the second lens, and the third lens are arranged in order from the object side to the image side along an optical axis.

Abstract: An electronic device includes a substrate, a first mesh structure, a second mesh structure and a sub-pixel. The first mesh structure is disposed on the substrate and has a plurality of first openings. The second mesh structure is disposed adjacent to the first mesh structure and has a plurality of second openings. The sub-pixel overlaps one of the plurality of first openings in a top-view direction. In the top-view direction, the first mesh structure and the second mesh structure are separated by a minimum distance along a first direction, and the minimum distance is less than a maximum width of the sub-pixel along the first direction.